公开(公告)号：JP2004342960A

公开(公告)日：2004-12-02

申请号：JP2003140026

申请日：2003-05-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/76 ,  H01L21/316 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device provided with grooved element separation capable of easing the compression stress of a buried insulating film independently of the aperture width of the groove and having uniform and effective element performance, and to provide a method for manufacturing the semiconductor device.
SOLUTION: The semiconductor device is provided with a semiconductor substrate 3 having grooves 5 on the surface side, insulating films 7 filled in the grooves 5, and contraction films 9 formed on the inwalls of the grooves 5 in a state that tensile stress is applied between the inwall of the groove 5 and the insulating film 7.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2000106364A

公开(公告)日：2000-04-11

申请号：JP27449898

申请日：1998-09-29

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To form a silicon based insulating film excellent in adhesion to an organic insulating film through active dangling bond incident to Si-H bond. SOLUTION: When a silicon based insulating film 16 comprising a silicon oxide film, a silicon oxide nitride film or a silicon nitride film is formed on the surface of an organic insulating film 15, it is formed such that an Si-H bond is formed on the interface between the silicon based insulating film 16 and the organic insulating film 15. When the organic insulating film 15 is formed of a fluororesin film, bond with carbon on the surface of the fluororesin may be reduced by applying a physical impact thereto before forming the silicon based insulating film 16 or a silane coupling agent may be applied.

公开(公告)号：JPH11307633A

公开(公告)日：1999-11-05

申请号：JP10998398

申请日：1998-04-20

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI ,  NAKAYAMA SO

IPC: C08G73/10 ,  C08F214/18 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/367 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To substantially suppress the increase in interconnection capacity by forming, in a dielectric film having a specific permittivity of a specified value or below, an interconnection layer so that the upper face of it may be higher than that of the dielectric film. SOLUTION: On a semiconductor substrate 1, the source region and the drain region are formed in an isolation region constituted of a silicon oxide film 2, and then a gate electrode 4 made of polysilicon is formed at the center of the substrate 1 through a gate oxide film 3. On the gate electrode 4, an interlayer insulating film 5 constituted of a low permittivity film having a value of 3.0 or below for the specific permittivity is formed. Then, in the interlayer insulating film, an aluminum interconnection layer 6 is formed. At that time, the upper layer of the interconnection layer 6 is made a slightly higher than that of the interlayer insulating film 5 for the purpose of removing an oxide film. As a result of this method, the increase in the interconnection capacity can be substantially suppressed.

公开(公告)号：JPH1187342A

公开(公告)日：1999-03-30

申请号：JP28478197

申请日：1997-10-17

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L23/522 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To prevent the roughing of the surface of a film by making a low dielectric constant organic film which is hardly oxided by forming silicon- insulating film in a deoxidizing atmosphere and to prevent the peeling off of the silicon oxide film. SOLUTION: In forming an inter-layer dielectric comprising a silicon insulating film (an oxide silicon film 16) by chemical vapor phase epitaxy on a low dielectric constant organic film formed on a substrate 10, the atmosphere of the chemical vapor phase epitaxy is converted into the deoxidizing atmosphere, the temperature of the film surface is set to a temperature higher than the temperature at which the silicon oxide film grows and not more than 350 deg.C, the silane gas is used as a material gas supplied to the atmosphere of the chemical vapor epitaxy and dinitrogen monoxide is used for oxidizing the silane gas.

公开(公告)号：JPH118237A

公开(公告)日：1999-01-12

申请号：JP15706997

申请日：1997-06-13

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a low permittivity insulating film and a semiconductor device using the same, which has superior capabilities for gap filling and global leveling, and has fine bubbles inside the film. SOLUTION: A film is formed by providing starting gases, such as a silane compound, an oxidant, phenol, a benzonic acid or the like, in accordance with a liquid-phase CVD method, followed by heat treatment to form a low permittivity insulating film 14. Thus, phenol benzonic acid or the like is taken into the film leveled by the liquid-phase CVD method, which is then evaporated by heat treatment to form bubbles with size in the order of nm inside the film. Consequently, there is formed a low permittivity insulating film having a relative permittivity of 3.0 or below.

公开(公告)号：JPH118236A

公开(公告)日：1999-01-12

申请号：JP15703197

申请日：1997-06-13

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/316

Abstract: PROBLEM TO BE SOLVED: To form a low dielectric constant film having a low relative dielectric constant by a method, wherein a vapor growth operation is conducted using a raw gas containing a specific component, and the vapor growth dielectric film is heat treated. SOLUTION: A raw gas, formed by mixing silicon atom containing gas, oxygen atom containing gas and diluted gas, is introduced into a chamber, and a protective film is formed on a semiconductor substrate 2. Then, a low dielectric constant film is formed on the semiconductor substrate 2. Silicon atom containing gas, silicon-oxidizing gas and organic molecule containing gas are introduced through different feeding paths, and they are fed into the chamber via a diffusion plate 16. Sin H2n+2 and H2 O2 are introduced and mixed, and a silanol is formed, (Cn H2n+1 O)NH is mixed while proceeding with dehydration-condensation into the silanol, where x+y=3 and x>=1. Then the semiconductor substrate 2 is heat treated. As a result, a low dielectric constant film, having a low relative dielectric constant, is obtained.

公开(公告)号：JPH10275804A

公开(公告)日：1998-10-13

申请号：JP8068197

申请日：1997-03-31

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor film, having an interlayer insulating film such that it has a low dielectric constant and a high gap-filling ability, can adhere to an SiO2 film or wiring in a good state, and is not decomposed nor deformed in succeeding treatment processes. SOLUTION: A protective film 14 for protection a base film which protects wiring 13 form an oxidizing gas used at the time of forming first lower and upper-layer films 15 and 16, composed of organic silane-based silicon oxide films and the first lower and upper-layer films 15 and 16 are formed below an organic film 17, which is formed as an interlayer insulating film and has a low dielectric constant. Second lower- and upper-layer films 18 and 19, which are composed of organic silane-based silicon oxide films and protect the organic film 17 from an oxidizing gas used at the time of forming a CVD oxide film 20 which becomes the substrate of upper-layer wiring 23 are formed on the organic film 17. Then, after the film 19 is formed, the CVD oxide film 20 is formed on the film 19. Therefore, a highly integrated semiconductor device, which can operate at a high speed and of low power consumption can be manufactured.

公开(公告)号：JPH10125783A

公开(公告)日：1998-05-15

申请号：JP29338096

申请日：1996-10-15

Applicant: SONY CORP

Inventor： TAGUCHI MITSURU ,  HASEGAWA TOSHIAKI

IPC: H01L23/522 ,  H01L21/304 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To form a buried wiring in an interlayer insulating film made of organic material without breaking the interlayer insulating film. SOLUTION: An interlayer insulating film 4 made of low dielectric constant organic material such as fluorocarbon polymer, polyarylfluoride ether, polyimide fluoride, polyparaxylene, etc., is formed so as to cover a lower layer Al alloy wiring 3 which is formed on an Si substrate 1 with an interlayer insulating film 2 therebetween. After a contact hole 5 and a wiring groove 6 are formed in the interlayer insulating film 4, a TiN/Ti film 7 and an upper layer Al alloy film 8 are successively formed over the whole surface of the Si substrate 1. Then the upper layer Al alloy film 8 is made to reflow by a high pressure reflow method at, for instance, 420 deg.C to fill the contact hole 5 and the wiring groove 6. After that, the unnecessary TiN/Ti film 7 and upper layer Al alloy film 8 on the parts other than the contact hole 5 and the wiring groove 6 are removed by polishing to form a groove wiring which is buried in the contact hole 5 and the wiring groove 6, and is electrically connected to the lower layer Al alloy wiring 3.

公开(公告)号：JPH1092802A

公开(公告)日：1998-04-10

申请号：JP24755896

申请日：1996-09-19

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To enable forming a dielectric film wherein film quality is excellent and pattern dependence does not exist, and remarkably increasing film formation velocity on the surface of a substrate. SOLUTION: In this manufacturing method, liquid material 51 wherein dielectric material is dissolved in solvent is introduced on the surface of a substrate 10 whose temperature is set to be in a range higher than or equal to the boiling point of the solvent and lower than or equal to the thermal decomposition temperature of the dielectric material, together with vaporized solvent 52 of the same kind. The dielectric material in the liquid material is deposited while the solvent is evaporated on the surface of the substrate 10, and a dielectric film is formed. In this case, the liquid material 51 is introduced on the surface of the substrate 10, in the state that the liquid material 51 is made mist or vaporized.

公开(公告)号：JPH09205088A

公开(公告)日：1997-08-05

申请号：JP1149196

申请日：1996-01-26

Applicant: SONY CORP

Inventor： HASEGAWA TOSHIAKI

IPC: B05D5/12 ,  B05D7/24 ,  C08J7/00 ,  H01L21/31 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To prevent generation of voids at the time of heat treatment for depositing an insulation film. SOLUTION: In the method for depositing an insulation film 2 on the surface of the substrate 1 of a semiconductor device atmospheric pressure is set higher than the bonding force between the substrate 1 and insulation film 2 at the time of heat treating the insulation film 2 deposited on the surface of substrate 1. A fluorocarbon film may be employed as the insulation film 2, for example, and heat treatment is performed in an inert gas atmosphere in that case. The heat treatment is performed by increasing the treating temperature to a specified level, keeping the specified temperature level and then lowering the temperature. The specified temperature is set higher than the glass transition point of fluorocarbon film and lower than the thermal decomposition temperature thereof.