公开(公告)号：JPH07129995A

公开(公告)日：1995-05-19

申请号：JP27856993

申请日：1993-11-08

Applicant: SONY CORP

Inventor： UMETSU NOBUHIKO ,  TAKEMOTO SADAHIRO ,  ASAZUMA YASUNORI

IPC: G11B7/00 ,  G11B7/005 ,  G11B7/14

Abstract: PURPOSE:To reduce the size and weight of this device and to reduce the cost with simple constitution by causing the transmission or reflection of irradiation light and return light to and from a recording medium by a wavelength selection element in recording and reproducing. CONSTITUTION:Optical wavelength multiplex recording by a two-photon recording method is conducted by irradiating the optical wavelength multiplex recording medium 4 with the recording light of the selected wavelength from a light source section by condensing this light thereto via the wavelength selection element 2. At this time, the return from the recording medium 4 is rotated 90 deg. in the plane of polarization and transmits the wavelength selection element 2. This return beam is partly reflected by a beam splitter 23 and is made incident on a detecting section 28, by which a servo signal is obtd. At the time of reproducing, the laser beam from the light source 1 is reflected by the wavelength selection element 2 and the fluorescence generated beam from the recording medium 4 is rotated 90 deg. in the plane laser beam is transmitted through the wavelength selection element 2 and is introduced via a filter 26 and a condenser lens 27 to a photodetecting section 3, by which the recorded information at the respective wavelengths is detected. At this time, the selecting element 2 reflects the reproducing light without allowing the transmission and allows the transmission of only the excited fluorescence. As a result, the recording and reproducing are conducted with the simple constitution.

公开(公告)号：JP2010016232A

公开(公告)日：2010-01-21

申请号：JP2008175718

申请日：2008-07-04

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  TASAI KUNIHIKO ,  TAMAMURA KOJI ,  ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI ,  NAKAMURA HITOSHI ,  FUJISAKI SUMIKO ,  KIKAWA TAKESHI

IPC: H01S5/327

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of improving carrier concentration, and reducing electric resistance.
SOLUTION: An n-type clad layer 12 is formed into a superlattice layer formed by alternately laminating first semiconductor layers 12A and second semiconductor layers 12B. The first semiconductor layer 12A mainly contains a Se mixed crystal without containing Te, and is formed by containing, for instance, Be
x1 Mg
x2 Zn
x3 Se mixed crystal (0≤x1≤1, 0≤x2≤1, 0≤x3≤1 and x1+x2+x3=1). The second semiconductor layer 12B mainly contains a Te mixed crystal, and formed by containing, for instance, a Be
x4 Mg
x5 Zn
x6 Te mixed crystal (0≤x4≤1, 0≤x5≤1, 0≤x6≤1 and x4+x5+x6=1).
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够改善载流子浓度并降低电阻的半导体发光器件。 解决方案：n型覆盖层12形成为通过交替层叠第一半导体层12A和第二半导体层12B而形成的超晶格层。 第一半导体层12A主要包含不含Te的Se混合晶体，并且通过例如含有例如包含ZnSb 3 x SB SB > Se混晶（0≤x1≤1,0≤x2≤1,0≤x3≤1，x1 + x2 + x3 = 1）。 第二半导体层12B主要包含Te混合晶体，并且通过包含例如混合的Be x4 x5 Zn x6 晶体（0≤x4≤1,0≤x5≤1,0≤x6≤1和x4 + x5 + x6 = 1）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010016231A

公开(公告)日：2010-01-21

申请号：JP2008175717

申请日：2008-07-04

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI ,  TASAI KUNIHIKO ,  NAKAMURA HITOSHI

IPC: H01S5/347

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having an excellent temperature characteristic and high in color purity and wavelength stability even when a quaternary mixed crystal is used for an active layer.
SOLUTION: This semiconductor light emitting device includes an active layer 15 with a plurality of quantum dots 15B formed in a bulk 15A. The bulk 15A is mainly formed of a group II-VI quaternary mixed crystal containing Be of a composition ratio of x1 (0≤x1

Abstract translation: 解决的问题：即使将四元混晶体用于活性层，也可提供具有优异的温度特性，色纯度和波长稳定性高的半导体发光元件。 解决方案：该半导体发光器件包括具有形成在体15A中的多个量子点15B的有源层15。 主体15A主要由含有组成比为x1（0≤x1<1）的Be的II-VI族季混合晶体形成为II族元素之一。量子点15B形成为与第II族元素相同的材料体系 的主体15A，特别主要由组成比为x2（x1

公开(公告)号：JP2009059886A

公开(公告)日：2009-03-19

申请号：JP2007225724

申请日：2007-08-31

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  ASAZUMA YASUNORI ,  TASAI KUNIHIKO ,  TAMAMURA KOJI ,  NAKAJIMA HIROSHI ,  NAKAMURA HITOSHI ,  FUJISAKI SUMIKO ,  KIKAWA TAKESHI

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/30

CPC classification number: H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

Abstract: PROBLEM TO BE SOLVED: To provide an n-type clad layer structure, its corresponding active layer, and a p-type clad for easily manufacturing the semiconductor optical element, and device that have excellent luminescence property and the like and high activation rate for Cl doping, that is, high reliability with less crystal defects without using any materials applicable to the RoHS directive.
SOLUTION: The semiconductor light-emitting element is a group II-VI compound semiconductor mainly consisting of the group II-VI compound that is lattice-matched on an InP substrate, wherein the group II atom comprises Mg, Zn and Be, while the group VI atom comprises Se and Te for an n-type layer on the light-emitting element. Such a semiconductor element can constrain the Type II luminescence with a large energy gap and high lowest limit of a conduction band and obtain the high-quality crystalline property with high carrier density and less crystal defects.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供n型覆层结构，其相应的有源层和用于容易地制造半导体光学元件的p型覆层，以及具有优异的发光特性等和高激活的器件 用于Cl掺杂的速率，即不使用任何适用于RoHS指令的材料，具有更少的晶体缺陷的高可靠性。 解决方案：半导体发光元件是主要由在InP衬底上晶格匹配的II-VI族化合物组成的II-VI族化合物半导体，其中II族原子包括Mg，Zn和Be， 而VI族原子包含发光元件上的n型层的Se和Te。 这样的半导体元件可以以大的能隙和导带的高的最低限度来约束II型发光，并且获得具有高载流子密度和较少的晶体缺陷的高质量结晶性质。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008078257A

公开(公告)日：2008-04-03

申请号：JP2006253765

申请日：2006-09-20

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  NAKAMURA HITOSHI ,  ASAZUMA YASUNORI

IPC: C23C14/08 ,  H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/40

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laminated structure with a high effective acceptor concentration. SOLUTION: A buffer layer 11, a p-type semiconductor layer 12 and a p-type contact layer 13 are laminated on one side of a substrate 10 in this order. The p-type semiconductor layer 12 is constituted by laminating a first semiconductor layer 12A having oxide semiconductor as its principal constituent and a second semiconductor layer 12B consisting of non-oxide semiconductor and showing p-type electric conductivity alternately on the buffer layer 11 repeatedly, and the first semiconductor layer 12A and the second semiconductor layer 12B are provided with super lattice structure. According to this method, a hole in the second semiconductor layer 12B is excited by the valence band of the first semiconductor layer 12A. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供具有高有效受体浓度的半导体层叠结构。 解决方案：缓冲层11，p型半导体层12和p型接触层13依次层叠在基板10的一侧。 p型半导体层12通过层叠具有氧化物半导体作为其主要成分的第一半导体层12A和由非氧化物半导体构成的第二半导体层12B，并且在缓冲层11上交替显示p型导电性， 并且第一半导体层12A和第二半导体层12B具有超晶格结构。 根据该方法，第二半导体层12B中的空穴被第一半导体层12A的价带激发。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008053497A

公开(公告)日：2008-03-06

申请号：JP2006228808

申请日：2006-08-25

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  ASAZUMA YASUNORI ,  NAKAMURA HITOSHI ,  OTOSHI SO ,  KIKAWA TAKESHI ,  FUJISAKI SUMIKO ,  TANAKA SHIGEHISA

IPC: H01S5/347

CPC classification number: H01S5/327 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/347 ,  H01S2301/173 ,  H01S2304/02

Abstract: PROBLEM TO BE SOLVED: To achieve a laminated structure for room-temperature continuous oscillation of a Be-based group II-VI semiconductor laser using an InP substrate.
SOLUTION: A basic structure of a semiconductor laser is composed by using a lattice-matched group II-VI semiconductor including Be on the InP substrate. In order to enhance carrier injection efficiency into an active layer, the laminated structure is composed as follows: the active layer, a light guide layer, and a clad layer are composed by a double-hetero structure having an I-type band lineup. It is composed so as to have the active layer, the light guide layer, and the clad layer that strengthen light trapping into the active layer. The clad layer is composed of a bulk crystal.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：为了实现使用InP衬底的基于Be的II-VI族半导体激光器的室温连续振荡的层压结构。 解决方案：通过在InP衬底上使用包括Be的晶格匹配组II-VI半导体来构成半导体激光器的基本结构。 为了将载流子注入效率提高到有源层，层叠结构如下：有源层，导光层和包层由具有I型带阵列的双异质结构构成。 它被构成为具有加强光捕获到有源层中的有源层，导光层和包层。 包层由块状晶体组成。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007227632A

公开(公告)日：2007-09-06

申请号：JP2006046825

申请日：2006-02-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01S5/062

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of outputting beams having a desired luminous-intensity distribution from the beams emitted from a broad-area semiconductor laser changing the luminous-intensity distribution with the lapse of the time after an oscillation.
SOLUTION: The semiconductor laser device 1A has the broad-area semiconductor laser 2 emitting laser beams, and a shutter 3 changing over the shielding and passage of laser beams emitted from the semiconductor laser 2. The semiconductor laser device 1A further has a pulse controller 4 opening and closing the shutter 3 in synchronism with the pulse driving of the semiconductor laser 2, at a timing preset in response to the time after the semiconductor laser 2 starts its oscillation and the change of the luminous-intensity distribution (an NFP) on an outgoing end face, and at the timing of bringing the NFP close to a uniform distribution.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供一种能够从广域半导体激光器发射的光束输出具有期望的发光强度分布的光束的半导体激光装置，其随着时间的推移改变发光强度分布 振荡。 解决方案：半导体激光装置1A具有发射激光束的广域半导体激光器2和切换从半导体激光器2发射的激光束的屏蔽和通过的快门3.半导体激光装置1A还具有 脉冲控制器4响应于半导体激光器2开始振荡之后的时间和发光强度分布的变化（NFP），以与半导体激光器2的脉冲驱动同步的开关3打开和关闭活门3 ），并且在使NFP接近均匀分布的时刻。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007035940A

公开(公告)日：2007-02-08

申请号：JP2005217331

申请日：2005-07-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01S5/042

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of reducing speckle noise, and to provide a method for driving a semiconductor laser element.
SOLUTION: The semiconductor laser device includes the semiconductor laser element 1 and a driving circuit 2. The semiconductor laser element 1 includes a laser structure for forming a single belt shape light emission region 12A, and two belt shape electrodes (the p-side electrode 15A and a p-side electrode 15B) arranged in a region corresponding to the light emission region 12A. The driving circuit 2 independently supplies a pulse current to each electrode of the semiconductor laser element 1.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够减少斑点噪声的半导体激光装置，并提供一种驱动半导体激光元件的方法。 解决方案：半导体激光器件包括半导体激光元件1和驱动电路2.半导体激光元件1包括用于形成单个带状发光区域12A的激光结构和两个带状电极（p- 侧电极15A和p侧电极15B）配置在与发光区域12A对应的区域中。 驱动电路2独立地向半导体激光元件1的每个电极提供脉冲电流。版权所有：（C）2007，JPO＆INPIT

公开(公告)号：JP2006032407A

公开(公告)日：2006-02-02

申请号：JP2004204686

申请日：2004-07-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01S5/14 ,  H01S5/0683

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus wherein the effect by a returned light can be suppressed. SOLUTION: An external resonator is configured by perpendicularly arranging a glass plate 21 to a light LB emitted from a semiconductor laser element 10 and resonating part of the light LB between the glass plate 21 and an end face 10R of the semiconductor laser element 10 at the opposite side. A distance L between the glass plate 21 and the end face 10R of the semiconductor laser element 10 at the opposite side, that is, the resonator length L of the external resonator is adjusted by moving the glass plate 21 in a direction A in parallel with the light LB on the basis of the stimulation state of the semiconductor laser element 10. The luminous quantity of the light resonated in the external resonator may be adjusted by using a transmissivity control element such as a liquid crystal optical element or a variable ND filter. Or the phase of the light resonated in the external resonator may be adjusted by a phase compensation plate. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供可以抑制由返回光产生的效果的半导体激光装置。 解决方案：外部谐振器通过将玻璃板21垂直布置到从半导体激光元件10发射的光LB上并使玻璃板21和半导体激光元件的端面10R之间的一部分LB谐振的外部谐振器 10在对面。 玻璃板21与相对侧的半导体激光元件10的端面10R之间的距离L，即外部谐振器的谐振器长度L，通过使玻璃板21沿与方向A平行的方向A移动来调节 基于半导体激光元件10的刺激状态的光LB。可以通过使用诸如液晶光学元件或可变ND滤光器的透射率控制元件来调节在外部谐振器中谐振的光的发光量。 或者可以通过相位补偿板来调整在外部谐振器中谐振的光的相位。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005064353A

公开(公告)日：2005-03-10

申请号：JP2003294889

申请日：2003-08-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01L21/22 ,  H01L21/265 ,  H01S5/02 ,  H01S5/20

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element wherein an accurate refractive index distribution is formed in a semiconductor layer with a simple step.
SOLUTION: An impurity region 30 containing impurities for adjustment of refractive index is formed by heat diffusion in a semiconductor layer 20. The impurity region 30 is selectively irradiated with a laser beam LB to cause a heat distribution 40 in the semiconductor layer 20. The refractive index adjusting impurities are relocated with a concentration distribution corresponding to the heat distribution 40 to provide a refractive index distribution to an end face of a light emission region 21A. A desired refractive index distribution is easily realized according to the type and quantity of the refractive index adjusting impurities and the irradiation conditions of the laser beam LB. The refractive index distribution may be provided by implanting ions from a front end face into the semiconductor layer 20 and selectively heat treating the layer to cause a heat distribution, and by restoring the crystallization of the end face of the light emission region 21A according to the heat distribution.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种制造半导体发光元件的方法，其中以简单的步骤在半导体层中形成精确的折射率分布。 解决方案：在半导体层20中通过热扩散形成含有用于调节折射率的杂质的杂质区30.通过激光束LB选择性地照射杂质区域30，以在半导体层20中产生热分布40 折射率调节杂质以与热分布40对应的浓度分布重新定位，以向发光区域21A的端面提供折射率分布。 根据折射率调节杂质的种类和数量以及激光束LB的照射条件，容易实现所需的折射率分布。 折射率分布可以通过将离子从前端面注入到半导体层20中并且选择性地热处理该层以引起热分布，并且通过根据该方法恢复发光区域21A的端面的结晶来提供 热分布。 版权所有（C）2005，JPO＆NCIPI