公开(公告)号：JP2010040925A

公开(公告)日：2010-02-18

申请号：JP2008204402

申请日：2008-08-07

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  NAKAJIMA HIROSHI ,  ASAZUMA YASUNORI ,  TASAI KUNIHIKO ,  NAKAMURA HITOSHI

IPC: H01S5/327

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting element having high internal quantum efficiency and superior reliability.
SOLUTION: The light-emitting element has an electron barrier layer 16 between an active layer 15 made of ZnSeTe or BeZnSeTe and a second guide layer 17 made of an MgSe/BeZnSeTe superlattice. The electron barrier layer 16 includes an MgBeZnSeTe single layer or the MgSe/BeZnTe superlattice, and has a composition ratio, where the lower end of the conductor of the electron barrier layer 16 becomes a level higher than that of the lower end of the conduction band of the active layer 15.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有高的内部量子效率和优异的可靠性的发光元件。 解决方案：发光元件在由ZnSeTe或BeZnSeTe制成的有源层15和由MgSe / BeZnSeTe超晶格制成的第二引导层17之间具有电子势垒层16。 电子势垒层16包括MgBeZnSeTe单层或MgSe / BeZnTe超晶格，并且具有组成比，其中电子势垒层16的导体的下端变得高于导带的下端的电平 的活跃层15.版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007251092A

公开(公告)日：2007-09-27

申请号：JP2006076275

申请日：2006-03-20

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  ASAZUMA YASUNORI ,  NAKAMURA HITOSHI

IPC: H01S5/327

CPC classification number: H01S5/327 ,  H01S5/3018 ,  H01S5/3216

Abstract: PROBLEM TO BE SOLVED: To provide a highly practical semiconductor laser which emits light from yellow to green which enables the structure crystal of a laser structure manufactured readily at high quality by providing the laser structure which can obtain room-temperature continuous oscillation while keeping high reliability.
SOLUTION: The structure has an n-type clad layer, an optical guide layer, an active layer, an optical guide layer and a p-type clad layer on an InP substrate. The active layer has a layer constituted of a II-VI compound semiconductor mixed crystal comprising Be. At least one layer of the n-type clad layer, the optical guide layer and the p-type clad layer has a layer constituted of the same element as the II-VI compound semiconductor mixed crystal comprising Be of the active layer. The layer is constituted of a superlattice structure whose well layer is a mixed crystal of a composition of Be whose composition variation is within ±30% when compared to the composition of Be of the II-VI compound semiconductor mixed crystal of the active layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种高效实用的半导体激光器，其发射从黄色到绿色的光，通过提供能够获得室温连续振荡的激光结构，能够以高质量容易地制造激光结构的结构晶体，同时 保持高可靠性。 解决方案：该结构在InP衬底上具有n型覆盖层，光导层，有源层，导光层和p型覆盖层。 有源层具有由包含Be的II-VI化合物半导体混合晶体构成的层。 n型覆盖层，导光层和p型覆盖层的至少一层具有由与活性层的Be构成的II-VI族化合物半导体混合晶体相同的元素构成的层。 该层由超级晶格结构构成，其阱层是与有源层的II-VI族化合物半导体混晶的Be的组成相比，其组成变化在±30％以内的组成为Be的混合晶体。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006229241A

公开(公告)日：2006-08-31

申请号：JP2006063811

申请日：2006-03-09

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWAI HIROHARU ,  IKEDA MASAO ,  NAKAMURA FUMIHIKO ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI

IPC: H01L33/32 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To prevent deterioration of a nitride-based group III-V compound semiconductor layer, containing In and to improve the quality of the nitride-based group III-V compound semiconductor layer that does not contain In, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown on the nitride-based group III-V compound semiconductor layer containing In, such as GaInN layer at a higher growth temperature than that of the latter layer. SOLUTION: A protective film composed of AlGaN is grown on the nitride-based group III-V compound semiconductor layer, containing In at a growth temperature almost equal to or lower than that of the semiconductor layer thereof, and the nitride-based III-V compound semiconductor layer that does not contain In is grown thereon. Here, N 2 is used as the carrier gas, when the nitride-based group III-V compound semiconductor layer containing In and the protecting film are grown, and a mixed gas of H 2 and N 2 is used for the carrier gas, when the nitride-based group III-V compound semiconductor layer that does not contain In is grown. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题为了防止含有In的氮化物基III-V族化合物半导体层的劣化，并且为了提高不含In的氮化物系III-V族化合物半导体层的质量，当 不含In的基于氮化物的III-V族化合物半导体层生长在含In的氮化物基III-V族化合物半导体层上，例如GaInN层，其生长温度高于后一层。 解决方案：在氮化物基III-V族化合物半导体层上生长由AlGaN组成的保护膜，其中In生长温度几乎等于或低于其半导体层的生长温度，并且氮化物基 在其上生长不含In的III-V族化合物半导体层。 这里，使用N 2 作为载气，当含有In和保护膜的氮化物基III-V族化合物半导体层生长时，H 2 < 当不含有In的氮化物基III-V族化合物半导体层生长时，使用SB / N和SBB和N 作为载气。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003332693A

公开(公告)日：2003-11-21

申请号：JP2003158298

申请日：2003-06-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASANO TAKEHARU ,  ASAZUMA YASUNORI ,  HINO TOMOKIMI ,  TOMITANI SHIGETAKA ,  YAMAGUCHI KYOJI ,  KOBAYASHI TAKASHI

IPC: H01L21/205 ,  H01S5/223 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a process for manufacturing a semiconductor laser employing a nitride based III-V compound semiconductor in which the oscillation of a high order mode can be suppressed at a high output by controlling a transverse mode stably while ensuring excellent heat dissipation properties. SOLUTION: In a semiconductor laser employing a nitride based III-V compound semiconductor and having a ridge-like stripe, both sides of the ridge are buried with burying semiconductor layers, e.g. AlGaN burying layers 20, each composed at least partially of a non-single crystal, e.g. polycrystalline, nitride based III-V compound semiconductor. The burying semiconductor layer is grown in temperatures of 520-760°C, for example. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种使用氮化物III-V族化合物半导体制造半导体激光的方法，其中通过稳定地控制横向模式可以在高输出下抑制高阶模式的振荡，同时确保 良好的散热性能。 解决方案：在采用氮化物III-V族化合物半导体并具有脊状条纹的半导体激光器中，脊的两侧被掩埋埋入半导体层，例如， AlGaN掩埋层20，每个至少部分由非单晶构成。 多晶氮化物III-V族化合物半导体。 掩埋半导体层例如在520-760℃的温度下生长。 版权所有（C）2004，JPO

公开(公告)号：JP2003304034A

公开(公告)日：2003-10-24

申请号：JP2002110213

申请日：2002-04-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  NAKAJIMA HIROSHI

IPC: H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01L33/00

CPC classification number: H01S5/34333 ,  H01S2304/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element that is provided with a light emission layer to efficiently emit a light having a wavelength in blue or green color band. SOLUTION: This method is used to manufacture a semiconductor element by a metal organic vapor phase growth method (MOCVD method). For example, the growth step for an GaInN layer when the GaInN layer is grown as an active layer of an LD includes first and second steps. The first step is for the supply of all kinds of material, wherein the temperature of a substrate is set at about 650°C and an ammonium, a Ga material and an In material are respectively supplied to a reaction tube at specified rates, 0.67 μmol/min, 9.06 μmol/min and 11.13 μmol/min for 5 seconds to grow the GaInN layer. Next, in the second step, while an ammonium and a carrier gas are supplied to the reaction tube for two seconds, the supply of the Ga material and In material is interrupted. A cycle of the first step of 5 seconds and the second step of two seconds is repeated until the film thickness reaches a predetermined value. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种制造半导体元件的方法，该半导体元件设置有发光层，以有效地发射具有蓝色或绿色带的波长的光。

解决方案：该方法用于通过金属有机气相生长法（MOCVD法）制造半导体元件。 例如，当GaInN层生长为LD的有源层时，GaInN层的生长步骤包括第一和第二步骤。 第一步是供应各种材料，其中将基板的温度设定在约650℃，并将铵，Ga材料和In材料分别以规定的速率供给到反应管中，0.67μmol / min，9.06μmol/ min和11.13μmol/ min持续5秒以生长GaInN层。 接下来，在第二步骤中，当向反应管供给两秒钟的铵和载气时，Ga材料和In材料的供给被中断。 重复第一步骤5秒和第二步骤2秒的循环，直到膜厚度达到预定值。 版权所有（C）2004，JPO

公开(公告)号：JPH07134357A

公开(公告)日：1995-05-23

申请号：JP27856893

申请日：1993-11-08

Applicant: SONY CORP

Inventor： ASAZUMA YASUNORI ,  UMETSU NOBUHIKO ,  TAKEMOTO SADAHIRO

IPC: G03C1/725 ,  C09K9/00 ,  G11B7/24 ,  G11B7/244

Abstract: PURPOSE:To form effective traps in a photochromic material go that the density and energy levels can be arbitrarily controlled by artificially adding materials having different crystalline structures, lattice constants and energy band levels. CONSTITUTION:This photochromic material has a photochromic layer 3 having such a structure that each one or more layers of at least first material layers and second material layers are laminated on a substrate 11. At least one of these materials contain a material showing photochromism. On the interface of the material layers, 1 and 2, an irregular structure is produced due to lattice defects due to the structure and size (lattice const.) of the crystal or molecules of in the layers 1 and 2, due to intrusion of atoms or ions to among the lattice points, or due to strain of the lattice or molecules. This structure can be used as a trap for electrons in the photochromic reaction. Thereby, by selecting materials and thickness, the crystalline structure and lattice const. can be artificially controlled so that trapping in photochromic layer 3 can be controlled.

公开(公告)号：JPH07129963A

公开(公告)日：1995-05-19

申请号：JP27856793

申请日：1993-11-08

Applicant: SONY CORP

Inventor： UMETSU NOBUHIKO ,  TAKEMOTO SADAHIRO ,  ASAZUMA YASUNORI

IPC: G11B7/00 ,  G11B7/005 ,  G11B7/14

Abstract: PURPOSE:To dissolve the problem of the time deviation between a reproducing beam and light emission detection and the problem of reproducing resolution by bisecting the light emission from a recording medium by the excitation by a reproducing wavelength beam with a diffraction grating and detecting them with plural photodetectors. CONSTITUTION:A reproducing beam irradiates a prescribed position on the recording medium 1. A light emission beam, that is, the beam to be detected distributed over a prescribed wavelength area emitted by excitation with the irradiation of the reproducing beam goes to a beam splitter or a wavelength selection mirror 14 through an objective lens 15, and thus, is branched from an optical path from a light source 11, and e.g. goes straight on, and is converged on an aperture 4 of a light shielding body 16 by a condenser lens 25 to be sent to the diffraction grating 2 through a collimeter lens 17 through the aperture 4. Thus, the beam to be detected is light divided according to the wavelength area, e.g. wavelengths of lambda1-lambdan of the beam to be detected, that is, the light emission from the recording medium 1, and go to positions different from each other respectively according to wavelengths through the condenser lens 35, and are received by respective corresponding photodetectors 3 beforehand arranged on these positions different from each other to be detected.

公开(公告)号：JP2009032817A

公开(公告)日：2009-02-12

申请号：JP2007193794

申请日：2007-07-25

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  NAKAMURA HITOSHI ,  ASAZUMA YASUNORI ,  TASAI KUNIHIKO ,  TAMAMURA KOJI

IPC: H01S5/02

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress the reductions of its electric characteristics and the regularity and stability of its crystal structure by the diffusion of impurities. SOLUTION: In the semiconductor device, a buffer layer 11, a lower cladding layer 12, a lower guiding layer 13, an active layer 14, an upper guiding layer 15, an upper cladding layer 16, and a contact layer 17 are laminated on a substrate 10 in this order. Further, by using as a set a lamination structure constituted by laminating a diffusion suppressing layer 16A, a first upper cladding layer 16B, a diffusion suppressing layer 16C, and a second upper cladding layer 16D from the side of the substrate 10 in this order, the upper cladding layer 16 is so formed as to laminate a plural sets of lamination structures. Moreover, the diffusion suppressing layers 16A, 16C include as their main components compound semiconductors of groups II-VI wherefrom Mg, Te are excluded. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种可以通过杂质扩散来抑制其电特性的降低及其晶体结构的规律性和稳定性的半导体器件。 解决方案：在半导体器件中，缓冲层11，下包层12，下引导层13，有源层14，上引导层15，上覆层16和接触层17是 层叠在基板10上。 此外，通过按照该顺序从基板10一侧层叠扩散抑制层16A，第一上包层16B，扩散抑制层16C和第二上覆层16D构成的层叠结构， 上包层16形成为层叠多组层叠结构。 此外，扩散抑制层16A，16C包括作为其主要组分的组II-VI的化合物半导体，其中不包括Mg，Te。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008300754A

公开(公告)日：2008-12-11

申请号：JP2007147577

申请日：2007-06-04

Applicant: Hitachi Ltd ,  Sony Corp ,  Sophia School Corp ,  ソニー株式会社 ,  学校法人上智学院 ,  株式会社日立製作所

Inventor： KISHINO KATSUMI ,  NOMURA ICHIRO ,  TAMAMURA KOJI ,  TASAI KUNIHIKO ,  ASAZUMA YASUNORI ,  NAKAMURA HITOSHI ,  FUJISAKI SUMIKO ,  KIKAWA TAKESHI

IPC: H01S5/347 ,  B82Y20/00

CPC classification number: H01S5/347 ,  B82Y20/00 ,  H01L21/02392 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/02579 ,  H01L33/28 ,  H01S5/3059

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor element with high reliability, a long life, and excellent light-emitting characteristics by using another material in a p-type clad layer.
SOLUTION: A buffer layer 11, a lower clad layer 12, a lower guide layer 13, an active layer 14, an upper guide layer 15, an upper clad layer 16, and a contact layer 17 are provided in this order on a surface of a substrate 10 made of InP. The upper clad layer 16 has a laminated structure formed by alternately stacking a first upper clad layer 16A mainly composed of Be
x1 Mg
x2 Zn
x3 Te (0 x4 Mg
x5 Zn
x6 Te (0

Abstract translation: 要解决的问题：通过在p型覆盖层中使用另一种材料来提供具有高可靠性，长寿命和优异的发光特性的半导体元件。 解决方案：依次提供缓冲层11，下包层12，下引导层13，有源层14，上引导层15，上覆层16和接触层17 由InP制成的基板10的表面。 上部包层16具有层叠结构，该层叠结构通过交替层叠主要由以下组成的第一上部包层16A，即由第一上部包层16A和/ （0 x4 Mg （0

公开(公告)号：JP2006303195A

公开(公告)日：2006-11-02

申请号：JP2005122973

申请日：2005-04-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI

IPC: H01S5/022

Abstract: PROBLEM TO BE SOLVED: To provide a low-cost laser module capable of reducing the influence of return light.
SOLUTION: A polarization beam splitter 5 for transmitting a polarized light component, having a specific plane of polarization out of beams exiting from a semiconductor laser 2, is arranged in an optical path L between the semiconductor laser 2 and an optical fiber 3. The light, reflected on the exit end 3b of the optical fiber 3 and light, reflected on a target 9 to be irradiated are turned into a return light N that is propagated through the optical fiber 3. The plane of polarization of the return light N is not maintained due to the propagation through the optical fiber 3, and light components having planes of polarization in various directions are mixed. Consequently, the return light N, having a plane of polarization different from that of laser light S made to exit from the semiconductor laser 2, is reflected at the reflection surface 5a of the polarization beam splitter 5 and will not reach the semiconductor laser 2.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够减少返回光的影响的低成本激光模块。 解决方案：在半导体激光器2和光纤3之间的光路L中配置用于透射从半导体激光器2射出的光束具有特定偏振面的偏振光分量的偏振光束分离器5 在光纤3的出射端3b上反射的光和被照射的目标物9上被反射的光变成通过光纤3传播的返回光N.返回光的偏振面 N由于通过光纤3的传播而不被维持，并且在各个方向上具有偏振面的光分量混合。 因此，具有与从半导体激光器2出射的激光的偏振面不同的返回光N在偏振光分束器5的反射面5a处反射，并且不会到达半导体激光器2。 版权所有（C）2007，JPO＆INPIT