公开(公告)号：US20210202302A1

公开(公告)日：2021-07-01

申请号：US17190004

申请日：2021-03-02

Applicant: Soitec ,  COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frédéric Mazen ,  Damien Massy ,  Shay Reboh ,  François Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

Abstract: Substrates may include a useful layer affixed to a support substrate. A surface of the useful layer located on a side of the useful layer opposite the support substrate may include a first region and a second region. The first region may have a first surface roughness, may be located proximate to a geometric center of the surface, and may occupy a majority of an area the surface. The second region may have a second, higher surface roughness, may be located proximate to a periphery of the surface, and may occupy a minority of the area of the surface.

公开(公告)号：US10950491B2

公开(公告)日：2021-03-16

申请号：US16324461

申请日：2017-08-01

Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives ,  Soitec

Inventor： Didier Landru ,  Nadia Ben Mohamed ,  Oleg Kononchuk ,  Frederic Mazen ,  Damien Massy ,  Shay Reboh ,  Francois Rieutord

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/263

Abstract: A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

公开(公告)号：US10510565B2

公开(公告)日：2019-12-17

申请号：US15728953

申请日：2017-10-10

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Sébastien Simon

IPC: H01L21/67 ,  F27D5/00 ,  F27D7/06 ,  H01L21/677 ,  H01L21/762

Abstract: A thermal treatment system includes a chamber capable of receiving a plurality of substrates, a gas intake path in a distal portion of the chamber located opposite an area for entry of substrates into the chamber, and an outlet path for the gas and/or volatile species generated during the thermal treatment. The outlet path is located in a proximal portion of the chamber located near the area for entry of the substrates into the chamber. The system further includes a collector device in the proximal portion of the chamber. The collector device has a confinement opening oriented toward the distal portion of the chamber, and the collector device defines a compartment communicating with the outlet path, the compartment being configured so that the gas and the volatile species enter into the compartment via the confinement opening and pass through the compartment to reach the outlet path.

公开(公告)号：US10134602B2

公开(公告)日：2018-11-20

申请号：US15403505

申请日：2017-01-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Carole David

IPC: H01L21/00 ,  H01L21/3105 ,  H01L21/762 ,  H01L21/324

Abstract: A process for smoothing a silicon-on-insulator structure comprising the exposure of a surface of the structure to an inert or reducing gas flow and to a high temperature during a heat treatment includes performing a first heat treatment step at a first temperature and under a first gas flow defined by a first flow rate, and performing a second heat treatment step at a second temperature lower than the first temperature and under a second gas flow defined by a second flow rate lower than the first flow rate.

公开(公告)号：US09911624B2

公开(公告)日：2018-03-06

申请号：US15350290

申请日：2016-11-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: H01L21/331 ,  H01L21/322 ,  H01L21/762 ,  H01L21/324

CPC classification number: H01L21/3225 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/7624

Abstract: This disclosure relates to a method for dissolving a silicon dioxide layer in a structure, including, from the back surface thereof to the front surface thereof, a supporting substrate, the silicon dioxide layer and a semiconductor layer, the dissolution method being implemented in a furnace in which structures are supported on a support, the dissolution method resulting in the diffusion of oxygen atoms included in the silicon dioxide layer through the semiconductor layer and generating volatile products, and the furnace including traps suitable for reacting with the volatile products, so as to reduce the concentration gradient of the volatile products parallel to the front surface of at least one structure.

公开(公告)号：US09875914B2

公开(公告)日：2018-01-23

申请号：US14898937

申请日：2014-06-11

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/762 ,  H01L21/673 ,  H01L21/02 ,  H01L21/225 ,  H01L21/687

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

公开(公告)号：US09718261B2

公开(公告)日：2017-08-01

申请号：US14947254

申请日：2015-11-20

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Capucine Delage ,  Franck Fournel ,  Elodie Beche

IPC: H01L21/30 ,  B32B37/00 ,  H01L21/20 ,  B32B38/00 ,  H01L21/324 ,  H01L21/762

CPC classification number: B32B37/0007 ,  B32B38/0036 ,  B32B2038/0048 ,  B32B2250/02 ,  B32B2307/728 ,  B32B2309/60 ,  B32B2313/00 ,  B32B2457/14 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/76254

Abstract: A method for assembling two substrates by molecular adhesion comprises: a first step (a) of putting first and second substrates in close contact in order to form an assembly having an assembly interface; a second step (b) of reinforcing the degree of adhesion of the assembly beyond a threshold adhesion value at which water is no longer able to diffuse along the assembly interface. The method also comprises a step (c) of anhydrous treatment of the first and second substrates in a treatment atmosphere having a dew point below −10° C., and control of the dew point of a working atmosphere to which the first and second substrates are exposed from the anhydrous treatment step (c) until the end of the second step (b) so as to limit or prevent the appearance of bonding defects at the assembly interface.

公开(公告)号：US20160372342A1

公开(公告)日：2016-12-22

申请号：US14898937

申请日：2014-06-11

Applicant: SOITEC

Inventor： Didier Landru ,  Oleg Kononchuk ,  Christophe Gourdel ,  Carole David ,  Sebastien Mougel ,  Xavier Schneider

IPC: H01L21/67 ,  H01L21/762 ,  H01L21/02 ,  H01L21/687 ,  H01L21/225

CPC classification number: H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/2255 ,  H01L21/67098 ,  H01L21/67309 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/7624

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Abstract translation: 一种方法包括以下步骤：a）设置适于接收多个结构的室，b）将气流循环到室中，使得室具有非氧化气氛，c）多个 高于该阈值的结构，电介质的氧化物中存在的氧扩散通过有源层与活性层的半导体材料反应并产生挥发性材料，该过程值得注意的是步骤b）是 使得气流在多个结构之间的循环速率大于挥发性物质扩散到气流中的速率。

公开(公告)号：US20160233125A1

公开(公告)日：2016-08-11

申请号：US15018465

申请日：2016-02-08

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/265

CPC classification number: H01L21/76254 ,  H01L21/26506 ,  H01L21/324

Abstract: A method for transferring a useful layer onto a carrier comprises formation of an embrittlement plane by implantation of light species into a first substrate in such a manner as to define the bounds of a useful layer between this plane and a surface of the first substrate, mounting of the carrier onto the surface of the first substrate so as to form an assembly to be fractured, and thermal fracture treatment of the first substrate along the embrittlement plane in such a manner as to transfer the useful layer onto the support. During the thermal fracture treatment, the degree of peripheral adhesion is reduced at the interface between the carrier and the first substrate.

Abstract translation: 用于将有用层转移到载体上的方法包括通过将光物质注入到第一基底中以限定在该平面和第一基底的表面之间的有用层的界限的方式形成脆化平面，安装 的载体形成在第一基板的表面上，以形成要断裂的组件，以及沿着脆化面热处理第一基板，以将有用层转移到载体上。 在热断裂处理期间，在载体和第一基板之间的界面处，周边粘合度降低。

公开(公告)号：US20160152017A1

公开(公告)日：2016-06-02

申请号：US14947254

申请日：2015-11-20

Applicant: Soitec ,  Commissariat A L'Energie Atomique et aux Energies Alternatives

Inventor： Didier Landru ,  Capucine Delage ,  Franck Fournel ,  Elodie Beche

IPC: B32B37/00 ,  H01L21/324 ,  H01L21/762 ,  B32B38/00

CPC classification number: B32B37/0007 ,  B32B38/0036 ,  B32B2038/0048 ,  B32B2250/02 ,  B32B2307/728 ,  B32B2309/60 ,  B32B2313/00 ,  B32B2457/14 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/76254

Abstract: A method for assembling two substrates by molecular adhesion comprises: a first step (a) of putting first and second substrates in close contact in order to form an assembly having an assembly interface; a second step (b) of reinforcing the degree of adhesion of the assembly beyond a threshold adhesion value at which water is no longer able to diffuse along the assembly interface. The method also comprises a step (c) of anhydrous treatment of the first and second substrates in a treatment atmosphere having a dew point below −10° C., and control of the dew point of a working atmosphere to which the first and second substrates are exposed from the anhydrous treatment step (c) until the end of the second step (b) so as to limit or prevent the appearance of bonding defects at the assembly interface.

Abstract translation: 通过分子粘合装配两个基板的方法包括：将第一和第二基板紧密接触的第一步骤（a），以形成具有组装界面的组件; 第二步骤（b），其加强组件的粘附程度超过水不再能够沿组装界面扩散的阈值粘合值。 该方法还包括在露点低于-10℃的处理气氛中对第一和第二基板进行无水处理的步骤（c），以及控制第一和第二基板的工作气氛的露点 从无水处理步骤（c）暴露直到第二步骤（b）结束，以限制或防止在组装界面处出现接合缺陷。