公开(公告)号：US07910479B2

公开(公告)日：2011-03-22

申请号：US12411933

申请日：2009-03-26

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L21/44

CPC classification number: H01L27/1446 ,  H01L21/76898 ,  H01L31/18

Abstract: A method for manufacturing a photodiode array includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has a first layer of a first conductivity proximate the first main surface and a second layer of a second conductivity proximate the second main surface. A via is formed in the substrate which extends to a first depth position relative to the first main surface. The via has a first aspect ratio. Generally simultaneously with forming the via, an isolation trench is formed in the substrate spaced apart from the via which extends to a second depth position relative to the first main surface. The isolation trench has a second aspect ratio different from the first aspect ratio.

Abstract translation: 一种制造光电二极管阵列的方法包括提供具有彼此相对的第一和第二主表面的半导体衬底。 半导体衬底具有靠近第一主表面的第一导电的第一层和靠近第二主表面的第二导电的第二层。 在衬底中形成通孔，该通孔相对于第一主表面延伸到第一深度位置。 通孔具有第一宽高比。 通常在形成通孔的同时，在与通孔间隔开的基板中形成隔离沟槽，其相对于第一主表面延伸到第二深度位置。 隔离沟槽具有与第一宽高比不同的第二宽高比。

公开(公告)号：US20100291869A1

公开(公告)日：2010-11-18

申请号：US12743208

申请日：2008-11-14

Applicant: Robin Wilson

Inventor： Robin Wilson

IPC: H04B5/00

CPC classification number: H02H7/22 ,  G05F1/46 ,  G06K7/10237 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H04B5/00 ,  H04B5/0031 ,  H04B5/0037 ,  H04B5/0075 ,  Y02D70/166

Abstract: A near field RF communicator has an inductive coupler (223) to enable inductive coupling with a magnetic field of an RF signal; a rectifier (213,214,215,216) to rectify an AC voltage derived from an RF signal inductively coupled to the inductive coupler (223); and a regulator (209,210,211,220,221,900) to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler, the regulator having a voltage-controlled impedance (210, 211) and a regulator controller (209) to provide a control voltage for the voltage controlled impedance and to vary the control voltage in dependence upon a current flowing through the voltage controlled impedance (210, 211). To prevent the voltage regulator from drawing excess current and energy from an RF field in which the communicator is present the voltage regulator is controlled to provide a chosen impedance characteristic.

Abstract translation: 近场RF通信器具有电感耦合器（223），以使得能够与RF信号的磁场进行电感耦合; 整流器（213,214,215,216），用于对从感应耦合到电感耦合器（223）的RF信号导出的AC电压进行整流; 以及调节器（209,210,211,22,221,900），用于调节从感应耦合到所述电感耦合器的RF信号导出的电压，所述调节器具有压控阻抗（210,211）和调节器控制器（209），以提供所述电压的控制电压 并且根据流经电压控制阻抗的电流（210,211）来改变控制电压。 为了防止电压调节器从存在通信器的RF场抽取过多的电流和能量，控制电压调节器以提供所选择的阻抗特性。

公开(公告)号：US07528458B2

公开(公告)日：2009-05-05

申请号：US11681576

申请日：2007-03-02

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L31/075 ,  H01L31/00

CPC classification number: H01L27/1446 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14683 ,  H01L31/105

Abstract: A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed.

Abstract translation: 光敏面积比例增加到光不敏感区域的光电二极管包括具有背面和感光前侧表面的半导体。 半导体包括具有第一导电性的第一有源层，具有与第一导电性相反的第二导电性的第二有源层和分离第一和第二有源层的本征层。 布置多个隔离沟以将光电二极管分成多个单元。 每个细胞具有包括对光敏感的细胞活性前方区域和对光不敏感的细胞非活动的前侧区域的总前方区域。 细胞活动前方区域形成至少95％的细胞总前方区域。 还公开了一种形成光电二极管的方法。

公开(公告)号：US20080315345A1

公开(公告)日：2008-12-25

申请号：US12203995

申请日：2008-09-04

Applicant: Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

Inventor： Robin Wilson ,  Conor Brogan ,  Hugh J. Griffin ,  Cormac MacNamara

IPC: H01L21/302 ,  H01L23/58

CPC classification number: H01L21/78

Abstract: A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the first main surface of the semiconductor substrate. A device layer has a first main surface and a second main surface. The second main surface of the device layer is disposed on a surface of the dielectric layer opposite to the semiconductor substrate. A plurality of intended die areas are defined on the first main surface of the device layer. The plurality of intended die areas are separated from one another. A plurality of die access trenches are formed in the semiconductor substrate from the second main surface. Each of the plurality of die access trenches are disposed generally beneath at least a respective one of the plurality of intended die areas.

Abstract translation: 绝缘体上半导体（SOI）晶片包括具有彼此相对的第一和第二主表面的半导体衬底。 电介质层设置在半导体衬底的第一主表面的至少一部分上。 器件层具有第一主表面和第二主表面。 器件层的第二主表面设置在与半导体衬底相对的电介质层的表面上。 在设备层的第一主表面上限定多个预期的管芯区域。 多个预期的模具区域彼此分离。 多个裸片存取沟槽从第二主表面形成在半导体衬底中。 多个管芯存取沟槽中的每一个通常设置在多个预期管芯区域中的至少一个相应的一个的下方。

公开(公告)号：US20080315247A1

公开(公告)日：2008-12-25

申请号：US12191035

申请日：2008-08-13

Applicant: Conor Brogan ,  Cormac MacNamara ,  Hugh J. Griffin ,  Robin Wilson

Inventor： Conor Brogan ,  Cormac MacNamara ,  Hugh J. Griffin ,  Robin Wilson

IPC: H01L29/00

CPC classification number: H01L21/2007 ,  H01L21/76251 ,  H01L29/0634 ,  H01L29/66143 ,  H01L29/872

Abstract: A bonded-wafer semiconductor device includes a semiconductor substrate, a buried oxide layer disposed on a first main surface of the semiconductor substrate and a multi-layer device stack. The multi-layer device stack includes a first device layer of a first conductivity disposed on the buried oxide layer, a second device layer of a second conductivity disposed on the first device layer, a third device layer of the first conductivity disposed on the second device layer and a fourth device layer of the second conductivity disposed on the third device layer. A trench is formed in the multi-layer device stack. A mesa is defined by the trench. The mesa has first and second sidewalls. A first anode/cathode layer is disposed on a first sidewall of the multi-layer device stack, and a second anode/cathode layer is disposed on the second sidewall of the multi-layer device stack.

Abstract translation: 接合晶片半导体器件包括半导体衬底，设置在半导体衬底的第一主表面上的掩埋氧化物层和多层器件堆叠。 多层器件堆叠包括设置在掩埋氧化物层上的第一导电体的第一器件层，设置在第一器件层上的第二导电体的第二器件层，设置在第二器件上的第一导电体的第三器件层 层和设置在第三器件层上的第二导电体的第四器件层。 在多层器件堆叠中形成沟槽。 台面由沟槽定义。 台面具有第一和第二侧壁。 第一阳极/阴极层设置在多层器件堆叠的第一侧壁上，第二阳极/阴极层设置在多层器件堆叠的第二侧壁上。

公开(公告)号：US20070026825A1

公开(公告)日：2007-02-01

申请号：US11362288

申请日：2006-02-24

Applicant: Robin Wilson

Inventor： Robin Wilson

IPC: G06F3/033

CPC classification number: G06K19/0723 ,  G06K7/0008 ,  G06K7/10237

Abstract: An NFC device comprises a modulationdepth detector (114) capable of detecting a plurality of different modulation depths, said detector responsive to receipt of a signal (105, 106) by said NFC device to determine which modulation depth of said plurality of different modulation depths has been used to modulate said signal received by said NFC device and generate a signal (117) for transmission to a controller (100) that indicates the modulation depth of said received signal, said controller (100) being configured on receipt of said signal from said detector (114) to select for demodulation of subsequent signals received by said NFC system a demodulator (115, 116) that is capable of demodulating signals of the modulation depth detected by said detector (114). The controller (100) may form a part of the NFC device itself or be a part of host apparatus in which the NFC device is located.

Abstract translation: NFC设备包括能够检测多个不同调制深度的调制深度检测器（114），所述检测器响应于所述NFC设备接收信号（105,106），以确定所述多个不同调制深度的调制深度具有 被用于调制由所述NFC设备接收的所述信号并产生用于发送给指示所述接收信号的调制深度的控制器（100）的信号（117），所述控制器（100）在接收到来自所述接收信号的所述信号 检测器（114）选择用于解调由所述NFC系统接收的后续信号，解调器（115,116），其能够解调由所述检测器（114）检测到的调制深度的信号。 控制器（100）可以形成NFC设备本身的一部分或者是NFC设备所在的主机设备的一部分。

公开(公告)号：US06326859B1

公开(公告)日：2001-12-04

申请号：US09609061

申请日：2000-06-30

Applicant: Richard Goldman ,  Robin Wilson

Inventor： Richard Goldman ,  Robin Wilson

IPC: H03K30231

CPC classification number: H03K3/011 ,  H03K3/0231 ,  H03K3/354

Abstract: An oscillator circuit includes a current generator which supplies current to input terminals of capacitors in a trimmable capacitor array. The input terminals of the capacitors are held at a relatively constant voltage, and thus all of the current from the current generator passes through the desired capacitors of the capacitor array, thus minimizing the effect of parasitic capacitance.

Abstract translation: 振荡器电路包括电流发生器，其向可调整电容器阵列中的电容器的输入端子提供电流。 电容器的输入端子保持在相对恒定的电压，因此来自电流发生器的所有电流通过电容器阵列的所需电容器，从而使寄生电容的影响最小化。

公开(公告)号：US08588682B2

公开(公告)日：2013-11-19

申请号：US12743208

申请日：2008-11-14

Applicant: Robin Wilson

Inventor： Robin Wilson

IPC: H04B5/00

CPC classification number: H02H7/22 ,  G05F1/46 ,  G06K7/10237 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H04B5/00 ,  H04B5/0031 ,  H04B5/0037 ,  H04B5/0075 ,  Y02D70/166

Abstract: A near field RF communicator has an inductive coupler (223) to enable inductive coupling with a magnetic field of an RF signal; a rectifier (213,214,215,216) to rectify an AC voltage derived from an RF signal inductively coupled to the inductive coupler (223); and a regulator (209,210,211,220,221,900) to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler, the regulator having a voltage-controlled impedance (210, 211) and a regulator controller (209) to provide a control voltage for the voltage controlled impedance and to vary the control voltage in dependence upon a current flowing through the voltage controlled impedance (210, 211). To prevent the voltage regulator from drawing excess current and energy from an RF field in which the communicator is present the voltage regulator is controlled to provide a chosen impedance characteristic.

Abstract translation: 近场RF通信器具有电感耦合器（223），以使得能够与RF信号的磁场进行电感耦合; 整流器（213,214,215,216），用于对从感应耦合到电感耦合器（223）的RF信号导出的AC电压进行整流; 以及调节器（209,210,211,22,221,900），用于调节从感应耦合到所述电感耦合器的RF信号导出的电压，所述调节器具有压控阻抗（210,211）和调节器控制器（209），以提供所述电压的控制电压 并且根据流经电压控制阻抗的电流（210,211）来改变控制电压。 为了防止电压调节器从存在通信器的RF场抽取过多的电流和能量，控制电压调节器以提供所选择的阻抗特性。

公开(公告)号：US08253243B2

公开(公告)日：2012-08-28

申请号：US13179175

申请日：2011-07-08

Applicant: Robin Wilson

Inventor： Robin Wilson

IPC: H01L23/34 ,  H01L21/00

CPC classification number: H01L29/34 ,  B81C1/00952 ,  B81C2201/115 ,  H01L21/76251

Abstract: A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.

Abstract translation: 一种制造半导体器件的方法包括提供第一和第二半导体衬底，每个具有彼此相对的第一和第二主表面。 粗糙表面形成在第一半导体衬底的第一主表面和第二半导体衬底的第二主表面中的至少一个上。 电介质层形成在半导体衬底的第一主表面上，第二半导体衬底设置在与第一半导体衬底相对的电介质层上。 第二半导体衬底的第二主表面接触电介质层。

公开(公告)号：US20110306295A1

公开(公告)日：2011-12-15

申请号：US13130365

申请日：2009-11-26

Applicant: Paul Butler ,  David Miles ,  Robin Wilson

Inventor： Paul Butler ,  David Miles ,  Robin Wilson

IPC: H04B5/00 ,  H02M7/02

CPC classification number: G05F1/613 ,  H02J5/005 ,  H02J7/025 ,  H02J50/10 ,  H04B5/0037 ,  H04B5/0081

Abstract: A NFC enabled device to couple inductively to the H field of an RF signal and a regulator to regulate a voltage derived from an RF signal inductively coupled to the inductive coupler. The regulator has at least one voltage controlled impedance having a switch on voltage. A regulator controller provides a control voltage to each voltage controlled impedance such as that the control voltage is not less than the switch on voltage of the voltage controlled impedance.

Abstract translation: 一种启用NFC的设备，用于将电感耦合到RF信号的H场和调节器，以调节从感应耦合到电感耦合器的RF信号导出的电压。 调节器具有至少一个具有接通电压的压控阻抗。 调节器控制器为每个电压控制的阻抗提供控制电压，例如控制电压不小于压控阻抗的开启电压。