公开(公告)号：WO2005024961A1

公开(公告)日：2005-03-17

申请号：PCT/DE2004/001708

申请日：2004-07-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  STEIN, Wilhelm ,  WINDISCH, Reiner ,  WIRTH, Ralph ,  PIETZONKA, Ines

Inventor： STEIN, Wilhelm ,  WINDISCH, Reiner ,  WIRTH, Ralph ,  PIETZONKA, Ines

IPC: H01L33/00

CPC classification number: H01L33/40 ,  H01L33/02

Abstract: Strahlungemittierendes Halbleiterbauelement mit einem Halbleiterkörper, umfassend eine erste Hauptfläche (5), eine zweite Hauptfläche (9) und eine Halbleiterschichtenfolge (4) mit einer elektromagnetische Strahlung erzeugenden aktiven Zone (7), wobei die Halbleiterschichtenfolge (4) zwischen der ersten und der zweiten Hauptfläche (5,9) angeordnet ist, eine erste Stromaufweitungsschicht (3) auf der ersten Hauptfläche (5) angeordnet und mit der Halbleiterschichtenfolge (4) elektrisch leitend verbunden ist sowie eine zweite Stromaufweitungsschicht (10) auf der zweiten Hauptfläche (9) angeordnet und mit der Halbleiterschichtenfolge (4) elektrisch leitend verbunden ist.

Abstract translation: 发射辐射的半导体元件具有半导体主体，其包括第一主表面（5），一个第二主表面（9）和一个半导体层序列（4）与电磁辐射产生活性区（7），其中，所述半导体层序列（4）在第一和第二主表面之间 （5,9）被布置设置在第一主表面上的第一电流扩展层（3）（5）和与该半导体层序列（4）导电连接，并且在第二主表面（9）的第二电流扩展层（10）和设置有 半导体层序列（4）导电连接。

公开(公告)号：EP2062296B1

公开(公告)日：2017-07-05

申请号：EP07817544.5

申请日：2007-09-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WINDISCH, Reiner ,  WIRTH, Ralph ,  GRÖTSCH, Stefan ,  BOGNER, Georg ,  KIRCHBERGER, Günter ,  STREUBEL, Klaus

IPC: H01L25/16 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L24/24 ,  H01L25/0756 ,  H01L25/167 ,  H01L33/08 ,  H01L2224/32145 ,  H01L2924/0002 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

公开(公告)号：EP1749317B1

公开(公告)日：2017-01-18

申请号：EP05747600.4

申请日：2005-04-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： ILLEK, Stefan ,  STEIN, Wilhelm ,  WALTER, Robert ,  WIRTH, Ralph

IPC: H01L21/20 ,  H01L21/24 ,  H01L21/76 ,  H01L21/363 ,  H01L33/00

CPC classification number: H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

公开(公告)号：EP2351461B1

公开(公告)日：2013-06-12

申请号：EP09799503.9

申请日：2009-11-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H05B33/08

CPC classification number: H05B33/0857 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2554019A1

公开(公告)日：2013-02-06

申请号：EP11720049.3

申请日：2011-03-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph ,  VARGA, Horst

IPC: H05B33/08

CPC classification number: H05B37/02 ,  H05B33/0872

Abstract: An optoelectronic device for emitting mixed light comprises: - a first semiconductor light source (1) having a first light-emitting diode (11), which emits light in a first wavelength range with a first intensity during operation, wherein the first wavelength range and/or the first intensity have/has a first temperature dependence, - a second semiconductor light source (2) having a second light-emitting diode (21, 22), which emits light in a second wavelength range with a second intensity during operation, wherein the first and the second wavelength ranges differ from one another and wherein the second wavelength range and/or the second intensity have/has a second temperature dependence, which differs from the first temperature dependence, - a third semiconductor light source (3) having a third light-emitting diode (31), which emits light in a third wavelength range with a third intensity during operation, - a resistance element (4) having a temperature-dependent electrical resistance, and - a semiconductor light source control element (9) for controlling the intensity of the third semiconductor light source (3), - wherein the following are connected in a parallel circuit: the first series circuit comprising the resistance element (4) and the first semiconductor light source (1) in a first branch (101) of the parallel circuit, the second semiconductor light source (2) in a second branch (102) of the parallel circuit and a second series circuit comprising the third semiconductor light source (3) and the semiconductor light source control element (9) in a third branch (103) of the parallel circuit.

Abstract translation: 一种用于发射混合光的光电子器件，包括：具有第一发光二极管（11）的第一半导体光源（1），该第一发光二极管在工作期间以第一强度发射第一波长范围的光，其中第一波长范围和 /或第一强度具有第一温度依赖性， - 第二半导体光源（2），具有第二发光二极管（21,22），其在操作期间以第二强度发射第二波长范围的光， 其中所述第一波长范围和所述第二波长范围彼此不同，并且其中所述第二波长范围和/或所述第二强度具有不同于所述第一温度依赖性的第二温度依赖性;第三半导体光源（3），其具有 第三发光二极管（31），其在工作期间以第三强度发射第三波长范围的光; - 具有取决于温度的电阻的电阻元件（4） 以及 - 用于控制第三半导体光源（3）的强度的半导体光源控制元件（9）， - 其中以下部件以并联电路连接： - 第一串联电路包括电阻元件（4）和第一 并联电路的第一支路（101）中的半导体光源（1），并联电路的第二支路（102）中的第二半导体光源（2）以及包括第三半导体光源（3）的第二串联电路 ）和在并联电路的第三分支（103）中的半导体光源控制元件（9）。

公开(公告)号：EP2474049A1

公开(公告)日：2012-07-11

申请号：EP10754254.0

申请日：2010-08-06

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WEIDNER, Karl ,  WIRTH, Ralph ,  KALTENBACHER, Axel ,  WEGLEITER, Walter ,  BARCHMANN, Bernd ,  WUTZ, Oliver ,  MARFELD, Jan

IPC: H01L33/44 ,  H05K3/28 ,  H01L33/50 ,  H01L33/62 ,  H01L25/075

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic module, comprising a first semiconductor body (2) having a radiation outlet side (2a), on which an electrical connection area (21, 22) is arranged. The first semiconductor body (2) is arranged with a side, which lies opposite the radiation outlet side (2a), on a carrier (1). An insulation material (3) is arranged laterally next to the first semiconductor body (2) on the carrier (1). Said insulation material forms a fillet and adjoins the semiconductor body (2) in a form-fit manner. An insulation layer (4) is arranged at least in some areas on the first semiconductor body (2) and the insulation material (3). A planar conducting structure is arranged on the insulation layer in order to contact the first semiconductor body (2) in a planar manner. The planar conducting structure is connected to the electrical connection area (21, 22) in an electrically conductive manner. The invention further relates to a method for producing such an optoelectronic module.

公开(公告)号：EP2474048A1

公开(公告)日：2012-07-11

申请号：EP10742132.3

申请日：2010-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WEIDNER, Karl ,  WIRTH, Ralph ,  KALTENBACHER, Axel ,  WEGLEITER, Walter ,  BARCHMANN, Bernd ,  WUTZ, Oliver ,  MARFELD, Jan

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/62 ,  H01L2224/24101 ,  H01L2224/24105 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2224/24998 ,  H01L2224/73267 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: The invention relates to an optoelectronic component (10) comprising at least one semiconductor body (2) having a radiation emission point (20). The point of the semiconductor body (2) opposite the radiation emission point (20) is disposed on a substrate (1), wherein at least one electrical connection region (22) is disposed on the radiation emission point (20). A metallization mound (3) is disposed on the electrical connection region (22). The semiconductor body (2) further at least partially has an insulating layer (4), wherein the metallization mound (3) protrudes past the insulating layer (4). At least one planar conductor structure (5) is disposed on the insulating layer (4) for planar contact with the semiconductor body (2), said structure being electrically conductively connected to the electrical connection region (22) by means of the metallization mound (3). The invention further relates to a method for producing such an optoelectronic component (10).

公开(公告)号：EP2465139A1

公开(公告)日：2012-06-20

申请号：EP10740230.7

申请日：2010-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： VON MALM, Norwin ,  WIRTH, Ralph

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/08

CPC classification number: H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2924/3011 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component is provided, comprising: a light-emitting diode chip (1) having at least two emission regions (2a, 2b) that can be operated independently of each other, at least two differently designed conversion elements (31, 32), wherein during operation of the light-emitting diode chips (1) each of the emission regions (2a, 2b) is provided for generating electromagnetic primary radiation, each emission region (2a, 2b) has an emission surface (21, 22) by which at least part of the primary radiation is decoupled from the light-emitting diode chip (1), the conversion elements (31, 32) are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation, the differently designed conversion elements (31, 32) are disposed downstream of different emission surfaces, and an electric resistance element (4), which is connected in series or parallel to at least one of the emission regions (2a, 2b).

公开(公告)号：EP2122697A1

公开(公告)日：2009-11-25

申请号：EP08706837.5

申请日：2008-01-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： WIRTH, Ralph

IPC: H01L33/00 ,  H01L27/15 ,  H01L25/075

CPC classification number: H01L33/42 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A chip (100) according to the invention comprises at least one semi-conductor body (4), which has a radiation emitting region, and at least one first contact region (5) that provided for the electric contacting of the semi-conductor body (4) and is disposed at a lateral distance from the radiation emitting region. It further comprises an electrically conductive first contact layer (1) permeable to the emitted radiation, the layer connecting a surface of the semi-conductor body (4), which is located on the radiation emitting side of the chip (100), to the first contact region (1), wherein the surface is free of the radiation absorbing contact structures.

公开(公告)号：EP1222696A1

公开(公告)日：2002-07-17

申请号：EP00972599.5

申请日：2000-09-21

Applicant: Osram Opto Semiconductors GmbH & Co. OHG

Inventor： WIRTH, Ralph ,  STREUBEL, Klaus

IPC: H01L33/00

CPC classification number: H01L33/025 ,  H01L33/14 ,  H01L33/22 ,  H01L33/42 ,  H01L2933/0091

Abstract: The light output from a light emitting diode (100), comprising a light generating layer (20) and a relatively thick, transparent current dispersing layer (30), is improved by a vertical structuring of the surfaces of the current dispersing layer (30) and, by means of a second electrical contact layer (50) with a distributed lateral structure, an essentially homogeneous coupling of electrical current in the current dispersing layer (30) can be obtained.