公开(公告)号：JPH09181051A

公开(公告)日：1997-07-11

申请号：JP35161495

申请日：1995-12-26

Applicant: SONY CORP

Inventor： TOMIOKA SATOSHI

IPC: H01L21/302 ,  H01L21/3065 ,  H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To form a pattern having approx. vertical end faces at low cost and high accuracy, without using a complicated process. SOLUTION: An Si3 N4 etching stop layer 3, an SiO2 spacer layer 4 and an Si3 N4 edge forming layer 5 are formed on an Si type film 2 to be etched. Using a resist pattern 6 as a mask, the layers 5 and 4 are dry etched to form openings 7. The layer 4 is side etched to form edges 5a at the layer 5. A metal is vacuum evaporated from a direction normal to the surface of a substrate to form a metal film 8 on the stop layer 3 at parts of the openings 7. After removing the layers 4 and 5, the layer 3 and film 2 are dry etched to pattern the film 2, using the metal film 8 as a mask.

公开(公告)号：JPH07147237A

公开(公告)日：1995-06-06

申请号：JP31738393

申请日：1993-11-24

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  YAN RUBEREGO ,  TOMIOKA SATOSHI

IPC: H01L21/205

Abstract: PURPOSE:To provide an MOCVD method on the basis of selection growth technique capable of arbitrarily controlling the growth of a compound semiconductor crystal layer in the direction horizontal to or vertical to a substrate, without changing the substrate heating temperature. CONSTITUTION:The MOCVD method is a method for growing a compound semiconductor layer 20 which has a (01, -1) face in the horizontal direction of a substrate and a (111) face in the vertical direction of the substrate, on the (111) B face of a substrate 10 composed of GaAs, and contains at least Ga element and As element. In the case of growth of the compound semiconductor crystal layer in the direction vertical to the substrate, trimethyl gallium is used as Ga material gas. In the case of growth of the compound semiconductor crystal layer in the direction horizontal to the substrate, trimethyl gallium is used as the Ga material gas, and trimethyl arsenic is used as As material gas. The partial pressure ratio of As material gas/Ga material gas is set higher than or equal to 100.