Abstract:
PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor light emitting device manufactured by a simple manufacturing process. SOLUTION: The semiconductor light emitting device 10 comprises an n-type semiconductor 12, an active layer 13, and a p-type semiconductor 14 while the active layer 13 is constituted so as to be pinched between the n-type semiconductor 12 and the p-type semiconductor 14. Emission center ion 18 and a quantum dot 19 are contained in the active layer 13 and when a voltage is impressed on the semiconductor light emitting device 10 through ohmic electrodes (11, 15), energy is moved to the emission center ion 18 by FRET to excite the emission center ion 18. Thereafter, the energy level of the emission center ion 18 is changed to an emission level and, further, is changed to a normal energy level. In this case, the emission center ion 18 emits light of a predetermined visible wavelength. The emission center ion 18 is selected from rare earth metallic ion, transition metallic ion or the like so as to emit the light of such a visible wavelength. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a high brightness, high-resolution, low power consumption, compact, and light display device. SOLUTION: The fluorescent surface of a display device is formed by arranging a fluorescent body, consisting of the fine particle of a crystal with a diameter that is four times larger than an excition Bohr radius or less. For example, a stripe-shaped red fluorescent body 8, a green fluorescent body 9, and a blue fluorescent body 10 which extend in the direction in which orthogonally crosses a horizontal scanning direction are formed on the surface of a transparent substrate 11. The fluorescent surface is scanned in a horizontal scanning direction with a laser beam 2 of ultraviolet rays from a GaN laser diode, and the red fluorescent body 8, the green fluorescent body 9, and the blue fluorescent body 10 are excited for emitting red, green, and blue colors, thus performing color display.
Abstract:
PROBLEM TO BE SOLVED: To record data on the two recording layers of a recording medium with one time of recording operation. SOLUTION: This recording medium 1 has a laminated structure comprising a transparent substrate 11, a transparent dielectric layer A12, the optical recording layer A13 formed of a magneto-optical recording material, a transparent dielectric layer B14, the optical recording layer B15 formed of a chalcogenide compd., a transparent dielectric layer C16, a high-reflectivity layer 17 formed of aluminum, etc., and a protective film 18. The high-reflectivity layer 17 formed of a material having high thermal conductivity rapidly cools the optical recording layer A13 heated up to a Curie temp. at the time of data recording, by which the magnetic domains corresponding to the data are formed with good shapes on the optical recording layer A13 and, therefore, the simultaneous recording of the data on the optical recording layer A13 and the optical recording layer A15 is possible.
Abstract:
PURPOSE: To produce an information recording medium (e.g. an optical disk) ensuring a satisfactory transferred state of a recording face even in the case of a narrowed track pitch, well adaptable to high density recording and facilitating reproduction. CONSTITUTION: The molding face of a stamper 12 as a molding tool is transferred to a resin as a molding material to form the recording face 3 of an information recording medium, e.g. an optical disk 1. At this time, the molding tool is kept at a temp. between (Tg--25 deg.C) and Tg (Tg is the glass transition temp. of the molding material).
Abstract:
PURPOSE:To form microrecording pits always to a prescribed size and shape without affecting the regions where the temp. rises to the magnetic field inversion temp. or above within a laser spot by the fluctuation in laser power and light emission time, etc., at every formation of the recording pits. CONSTITUTION:The microrecording pits are formed by irradiation with a laser beam at the low laser power simultaneously with impression of an external magnetic field. A dielectric substance layer 2 of the magneto-optical recording medium for which an MSR technique is applied is formed at such a film thickness at which RXthetak is maximized within a >=1/4.lambda/n and
Abstract:
PURPOSE:To simplify configulation by introducing overwritable recording mode without passing a process to erase previous recording to evade erasing time and by making common configuration of initialized magnet field in the time of recording and reproducing. CONSTITUTION:The dielectric film 7 formed by SiN executes protection and Kerr-enhancement of the mulitilayer magnetic film 4. The protective film 8 is also formed by SiN. Each of the magnetic film 4 is formed by transition enriched or rare earth metal enriched rare earth-transition metal. In the case of rare earth metal enriched rare earth-transition metal, the magnetic film 4 has compensation temp. equal to below working temp., that is, has the composition more enriched in rare earth metal than the composition having sufficiently lower compensation temp. than room temp. and is a perpendicular magnetized film which does not have compensation temp. in working temp. And recording to the magneto-optical recording medium 5 is overwritable binarized optical intensity modulation recording, that is, is possible to newly rewrite recording information by binary spot heating regardless of presence or not of information recording bit previously recorded.
Abstract:
PURPOSE:To obtain a producing method of a magneto-optical recording medium for high density recording. CONSTITUTION:In a producing method of a high density magneto-optical recording medium 10 having at least a reproducing layer 11 and a recording layer 13 and reading out a recorded signal while changing magnetization condition of the reproducing layer 11, the reproducing layer 11 is formed on a substrate 21, another recorded body 30 highly densely recorded in advance is closely adhered on the reproducing layer 11 to transfer a magnetic recording on the high density recording body 30 to the reproducing layer 11 and to form a high density recording magnetic pattern, and, afterward, with forming a film of recording layer 13, magnetic pattern generates on the recording layer 13 at the same time.
Abstract:
PROBLEM TO BE SOLVED: To preferably perform biometric authentication via human body communication while maintaining security and usability of biological information.SOLUTION: A communication system 10 is made by a combination of a transmitter 20 and a receiver 30, and performs human body communication via a human body of a person to be authenticated. The transmitter 20 is a device carried by the person to be authenticated such as a cellular phone and an ID card (staff identity card), and receives already-known biological information. The receiver 30 is a reader that reads out data from the ID card or the like, and receives the already-known biological information from the transmitter 20 via the human body communication and at the same time, acquires the biological information of the person.
Abstract:
PROBLEM TO BE SOLVED: To provide a fluorescence lifetime measuring device, a fluorescence lifetime measuring method and a program for acquiring a fluorescence lifetime by a simple constitution. SOLUTION: A stage arranged with a phosphor which is a measuring object is moved, and the phosphor arranged on the stage is irradiated with excitation light and moved at fixed speed, and afterglow of fluorescence emitted by the excitation light is imaged. An elapsed time and afterglow intensity from a fluorescence position at a target afterglow position are detected by using the imaged image, and the fluorescence lifetime is calculated. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide laser treatment equipment capable of being properly used for an annealing treatment for a semiconductor thin-film in which a thermal load on a substrate is inhibited at a small value. SOLUTION: The laser treatment equipment has a stage 1 loading the substrate W to be treated, a light source 3 composed of a semiconductor laser oscillator and a beam shaping section 5 shaping the beam diameter of laser beams Lh oscillated from the light source 3. The laser treatment equipment further has a scanner 7 irradiating the substrate W placed on the stage with laser beams Lh while scanning laser beams Lh shaped by the beam shaping section 5 in the specified direction. COPYRIGHT: (C)2006,JPO&NCIPI