公开(公告)号：US10283929B2

公开(公告)日：2019-05-07

申请号：US15325094

申请日：2015-06-16

Applicant: OSRAM OPTO Semiconductors GmbH

Inventor： Hubert Halbritter ,  Mario Wiengarten

IPC: H01S5/00 ,  H01S5/022 ,  H04N3/02 ,  H04N13/254

Abstract: Various embodiments may relate to a semiconductor laser device, including at least one laser diode, and at least one reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and an additional light-nontransmissive housing body having a cutout. The laser diode is the sole light source of the semiconductor laser device. The laser diode is mounted immovably relative to the at least one reflection surface. Light emitted by the semiconductor laser device during operation has the same spectral components as, or fewer spectral components than, light emitted by the laser diode. An interspace between the laser diode and the at least one reflection surface is free of an optical assembly. A light-emitting area of the semiconductor laser device is greater than a light-emitting area of the laser diode by at least a factor of 100.

公开(公告)号：US10033158B1

公开(公告)日：2018-07-24

申请号：US15845983

申请日：2017-12-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Hubert Halbritter ,  Martin Rudolf Behringer

IPC: H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/18 ,  H01S5/40 ,  H01S5/02 ,  H01S5/022

Abstract: A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first Bragg mirror and a second Bragg mirror so that the second Bragg mirror is further away from the carrier than the first Bragg mirror; a semiconductor layer sequence between the first and the second Bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first Bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.

公开(公告)号：US20170325729A1

公开(公告)日：2017-11-16

申请号：US15526495

申请日：2015-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Michael Klein ,  David O'Brien

IPC: A61B5/1455 ,  A61B5/00

CPC classification number: A61B5/14552 ,  A61B5/7214 ,  A61B2562/0238

Abstract: A pulse oximetry device includes a light emission device configured to emit light with a wavelength in a first wavelength interval and light with a wavelength in a second wavelength interval, a first light detector configured to detect light with a wavelength in the first wavelength interval, but not to respond to light with a wavelength in the second wavelength interval, and a second light detector configured to detect light with a wavelength in the first wavelength interval and detect light with a wavelength in the second wavelength interval, wherein the first light detector has a first light reception surface, the second light detector has a second light reception surface, and the first light reception surface and the second light reception surface are arranged in a common plane and are interleaved with one another.

公开(公告)号：US09606231B2

公开(公告)日：2017-03-28

申请号：US14423429

申请日：2013-08-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter

IPC: H01J40/14 ,  G01S17/08 ,  H01L31/167 ,  H03K17/94 ,  H01L31/0203 ,  H01L31/0232 ,  G01S17/02 ,  G01S7/481 ,  G02B5/10 ,  H01L25/16

CPC classification number: G01S17/08 ,  G01S7/481 ,  G01S7/4813 ,  G01S17/026 ,  G02B5/10 ,  H01L25/167 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/167 ,  H01L2224/48091 ,  H03K17/941 ,  H03K2217/94108 ,  H01L2924/00014

Abstract: The invention relates to an optoelectronic device (1) comprising a detector for receiving radiation and a frame (3). Said frame is provided with an opening (30), in which the detector is located. The frame extends vertically between a radiation penetration face (300) and a rear face (301). The opening has a lateral face (4) running obliquely to the vertical direction. The oblique lateral face from the top view of the radiation penetration face has a first sub-section (41) and a second sub-section (42). The first sub-section is designed as a reflector for the radiation that is to be received by the detector and the second sub-section guides radiation that is incident on the second sub-section in the vertical direction away from the detector.

公开(公告)号：US20160149090A1

公开(公告)日：2016-05-26

申请号：US14900155

申请日：2014-06-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Hubert Halbritter

IPC: H01L33/50 ,  H01L25/16

CPC classification number: H01L33/502 ,  C09K11/7774 ,  H01L25/167 ,  H01L33/505 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A radiation-emitting optoelectronic device is provided. The radiation-emitting optoelectronic device includes a semiconductor chip that, when the device is in operation, emits primary radiation of a wavelength of between 600 nm and 1000 nm. A conversion element includes a conversion material comprising ions of one or more metals selected from a group comprising La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cr, Pb and Mg. The conversion material converts the primary radiation emitted by the semiconductor chip virtually completely into secondary radiation of a wavelength of between 1000 nm and 6000 nm.

Abstract translation: 提供了一种发射光电子器件。 辐射发射光电子器件包括半导体芯片，其在器件工作时发射波长在600nm和1000nm之间的初级辐射。 转换元件包括转化材料，其包含选自La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Cr，Pb中的一种或多种金属的离子 和镁。 转换材料将半导体芯片发射的初级辐射实际上完全转换为1000nm至6000nm波长的二次辐射。

公开(公告)号：US20150177366A1

公开(公告)日：2015-06-25

申请号：US14405750

申请日：2013-04-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter

IPC: G01S7/481 ,  G01S17/08

CPC classification number: G01S7/4813 ,  G01S17/026 ,  G01S17/08 ,  H01L31/173 ,  H03K17/941 ,  H03K17/9631 ,  H03K2217/94108

Abstract: An optoelectronic device has a first component provided to generate radiation, a second component provided to receive radiation, a connection board and a frame. The first component and the second component are arranged on the connection board. The frame is arranged on the connection board. The first component is arranged in a first opening in the frame. The second component is arranged in a second opening in the frame. The first opening and the second opening extend from a main face of the frame opposite the connection board in the direction of the connection board. The main face between the first opening and the second opening has an intermediate region, in which a reflection of radiation incident on the main face is reduced.

Abstract translation: 光电器件具有提供用于产生辐射的第一部件，设置成接收辐射的第二部件，连接板和框架。 第一部件和第二部件布置在连接板上。 框架布置在连接板上。 第一部件布置在框架中的第一开口中。 第二部件布置在框架中的第二开口中。 第一开口和第二开口从连接板的与连接板相对的框架的主面沿着连接板的方向延伸。 第一开口和第二开口之间的主面具有中间区域，其中入射在主面上的辐射的反射减小。

公开(公告)号：US12247922B2

公开(公告)日：2025-03-11

申请号：US17758549

申请日：2020-12-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ann Russell ,  Hubert Halbritter ,  Christoph Goeltner

IPC: G01N21/65

Abstract: In an embodiment an apparatus includes at least one optoelectronic laser configured to provide excitation radiation to a sample, the excitation radiation being generated by an electric current flowing through the at least one optoelectronic laser, a transistor configured to modulate the electric current flowing through the at least one optoelectronic laser in order to switch on and off generation of the excitation radiation and a spectrometer configured to analyze Raman light scattered from the sample in response to exposing the sample to the excitation radiation, wherein the Raman light includes one or more spectral components, wherein the spectrometer includes a diffraction element configured to split the Raman light into the spectral components, and wherein the diffraction element includes at least a photonic crystal or a plasmonic Fabry Perot filter.

公开(公告)号：US12106980B2

公开(公告)日：2024-10-01

申请号：US17604977

申请日：2019-07-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert Halbritter ,  Alexander Pfeuffer ,  Mikko Peraelae

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67132 ,  H01L21/67144 ,  H01L21/683

Abstract: In an embodiment an adhesive transfer stamp for transferring semiconductor chips includes a volume region including an electrically insulating material, at least one adhesive surface configured to receive a semiconductor chip and an electrically conductive element configured to electrically conductively connected to a ground conductor during operation and to dissipate electrical charges from the semiconductor chip to the ground conductor, wherein the volume region is embodied as a solid body, and wherein the volume region has at least one stepped structure.

公开(公告)号：US20230335690A1

公开(公告)日：2023-10-19

申请号：US18326801

申请日：2023-05-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried HERRMANN ,  Hubert Halbritter ,  Peter Brick ,  Thomas Schwarz ,  Laura Kreiner ,  Petrus Sundgren ,  Jean-Jacques Drolet ,  Michael Brandl ,  Xue Wang ,  Andreas Biebersdorf ,  Christoph Klemp ,  Ines Pietzonka ,  Julia Stolz ,  Simon Schwalenberg ,  Andreas Leber ,  Christine Rafael ,  Eva-Maria Rummel ,  Nicole Heitzer ,  Marie Assmann ,  Erwin Lang ,  Andreas Rausch ,  Marc Philippens ,  Karsten Diekmann ,  Stefan Illek ,  Christian Berger ,  Felix Feix ,  Ana Kanevce ,  Georg Bogner ,  Karl Engl

IPC: H01L33/52 ,  H01L33/50 ,  H01L33/60 ,  H01L33/04 ,  H01L25/075

CPC classification number: H01L33/52 ,  H01L33/502 ,  H01L33/60 ,  H01L33/04 ,  H01L25/0753 ,  B60K2370/1523 ,  B60K35/00

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US11684269B2

公开(公告)日：2023-06-27

申请号：US16479667

申请日：2018-01-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mikko Perälä ,  Désirée Queren ,  Hubert Halbritter

IPC: A61B5/00 ,  A61B5/0205 ,  A61B5/1455 ,  A61B5/024

CPC classification number: A61B5/0205 ,  A61B5/14552 ,  A61B5/6826 ,  A61B5/7257 ,  A61B5/02433 ,  A61B2562/0233 ,  A61B2562/046

Abstract: A sensor that detects a heart rate and/or a blood oxygen content includes a radiation source and a photodetector, wherein the radiation source includes a light-emitting diode array, the light-emitting diode array includes a plurality of emission regions, the emission regions each include a first light-emitting diode and a second light-emitting diode, the first light-emitting diode includes a first wavelength, the second light-emitting diode includes a second wavelength, and a distance between the first light-emitting diode and the second light-emitting diode within the emission regions is 100 micrometers or less.