Abstract:
A fiber-optic device (10) for sensing the presence of a gas in an environment is provided. The device (10) comprises a light source (14) for directing a light beam (36) to a layer system having a first surface (46) and a second surface (54) opposite to the first surface. The first surface (46) is exposable to the light beam (36) and the second surface is exposable to the environment. A first light portion (50) encounters and reflects from the first surface (46) at an angle of incidence free from optical wave guide resonance phenomenon and the second light portion (52) encounters and reflects from the first surface (46) at an angle of incidence enabling an optical wave guide resonance phenomenon. The layer system is selected to reversibly react with the gas to be detected. The reaction between the gas and the material changes the material's optical properties and the wavelength at which the optical wave guide resonance occurs. Furthermore, a mechanism (24, 26, 28) for measuring the intensity of the reflected first light portion (50) relative to the reflected second light portion (52) is provided with the ratio of the first and second light portions indicating the concentration of the gas presence in the environment.
Abstract:
A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) CuxSen, wherein x = 1-2 and n = 1-3; (2) CuxGaySen, wherein x = 1-2; y = 0-1 and n = 1-3; (3) CuxInySen, wherein x = 1-2, y = 1-2 and n = 1-3; (4) Cux(InGa)ySen, wherein x = 1-2, y = 1-2 and n = 1-3; (5) InySen, wherein y = 1-2 and n = 1-3; (6) CuxSn, wherein x = 1-2 and n = 1-3; and (7) Cux(InGa)y(SeS)n, wherein x = 1-2; y = 1-2 and n = 1-3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium-containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes.
Abstract:
An improved process for converting lignocellulosic biomass-to-ethanol comprising: providing a biomass material selected from the group consisting of unmodified carbohydrate material, chemically modified carbohydrate material, derivatized carbohydrate material and mixtures thereof; treating said material enzymatically, chemically, physically or mechanically to produce a glucose containing fluid; treating the glucose containing fluid in a fermenter with a fermentative microorganism at temperatures between about 20 DEG C to about 50 DEG C and at pH ranges from about 3.0 to about 7.0; separating cell mass from said material and solutions surrounding said cell mass from said materials and recycling the cell mass and solutions surrounding the cell mass back to the fermenter to provide a source of nutrients for the fermentative organism; extracting ethanol from the fermentation broth with distillation or an extracting solvent or with membranes; and evaporating the ethanol from the fermentation broth.
Abstract:
Apparatus for detecting and mapping defects in the surfaces of polycrystalline materials to distinguish dislocation pits from grain boundaries includes a laser (16) for illuminating a wide spot on the surface (20) of the material (14), a light integrating sphere (22) with apertures (24, 26) for capturing light scattered by etched dislocation pits in an intermediate range away from specular reflection while allowing light scattered by etched grain boundaries in a near range from specular reflection to pass through, and optical detection devices (40, 50) for detecting and measuring intensities of the respective intermediate scattered light and near specular scattered light. A center blocking aperture (44) or filter can be used to screen out specular reflected light, which would be reflected by nondefect portions of the polycrystalline material surface. An X-Y translation stage (12) for mounting the polycrystalline material and signal processing and computer equipment accommodate raster mapping, recording, and displaying of respective dislocation and grain boundary defect densities.
Abstract:
A chemical vapor deposition method for depositing transparent continuous coatings of sp -bonded diamond carbon films, comprising: a) providing a volatile hydrocarbon gas/H2 reactant mixture in a cold wall vacuum chemical vapor deposition chamber (13) containing a substrate (14) for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux (15) of from about 40 to about 60 watts/cm through said reactant mixture to produce substrate temperatures of about 750 DEG C to about 950 DEG C to activate deposition of the film on said substrate (14).
Abstract translation:一种用于沉积sp 3结合金刚石碳膜的透明连续涂层的化学气相沉积方法,包括:a)在含有底物的冷壁真空化学气相沉积室(13)中提供挥发性烃气/ H 2反应物混合物 14),在约1至50托的压力下; 和b)通过所述反应物混合物引导约40至约60瓦特/平方厘米的浓缩太阳能通量(15)以产生约750℃至约950℃的基板温度,以激活所述薄膜在所述 衬底(14)。
Abstract:
A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga0.52In0.48P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7 %. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.
Abstract translation:一种高效率异质结太阳能电池,其中薄的发射极层(优选Ga 0.52 In 0.48 P)与GaAs吸收层形成异质结。 具有限定组成的钝化窗口层设置在发射极层上。 太阳能电池的转换效率至少为25.7%。 太阳能电池优选地包括在基板和吸收体层之间的钝化层。 防反射涂层优选设置在窗口层上。
Abstract:
Disclosed is a hydrogen ion microlithography process for use in microelectronic fabrication and semiconductor device processing. The process comprises the steps of providing a single layer (14) of either an amorphous silicon or hydrogenated amorphous silicon material. A pattern is recorded in a selected layer (14) of amorphous silicon or hydrogenated amorphous silicon material by preferentially implanting hydrogen ions (18) therein so as to permit the selected layer to serve as a mask-resist wafer suitable for subsequent development and device fabrication. The layer is developed to provide a surface pattern therein adaptable for subsequent use in microelectronic fabrication and semiconductor device processing.
Abstract:
A substantially stable colloidal suspension comprising a plurality of semiconductor nanoparticles each capped with a volatile capping agent, and the preparation thereof. A colloidal suspension so defined can be employed as a source of substantially carbon-free semiconductor nanoparticles for semiconductor film growth. Preparation of the colloidal suspension comprises providing two salts reactable with each other to produce a semiconductor and reacting these two salts to produce semiconductor nanoparticles. Introduction of the volatile capping agent can occur either during nanoparticle synthesis or after nanoparticle synthesis by appropriate exposure to and treatment of the nanoparticles by the volatile capping agent. The resulting nanoparticle precipitate is mixed with volatile capping agent to produce a mixture which is subjected to sonication and centrifugation for a time sufficient to produce a concentrated colloidal suspension thereafter diluted for subsequent deposition in the formation of a semiconductor film.
Abstract:
A recombinant Lactobacillus MONT4 is provided which has been genetically engineered with xylose isomerase and xylulokinase genes from Lactobacillus pentosus to impart to the Lactobacillus MONT4 the ability to ferment lignocellulosic biomass containining xylose to lactic acid.
Abstract:
A process for the preparation of a precursor metallic powder composition for use in the subsequent formation of a superconductor. The process comprises the steps of providing an electrodeposition bath comprising an electrolyte medium and a cathode substrate electrode, and providing to the bath one or more soluble salts of one or more respective metals which are capable of exhibiting superconductor properties upon subsequent appropriate treatment. The bath is continually energized to cause the metallic and/or reduced particles formed at the electrode to drop as a powder from the electrode into the bath, and this powder, which is a precursor powder for superconductor production, is recovered from the bath for subsequent treatment. The process permits direct inclusion of all metals in the preparation of the precursor powder, and yields an amorphous product mixed on an atomic scale to thereby impart inherent high reactivity. Superconductors which can be formed from the precursor powder include pellet and powder-in-tube products.