公开(公告)号：EP2238624B1

公开(公告)日：2013-06-05

申请号：EP08871711.1

申请日：2008-12-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： BUTENDEICH, Rainer ,  WINDISCH, Reiner

IPC: H01L31/0352 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/03529 ,  H01L31/02162 ,  H01L31/105 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

公开(公告)号：EP2467447A1

公开(公告)日：2012-06-27

申请号：EP10747437.1

申请日：2010-08-11

Applicant: OSRAM AG ,  Osram Opto Semiconductors Gmbh

Inventor： BAUMANN, Frank ,  BOENISCH, Norbert ,  FIEDLER, Tim ,  JERMANN, Frank ,  LANGE, Stefan ,  WINDISCH, Reiner

IPC: C09K11/08 ,  C09K11/77

CPC classification number: C09K11/0883 ,  C09K11/7728 ,  C09K11/7774 ,  H01L33/504 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  Y02B20/181 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A conversion LED for producing white has a luminophore mixture comprising a first luminophore of the LuAGaG type and a second luminophore of the nitridosilicate type, allowing very high efficiency.

公开(公告)号：EP2067178A1

公开(公告)日：2009-06-10

申请号：EP07817458.8

申请日：2007-08-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： HEIDBORN, Peter ,  WINDISCH, Reiner ,  WIRTH, Ralph

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L25/0756 ,  H01L33/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to an LED semiconductor element comprising at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked on top of the first active layer in a vertical direction and is serially connected to the first active layer. The first active layer and the second active layer are connected in an electrically conducting manner by means of a contact zone. The invention further relates to different uses of said LED semiconductor element.

Abstract translation: 本发明涉及一种LED半导体元件，其包括至少一个第一辐射产生活性层和至少一个第二辐射产生活性层，所述第二辐射产生活性层在垂直方向上堆叠在第一活性层的顶部上并且串联连接到第一活性层 层。 第一有源层和第二有源层借助于接触区以导电的方式连接。 本发明还涉及所述LED半导体元件的不同用途。

公开(公告)号：EP2062296A1

公开(公告)日：2009-05-27

申请号：EP07817544.5

申请日：2007-09-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WINDISCH, Reiner ,  WIRTH, Ralph ,  GRÖTSCH, Stefan ,  BOGNER, Georg ,  KIRCHBERGER, Günter ,  STREUBEL, Klaus

IPC: H01L25/16 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L24/24 ,  H01L25/0756 ,  H01L25/167 ,  H01L33/08 ,  H01L2224/32145 ,  H01L2924/0002 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

Abstract: The invention relates to an LED semiconductor body (1) comprising at least two radiation-generating active layers (2, 3) which each have a forward voltage (ULED). The number of active layers is adapted to an operating voltage (UB) in such a way that the maximum voltage (UW) falling on a series resistor (10) mounted in series in relation to the active layers (2, 3) is no higher than a voltage (UH) falling on the LED semiconductor body (1). The invention also relates to different uses of the LED semiconductor body.

Abstract translation: 本发明涉及包括至少两个辐射生成有源层（2,3）的LED半导体本体（1），每个辐射生成有源层均具有正向电压（ULED）。 有源层的数量以这样的方式适应于工作电压（UB），使得相对于有源层（2,3）串联安装的串联电阻器（10）上的最大电压（UW）不高于 比落在LED半导体本体（1）上的电压（UH）低。 本发明还涉及LED半导体本体的不同用途。

公开(公告)号：EP2057696A1

公开(公告)日：2009-05-13

申请号：EP08706745.0

申请日：2008-01-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WINDISCH, Reiner

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/10 ,  H01L33/145 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Disclosed is an optoelectronic semiconductor chip (1) comprising a semiconductor member (2) that has a succession of semiconductor layers with an active area (3) which is suitable for generating radiation. The semiconductor chip further comprises: - a radiation-permeable and electrically conductive contact layer (6) that is arranged on the semiconductor member (2), is connected in an electrically conducting manner to the active area (3), and adjoins a structured connecting layer (4) which is applied to the semiconductor member (2); and - an electrode (14) that has a connecting area (140) and is disposed on the semiconductor member (2) on the side of the active region (3) which faces away from the barrier layer (5). The entire surface of the contact layer (6) adjoins the barrier layer (5) in an area of the barrier layer (5) which is covered by the connecting area (140) of the electrode (14).

公开(公告)号：EP1579511A1

公开(公告)日：2005-09-28

申请号：EP03795768.5

申请日：2003-12-18

Applicant: Osram Opto Semiconductors GmbH

Inventor： WINDISCH, Reiner ,  WIRTH, Ralph ,  ZULL, Heribert

IPC: H01L33/00 ,  G03F7/00 ,  H01L21/311

CPC classification number: H01L33/22 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086

Abstract: The invention relates to a method for roughening a surface of a body (1), comprising the following steps: coating the surface with a mask layer (2); applying pre-shaped mask bodies (3) to the mask layer (2); etching though the mask layer at locations that are not covered by mask bodies (3), and; etching the body (1) at locations of its surface that are not covered by the mask layer (2). The invention also relates to an optoelectronic component. By using the mask layer (2) as an additional auxiliary mask, methods having a low selectivity with regard to polystyrene balls can be used for etching.