Abstract:
A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.
Abstract:
A light emitting device is disclosed. In an embodiment a light-emitting device includes a pixel comprising at least three sub-pixels, wherein the at least three sub-pixel include a first sub-pixel including a first conversion element, wherein the first conversion element includes a green phosphor, a second sub-pixel including a second conversion element, wherein the second conversion element includes a red phosphor and a third sub-pixel free of a conversion element, wherein the third sub-pixel is configured to emit blue primary radiation, wherein each sub-pixels has an edge length of at most 100 μm, and wherein the pixel is a linear chain of sub-pixels and a plurality of pixels is arranged in a two dimensional ordered pattern so that a first sub-pixel is never adjacent to a third sub-pixel in a vertical direction and in a horizontal direction of the ordered pattern.
Abstract:
A pulse oximetry device includes a light emission device configured to emit light with a wavelength in a first wavelength interval and light with a wavelength in a second wavelength interval, a first light detector configured to detect light with a wavelength in the first wavelength interval, but not to respond to light with a wavelength in the second wavelength interval, and a second light detector configured to detect light with a wavelength in the first wavelength interval and detect light with a wavelength in the second wavelength interval, wherein the light emission device has a first light-emitting diode structure configured to emit light with a wavelength in the first wavelength interval, and a second light-emitting diode structure configured to emit light with a wavelength in the second wavelength interval, and the first light-emitting diode structure and the second light-emitting diode structure are arranged in a common light-emitting diode chip.
Abstract:
An optical sensor that captures a heart rate and/or a blood oxygen content includes a light source including a light emitter that emits electromagnetic radiation with a first wavelength range including green light, a second wavelength range including red light and a third wavelength range including infrared radiation, and three light detectors, each including a filter for electromagnetic radiation, wherein a first filter is transmissive for light of the first wavelength range and non-transmissive for light of the second wavelength range and the infrared radiation of the third wavelength range, a second filter is transmissive for light of the second wavelength range and non-transmissive for light of the first wavelength range and the infrared radiation of the third wavelength range and a third filter is transmissive for the infrared radiation of the third wavelength range and non-transmissive for light of the first and the second wavelength range.
Abstract:
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes A) providing an auxiliary carrier; B) applying a sacrificial layer on the auxiliary carrier; C) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; D) providing a semiconductor layer sequence; E) optionally applying an adhesive layer on the semiconductor layer sequence; F) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and G) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.
Abstract:
An optoelectronic component including a housing having at least one first cutout and at least one first semiconductor chip arranged in the first cutout, wherein the first cutout is a first reflector that reflects radiation generated during operation of the first semiconductor chip, the first reflector has a surface, and the surface has a targeted setting of an emission characteristic of the radiation emitted by the first semiconductor chip during operation.
Abstract:
An optoelectronic component including a housing having at least one first cutout and at least one first semiconductor chip arranged in the first cutout, wherein the first cutout is a first reflector that reflects radiation generated during operation of the first semiconductor chip, the first reflector has a surface, and the surface has a targeted setting of an emission characteristic of the radiation emitted by the first semiconductor chip during operation.
Abstract:
An arrangement is disclosed. The arrangement comprises at least one semiconductor structure configured to convert a primary radiation into a secondary radiation; an encapsulation layer covering the at least one semiconductor structure; and at least one reflective layer arranged on the encapsulation layer. The semiconductor structure is arranged in a center of the arrangement, and a lateral extent of the arrangement is chosen such that an optically resonant condition is fulfilled for a wavelength of the secondary radiation in the encapsulation layer. Methods for producing an arrangement and an optoelectronic device are also disclosed.
Abstract:
An optoelectronic component includes a semiconductor chip configured to emit radiation at least via a main radiation surface, a converter element arranged in a beam path of the semiconductor chip, an encapsulating element including a cover element and a side element and forming at least a seal for the converter element against environmental influences, wherein the cover element is arranged above the converter element and the side element, in the cross-section, is arranged laterally to the semiconductor chip and converter element and surrounds the semiconductor chip, the side element and the cover element are in direct contact at least in regions, and the side element includes at least one metal and is in direct contact with the converter element in the lateral direction.
Abstract:
An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.