公开(公告)号：WO1998000856A1

公开(公告)日：1998-01-08

申请号：PCT/US1996018032

申请日：1996-11-12

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  LI, Xaonan ,  SHELDON, Peter

IPC: H01L21/20

CPC classification number: H01L31/073 ,  H01L21/02474 ,  H01L21/02562 ,  H01L21/02595 ,  H01L21/02631 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Abstract translation: 一种在衬底上沉积半导体材料的方法。 该方法顺序地包括（a）提供诸如蒸气的沉积状态的半导体材料以沉积在基底上; （b）将半导体材料沉积在衬底上，同时将衬底加热到​​足以使半导体材料形成具有第一晶粒尺寸的第一膜层的第一温度; （c）在将衬底冷却至足以使半导体材料形成沉积在第一膜层上并具有小于第一晶粒尺寸的第二晶粒尺寸的第二膜层的第二温度下，将半导体材料连续沉积在衬底上; 和（d）提高衬底温度，同时继续或不继续沉积半导体材料以形成第三膜层，从而将膜层退火成在光伏应用中具有良好效率特性的单层。 优选的半导体材料是沉积在已经具有硫化镉层的玻璃/氧化锡衬底上的碲化镉。

公开(公告)号：WO1997022637A1

公开(公告)日：1997-06-26

申请号：PCT/US1996020452

申请日：1996-12-13

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  PERN, Fu-Jann

IPC: C08F18/08

CPC classification number: C08K5/005 ,  B32B17/10788 ,  H01L31/0481 ,  Y02E10/50 ,  C08L23/08

Abstract: A substantially clear and substantially colorless encapsulating material for protectively encapsulating an operating photovoltaic device while substantially retaining light transmittal properties necessary for efficient device operation. The encapsulating material is substantially free of an ultraviolet light absorber component and comprises a polymer component and a curing agent component. Additional additives can include a primer component, an ultraviolet-light stabilizer component and an antioxidant component.

Abstract translation: 一种基本上透明且基本上无色的封装材料，用于保护性地封装工作光伏器件，同时基本上保持有效器件操作所需的光透射特性。 封装材料基本上不含紫外光吸收剂组分，并且包含聚合物组分和固化剂组分。 另外的添加剂可以包括底漆组分，紫外光稳定剂组分和抗氧化组分。

公开(公告)号：WO1997012082A1

公开(公告)日：1997-04-03

申请号：PCT/US1996015267

申请日：1996-09-24

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  PEHNT, Martin ,  SCHULZ, Douglas, L. ,  CURTIS, Calvin, J. ,  GINLEY, David, S.

IPC: C30B01/02

CPC classification number: B82Y30/00 ,  C01B17/20 ,  C01B19/007 ,  C01P2002/01 ,  C01P2002/02 ,  C01P2004/64 ,  C01P2006/22 ,  C03C17/22 ,  C03C2217/287 ,  C03C2218/113 ,  C30B5/00 ,  C30B29/46 ,  C30B29/48 ,  H01L21/02422 ,  H01L21/02562 ,  H01L21/02601 ,  H01L21/02628

Abstract: A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Abstract translation: 一种制备半导体膜的方法。 该方法包括将半导体材料的纳米颗粒沉积在其上的纳米颗粒沉积期间的表面温度足以引起纳米颗粒的基本上同时的融合从而使其彼此聚结并实现膜生长的基底上。

公开(公告)号：WO1995019641A1

公开(公告)日：1995-07-20

申请号：PCT/US1995000722

申请日：1995-01-18

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  SOPORI, Bhushan, L.

IPC: H01L21/28

CPC classification number: H01L21/28518 ,  H01L31/02325

Abstract: A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device (4). The contact is formed by coating the semiconductor substrate (1) with a thin metal film (2) on the back reflecting side (10) and then optically processing the wafer by illuminating it with electromagnetic radiation (7) of a predetermined wavelength and energy level through the front side (9) of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance.

Abstract translation: 提供了一种制造在半导体器件（4）的一侧上具有高光学反射率的低电阻率欧姆接触的方法。 接触是通过在背反射面（10）上用薄金属膜（2）涂覆半导体衬底（1）而形成的，然后通过用预定波长和能级的电磁辐射（7）照射晶片来光学处理晶片 通过晶片的前侧（9）预定的时间。 当使用晶体衬底时，该方法在半导体衬底和金属层之间产生薄的外延合金层。 合金层提供低电阻率欧姆接触和高光学反射率。

公开(公告)号：WO1995001646A1

公开(公告)日：1995-01-12

申请号：PCT/US1994007477

申请日：1994-07-01

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  KAZMERSKI, Lawrence, L.

IPC: H01J37/26

CPC classification number: B82B3/00 ,  G01Q80/00 ,  Y10S977/856

Abstract: A method for selecting and removing single specific atoms from a solid material surface (50) uses photon biasing to break down bonds that hold the selected atom in the lattice and to reduce barrier effects that hold the atom from transferring to a probe (14). The photon bias is preferably light (58) or other electromagnetic radiation with a wavelength and frequency that approximately matches the wave function of the target atom species to be removed to induce high energy, selective thermionic-like vibration. An electric field potential is then applied between the probe (14) and the surface (50) of the solid material to pull the atom out of the lattice and to transfer the atom to the probe (14). Different extrinsic atoms can be installed in the lattice sites that are vacated by the removed atoms by using a photon bias that resonates the extrinsic atom species, reversing polarity of the electric field, and blowing gas comprising the extrinsic atoms through a hollow catheter probe.

Abstract translation: 用于从固体材料表面（50）中选择和去除单个特定原子的方法使用光子偏压来分解将所选择的原子保持在晶格中的键，并减少将原子转移到探针（14）的阻挡效应。 光子偏压优选是光（58）或具有近似匹配待除去的目标原子物质的波函数的波长和频率的其他电磁辐射，以引起高能量，选择性的热离子样振动。 然后在探针（14）和固体材料的表面（50）之间施加电场电位，以将原子拉出晶格并将原子转移到探针（14）。 可以通过使用谐振外来原子物质的光子偏置，反转电场的极性，以及通过中空导管探针吹送包含外源原子的气体，将不同的外在原子安装在被去除的原子腾出的晶格位置。

公开(公告)号：WO1994024696A1

公开(公告)日：1994-10-27

申请号：PCT/US1994003827

申请日：1994-04-07

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  TUTTLE, John, R. ,  CONTRERAS, Miguel, A. ,  NOUFI, Rommel ,  ALBIN, David, S.

IPC: H01L21/302

CPC classification number: H01L31/0322 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93

Abstract: Enhanced quality thin films of Cuw(In,Gay)Sez for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):CuxSe on a substrate (12) to form a large-grain precursor (20) and then converting the excess CuxSe(18) to Cu(In,Ga)Se2 by exposing it to an activity of In (22) and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)ySez. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor (20). The conversion process is preferably performed in the temperature range of about 300-600 DEG C, where the Cu(InGa)Se2 (16) remains solid, while the excess CuxSe (18) is in a liquid flux. The characteristic of the resulting Cuw(In,Ga)ySez can be controlled by the temperature. Higher temperatures, such as 500-600 DEG C, results in a nearly stoichiometric Cu(In,Ga)Se2, whereas lower temperatures, such as 300-400 DEG C, results in a more Cu-poor compound, such as the Cu2(In,GA)4Se7 phase.

Abstract translation: 通过在衬底（12）上最初形成包含Cu（In，Ga）：CuxSe的富Cu相分离的化合物混合物来制造用于半导体器件应用的Cuw（In，Gay）Sez的增强质量薄膜，以形成大的 （20），然后通过将其过量的In（22）和/或Ga的活性暴露于In（22）和/或Ga的蒸气In和/或Ga形式中，或将其过量的CuxSe（18）转化为Cu（In，Ga）Se2 固体（In，Ga）ySez。 或者，可以通过将In和/或Ga和Se顺序沉积到相分离的前体（20）上进行转化。 转化过程优选在约300-600℃的温度范围内进行，其中Cu（InGa）Se2（16）保持固体，而过量的CuxSe（18）处于液体通量。 所得Cuw（In，Ga）ySez的特征可以由温度控制。 较高的温度（如500-600℃）导致几乎具有化学计量的Cu（In，Ga）Se2，而较低的温度（如300-400℃）会导致更多的Cu不良化合物，如Cu2 In，GA）4Se7相。

公开(公告)号：WO1994011778A1

公开(公告)日：1994-05-26

申请号：PCT/US1993010634

申请日：1993-11-05

Applicant: MIDWEST RESEARCH INSTITUTE

Inventor： MIDWEST RESEARCH INSTITUTE ,  BENSON, David, K. ,  CRANDALL, Richard, S. ,  DEB, Satyendra, K. ,  STONE, Jack, L.

IPC: G02F01/153

CPC classification number: E06B3/6722 ,  G02F1/153

Abstract: A variable transmittance double pane window includes an electrochromic material (16) that has been deposited on one pane of the window (12) in conjunction with an array of photovoltaic cells (60) deposited along an edge of the pane to produce the required electric power necessary to vary the effective transmittance of the window. A battery is placed in a parallel fashion to the array of photovoltaic cells to allow the user the ability to manually override the system when a transmittance is desired.

Abstract translation: 可变透光率双窗格窗口包括已经沉积在窗口（12）的一个窗格上的电致变色材料（16），其结合沿着窗格的边缘沉积的光伏电池阵列（60）以产生所需的电力 必须改变窗口的有效透射率。 将电池以与光伏电池阵列平行的方式放置，以允许使用者在需要透射率时手动覆盖系统的能力。

公开(公告)号：WO1994006156A1

公开(公告)日：1994-03-17

申请号：PCT/US1993008310

申请日：1993-09-02

Applicant: MIDWEST RESEARCH INSTITUTE ,  WANLASS, Mark, W.

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: H01L27/14

CPC classification number: H01L31/0687 ,  H01L33/0016 ,  Y02E10/544

Abstract: A single-crystal, monolithic, tandem, multicolor optical transceiver device (100) is described, including (a) an InP substrate (102) having upper and lower surfaces, (b) a first junction (104) on the upper surface of the InP substrate, (c) a second junction (106) on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions (108) having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multicolor emission and detection over a single optical fiber.

Abstract translation: 描述了单晶，单片，串联，多色光收发器装置（100），其包括（a）具有上表面和下表面的InP衬底（102），（b）在所述第一结（104）的上表面上 InP衬底，（c）第一结上的第二结（106）。 第一结优选为具有限定组成的GaInAsP，第二结优选为InP。 两个结点是格子匹配的。 第二接头具有比第一接头更大的能带隙。 可以包括具有连续较大能带隙的附加结（108）。 该器件能够通过单根光纤同时且独特的多色发射和检测。

公开(公告)号：WO1994000559A1

公开(公告)日：1994-01-06

申请号：PCT/US1993006023

申请日：1993-06-23

Applicant: MIDWEST RESEARCH INSTITUTE ,  WEAVER, Paul, F. ,  MANESS, Pin-Ching

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: C12N01/38

CPC classification number: C12R1/01 ,  C12N1/20 ,  Y10S435/801 ,  Y10S435/822

Abstract: A process is described for converting organic materials (such as biomass wastes) into a bioplastic suitable for use as a biodegradable plastic. In a preferred embodiment the process involves thermally gasifying the organic material into primarily carbon monoxide and hydrogen, followed by photosynthetic bacterial assimilation of the gases into cell material. The process is ideally suited for waste recycling and for production of useful biodegradable plastic polymer.

Abstract translation: 描述了将有机材料（例如生物质废物）转化为适合用作可生物降解塑料的生物塑料的方法。 在优选的实施方案中，该方法包括将有机材料热气化为主要的一氧化碳和氢气，然后将气体的光合细菌同化为细胞材料。 该方法非常适用于废物回收和生产有用的可生物降解的塑料聚合物。

公开(公告)号：WO1992022528A2

公开(公告)日：1992-12-23

申请号：PCT/US1992004601

申请日：1992-06-01

Applicant: MIDWEST RESEARCH INSTITUTE ,  CHUM, Helena, L. ,  EVANS, Robert, J.

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: C07D202/02

CPC classification number: C10G1/086 ,  C10G1/02 ,  C10G1/10

Abstract: A process of using fast pyrolysis in a carrier gas to convert a plastic waste feedstream having a mixed polymeric composition in a manner such that pyrolysis of a given polymer to its high value monomeric constituent occurs prior to pyrolysis of other plastic components therein comprising: selecting a first temperature program range to cause pyrolysis of said given polymer to its high value monomeric constituent prior to a temperature range that causes pyrolysis of other plastic components; selecting a catalyst and support for treating said feed streams with said catalyst to effect acid or base catalyzed reaction pathways to maximize yield or enhance separation of said high value monomeric constituent in said temperature program range; differentially heating said feed stream at a heat rate within the first temperature program range to provide differential pyrolysis for selective recovery of optimum quantities of the high value monomeric constituents prior to pyrolysis of other plastic components; separating the high value monomeric constituents; selecting a second higher temperature range to cause pyrolysis of a different high value monomeric constituent of said plastic waste and differentially heating the feedstream at the higher temperature program range to cause pyrolysis of the different high value monomeric constituent; and separating the different high value monomeric constituent.