公开(公告)号：US20070111356A1

公开(公告)日：2007-05-17

申请号：US11554437

申请日：2006-10-30

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh Griffin ,  Cormac MacNamara

IPC: H01L21/00 ,  H01L29/82

CPC classification number: H01L31/105 ,  H01L27/1446 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A photodetector includes a semiconductor substrate having first and second main surfaces opposite to each other. The photodetector includes at least one trench formed in the first main surface and a first anode/cathode region having a first conductivity formed proximate the first main surface and sidewalls of the at least one trench. The photodetector includes a second anode/cathode region proximate the second main surface. The second anode/cathode region has a second conductivity opposite the first conductivity. The at least one trench extends to the second main surface of the semiconductor substrate.

Abstract translation: 光检测器包括具有彼此相对的第一和第二主表面的半导体衬底。 光电检测器包括形成在第一主表面中的至少一个沟槽和第一阳极/阴极区域，其具有靠近第一主表面和至少一个沟槽的侧壁附近形成的第一导电性。 光电检测器包括靠近第二主表面的第二阳极/阴极区域。 第二阳极/阴极区具有与第一导电性相反的第二导电性。 至少一个沟槽延伸到半导体衬底的第二主表面。

公开(公告)号：US06310510B1

公开(公告)日：2001-10-30

申请号：US09691261

申请日：2000-10-19

Applicant: Richard Goldman ,  Robin Wilson

Inventor： Richard Goldman ,  Robin Wilson

IPC: E05F110

CPC classification number: G05F3/225 ,  G05F3/265

Abstract: A current reference circuit comprises a positive temperature coefficient circuit and a negative temperature coefficient circuit, the temperature coefficients of which can be adjusted to give a temperature independent output current. The base of a transistor in the positive temperature coefficient circuit is connected to the base of a transistor in the negative temperature coefficient circuit to bias it.

Abstract translation: 电流参考电路包括正温度系数电路和负温度系数电路，其温度系数可以被调节以提供与温度无关的输出电流。 正温度系数电路中的晶体管的基极连接到负温度系数电路中的晶体管的基极以使其偏置。

公开(公告)号：US08249500B2

公开(公告)日：2012-08-21

申请号：US11362311

申请日：2006-02-24

Applicant: Robin Wilson

Inventor： Robin Wilson

IPC: H04B5/00

CPC classification number: G06K7/10237 ,  G06K19/0723

Abstract: An NFC device configured at least in part as an integrated circuit, the integrated circuit including a controller and a plurality of capacitors. The controller is operable to control one or more of the plurality of capacitors to vary an operating parameter of the NFC device.

Abstract translation: 至少部分地被配置为集成电路的NFC装置，所述集成电路包括控制器和多个电容器。 控制器可操作以控制多个电容器中的一个或多个以改变NFC设备的操作参数。

公开(公告)号：US08169057B2

公开(公告)日：2012-05-01

申请号：US12116286

申请日：2008-05-07

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L29/868

CPC classification number: H01L27/0814 ,  H01L29/868 ,  Y10S438/979 ,  Y10S438/983

Abstract: A positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode includes a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate is of a first conductivity. The PIN/NIP diode includes at least one trench formed in the first main surface which defines at least one mesa. The trench extends to a first depth position in the semiconductor substrate. The PIN/NIP diode includes a first anode/cathode layer proximate the first main surface and the sidewalls and the bottom of the trench. The first anode/cathode layer is of a second conductivity opposite to the first conductivity. The PIN/NIP diode includes a second anode/cathode layer proximate the second main surface, a first passivation material lining the trench and a second passivation material lining the mesa. The second anode/cathode layer is the first conductivity.

Abstract translation: 正 - 内 - 负（PIN）/负 - 本征 - 正（NIP）二极管包括具有彼此相对的第一和第二主表面的半导体衬底。 半导体衬底具有第一导电性。 PIN / NIP二极管包括形成在第一主表面中的至少一个沟槽，其限定至少一个台面。 沟槽延伸到半导体衬底中的第一深度位置。 PIN / NIP二极管包括靠近第一主表面和沟槽的侧壁和底部的第一阳极/阴极层。 第一阳极/阴极层具有与第一导电性相反的第二导电性。 PIN / NIP二极管包括靠近第二主表面的第二阳极/阴极层，衬在沟槽上的第一钝化材料和衬在台面上的第二钝化材料。 第二阳极/阴极层是第一导电性。

公开(公告)号：US07972934B2

公开(公告)日：2011-07-05

申请号：US12142185

申请日：2008-06-19

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L21/76

CPC classification number: H01L27/14683 ,  H01L27/1463

Abstract: A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.

Abstract translation: 光电检测器阵列包括具有相对的第一和第二主表面的半导体衬底，靠近第一主表面的第一掺杂浓度的第一层和靠近第二主表面的第二掺杂浓度的第二层。 光电检测器包括形成在第一主表面中的至少一个导电通孔和靠近第一主表面和至少一个导电通孔的阳极/阴极区域。 通孔延伸到第二主表面。 导电通孔通过第一电介质材料与半导体衬底隔离。 阳极/阴极区域是与第一导电性相反的第二导电性。 光电检测器包括形成在第一主表面中并延伸穿过半导体衬底的第一层的至少第二层半导体衬底的第三掺杂浓度的掺杂隔离区。

公开(公告)号：US20100112941A1

公开(公告)日：2010-05-06

申请号：US12532737

申请日：2008-03-20

Applicant: Joakim Bangs ,  Robin Wilson ,  Franz Fuchs

Inventor： Joakim Bangs ,  Robin Wilson ,  Franz Fuchs

IPC: H04B5/00

CPC classification number: H04B5/0012 ,  G06K7/10237 ,  H04B5/0081

Abstract: An NFC communicator has an antenna circuit to enable inductive coupling, via an RF H field, of the NFC communicator and another near field RF communicator in near field range. The antenna circuit has an antenna element coupled in parallel with a first capacitor to form a parallel LC circuit. The antenna element has an antenna coil in series with a second capacitor to reduce the voltage to which circuitry of the NFC communicator is subjected by a received RF H field. Alternatively or additionally, receive circuitry of the NFC communicator may be coupled to only a proportion of the antenna coil to reduce the voltage to which circuitry of the NFC communicator is subjected by a received RF H field.

Abstract translation: NFC通信器具有天线电路，用于经由NFC通信器的RF H场和近场范围内的另一近场RF通信器进行电感耦合。 天线电路具有与第一电容器并联耦合以形成并联LC电路的天线元件。 天线元件具有与第二电容器串联的天线线圈，以减少NFC通信器的电路受到接收的RF H场的影响。 或者或另外，NFC通信器的接收电路可以仅耦合到天线线圈的一部分，以降低NFC通信器的电路受到接收的RF H场的影响。

公开(公告)号：US20090224352A1

公开(公告)日：2009-09-10

申请号：US12411933

申请日：2009-03-26

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L31/02

CPC classification number: H01L27/1446 ,  H01L21/76898 ,  H01L31/18

Abstract: A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a second conductivity proximate the second main surface. A via is formed in the substrate which extends to a first depth position relative to the first main surface. The via has a first aspect ratio. Generally simultaneously with forming the via, an isolation trench is formed in the substrate spaced apart from the via which extends to a second depth position relative to the first main surface. The isolation trench has a second aspect ratio different from the first aspect ratio.

Abstract translation: 一种制造光电二极管阵列的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。 半导体衬底具有靠近第一主表面的第一导电的第一层和靠近第二主表面的第二导电的第二层。 在衬底中形成通孔，该通孔相对于第一主表面延伸到第一深度位置。 通孔具有第一宽高比。 通常在形成通孔的同时，在与通孔间隔开的基板中形成隔离沟槽，其相对于第一主表面延伸到第二深度位置。 隔离沟槽具有与第一宽高比不同的第二宽高比。

公开(公告)号：US07489014B2

公开(公告)日：2009-02-10

申请号：US11681543

申请日：2007-03-02

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L31/075

CPC classification number: H01L27/1446 ,  H01L31/022408

Abstract: A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.

公开(公告)号：US20080315368A1

公开(公告)日：2008-12-25

申请号：US12202638

申请日：2008-09-02

Applicant: Cormac MacNamara ,  Conor Brogan ,  Hugh J. Griffin ,  Robin Wilson

Inventor： Cormac MacNamara ,  Conor Brogan ,  Hugh J. Griffin ,  Robin Wilson

IPC: H01L23/538

CPC classification number: H01L21/76898 ,  B81B2207/096 ,  B81C1/00301 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having first and second main surfaces opposite to each other. A trench is formed in the semiconductor substrate at the first main surface. The trench extends to a first depth position in the semiconductor substrate. The trench is lined with the dielectric material. The trench is filled with a conductive material. An electrical component is electrically connected to the conductive material exposed at the first main surface. A cap is mounted to the first main surface. The cap encloses the electrical component and the electrical connection.

Abstract translation: 一种制造半导体器件的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。 在第一主表面上的半导体衬底中形成沟槽。 沟槽延伸到半导体衬底中的第一深度位置。 沟槽衬有介电材料。 沟槽填充有导电材料。 电气部件电连接到在第一主表面露出的导电材料。 盖子安装到第一主表面。 盖子包围电气部件和电气连接。

公开(公告)号：US20080248608A1

公开(公告)日：2008-10-09

申请号：US12116638

申请日：2008-05-07

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L21/00

CPC classification number: H01L27/1446 ,  H01L31/022408

Abstract: A photodiode includes a semiconductor having front and backside surfaces and first and second active layers of opposite conductivity, separated by an intrinsic layer. A plurality of isolation trenches filled with conductive material extend into the first active layer, dividing the photodiode into a plurality of cells and forming a central trench region in electrical communication with the first active layer beneath each of the cells. Sidewall active diffusion regions extend the trench depth along each sidewall and are formed by doping at least a portion of the sidewalls with a dopant of first conductivity. A first contact electrically communicates with the first active layer beneath each of the cells via the central trench region. A plurality of second contacts each electrically communicate with the second active layer of one of the plurality of cells. The first and second contacts are formed on the front surface of the photodiode.

Abstract translation: 光电二极管包括具有前后表面的半导体以及由本征层隔开的相反电导率的第一和第二有源层。 填充有导电材料的多个隔离沟槽延伸到第一有源层中，将光电二极管分成多个单元并形成与每个单元下面的第一有源层电连通的中心沟槽区。 侧壁有源扩散区域沿着每个侧壁延伸沟槽深度，并且通过用第一导电性的掺杂剂掺杂至少一部分侧壁而形成。 第一接触件经由中心沟槽区域与每个电池单元之下的第一有源层电连通。 多个第二触点分别与多个单元之一的第二活性层电连通。 第一和第二触点形成在光电二极管的前表面上。