公开(公告)号：JP2000273663A

公开(公告)日：2000-10-03

申请号：JP2000003568

申请日：2000-01-12

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  SARARA KENICHI

IPC: B08B3/08 ,  C11D7/34 ,  C23F11/04 ,  C23F11/06 ,  C23F11/16 ,  C23G1/06 ,  C23G1/18 ,  C23G5/032 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a corrosion preventive for metal small in the fear of giving harmful influence on the helth of man and an ecosystem through water environments compared to the conventional case and to provide a cleaning soln. suitable for the cleaning of a semiconductor device consisting essentially of the corrosion preventive. SOLUTION: This corrosion preventive for metal is the one contg. an aliphatic alcohol compd. which is a compd. contg. at least one mercapto in a molecule, in which the number of carbon composing the compd. is >=2, and carbon to which the mercapto group is bonded and carbon to which a hydroxyl group is bonded are adjacently bonded. The cleaning soln. is the one contg. the above corrosion preventive. As to the method for cleaning a semiconductor device, a semiconductor device is cleaned with the above cleaning soln.

公开(公告)号：JPH11162910A

公开(公告)日：1999-06-18

申请号：JP32290497

申请日：1997-11-25

Applicant: SUMITOMO CHEMICAL CO

Inventor： TAKASHIMA MASAYUKI ,  SUKUMODA ATSUSHI ,  SARARA KENICHI

IPC: B24B37/00 ,  C08J5/14 ,  C09G1/02 ,  C09K3/14 ,  C23F3/00 ,  H01L21/304 ,  H01L21/321

Abstract: PROBLEM TO BE SOLVED: To eliminate a process of dispersing abrasive particles in water, by providing an abrasive containing a complexing agent, which reacts to a metal forming a metallic film and forms a water soluble metallic complex, and a water emulsion, which contains vinyl compound polymeric resin particles obtained by emulsion polymerization. SOLUTION: An abrasive for manufacturing a semiconductor device contains a complexing agent which reacts to a metal forming a metallic film and forms a water soluble metallic complex, and a water emulsion which contains vinyl compound polymeric resin particles obtained by emulsion polymerization. As the complexing agent, ammonium fluoride, acetylacetone, citric acid, tartaric acid, etc., are used. As the vinyl compound of the vinyl compound polymeric resin particles, for example, aromatic vinyl compounds such as styrene and vinyl toluene, conjugated diene compounds such as butadiene and isoprene, vinyl halide such as vinyl chloride and vinylidene chloride, vinyl ester such as vinyl acetate and vinyl propionate and the like are used.

公开(公告)号：JPH11121412A

公开(公告)日：1999-04-30

申请号：JP28659997

申请日：1997-10-20

Applicant: SUMITOMO CHEMICAL CO

Inventor： SUKUMODA ATSUSHI ,  TAKASHIMA MASAYUKI ,  SARARA KENICHI

IPC: B24B57/02 ,  C08L57/00 ,  C09K3/14 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide an abrasive which causes no aggregation or sedimentation of polishing particles when an oxidizing agent or a chemical reagent is added, and the materiality of which as an abrasive is maintained even when stored for a long time, by preparing the abrasive as an aqueous emulsion which contains vinyl compound polymer resin particles and contains neither an emulsifier nor a dispersant. SOLUTION: An aqueous emulsion containing resin particles of vinyl compound polymer and containing neither of an emulsifier or a dispersant, is used as an abrasive for manufacturing a semiconductor device. In the manufacture of this abrasive, a vinyl compound is subjected to emulsion polymerization using neither an emulsifier nor a dispersant. In the case where the abrasive contains an emulsifier or a dispersant, polishing particles are aggregated as time passes to raise the viscosity of the abrasive, arising a problem of difficulty in uniform polishing. The present abrasive causes no aggregation or sedimentation of the polishing particles when an oxidizing agent or a chemical reagent is added, and the materiality as an abrasive is stably maintained even when stored for a long period of time.

公开(公告)号：JPH04158514A

公开(公告)日：1992-06-01

申请号：JP28515690

申请日：1990-10-22

Applicant: SUMITOMO CHEMICAL CO

Inventor： INOUE HARUO ,  NAKADA TAKASHI ,  TAKASHIMA MASAYUKI

IPC: H01L21/225

Abstract: PURPOSE:To suppress generation of rosettes at the time when impurity diffused layers are formed and thereby form satisfactory diffused layers by putting a silicon semiconductor substrate into a thermal diffusion furnace in which the gas atmosphere is kept oxidative and then by switching the gas atmosphere into an inactive one to diffuse arsenic or antimony in a coating film into the silicon substrate. CONSTITUTION:After a silicon semiconductor substrate is coated with a coating solution resulting from dissolution of a silica film containing arsenic or antimony to form a coating film, the silicon semiconductor substrate is put into a thermal diffusion furnace to keep its gas atmosphere oxidative, which is then switched into an inactive gas atmosphere to diffuse arsenic or antimony in the coating film into the silicon substrate. Diffusion temperature for diffusion using the above-mentioned coating solution is 1000-1500 deg.C, preferably, close to 1250 deg.C. The oxidative gas atmosphere at the beginning of diffusion is a mixture gas of oxygen and an inactive gas. The oxygen concentration is 5-50vol%, preferably, 5-10vol%, and the remaining inactive gas is preferably nitrogen. It is favorable that the time of switching into an inactive gas atmosphere is within 1/2Thr where the total treatment time for diffusion is Thr.

公开(公告)号：JPH03254854A

公开(公告)日：1991-11-13

申请号：JP5051690

申请日：1990-03-01

Applicant: SUMITOMO CHEMICAL CO

Inventor： NAKADA TAKASHI ,  TAKASHIMA MASAYUKI ,  NEZU HIDEAKI ,  MIYAMOTO KATSUYOSHI ,  SUZUKI TSUTOMU

IPC: G03F7/16 ,  B05C11/08 ,  H01L21/027 ,  H01L21/31

Abstract: PURPOSE:To easily prevent the spray of a coating liq. from reattaching by providing above a spinner head a means for preventing the soiling by the spray thereof consisting of a skirt having a diameter not smaller than that of the object to be coated and an opening at the top thereof, a top panel having an opening part and struts. CONSTITUTION:A spinner head 6 for securing the object 5 to be coated thereon is provided in a spinner cup 1 in such a manner as to permit the spinner head to be rotated and a coating liq. to be dropped onto the object 5. Above the spinner head 6, a means for preventing the soiling by the spray of the coating liq. is provided, consisting of a skirt 12 having a diameter not smaller than that of the object 5 and an opening at the top thereof, a top panel 10 having an opening part 9 and struts 11. As a result, a device for preventing the reattachement of the spray can be obtained easily without using any forced exhaust device or spray recovery device.

公开(公告)号：JPH01194980A

公开(公告)日：1989-08-04

申请号：JP1634288

申请日：1988-01-26

Applicant: SUMITOMO CHEMICAL CO

Inventor： INOUE HARUO ,  MURAMATSU KIYOSHI ,  NAKADA TAKASHI ,  KOIKE HIRONOBU ,  TAKASHIMA MASAYUKI

IPC: B05D7/24 ,  B32B27/00 ,  C09D183/00

Abstract: PURPOSE:To obtain a coating film whose surface is densified and which is superior in chemical resistance by irradiating the surface of coating film with active rays to modify it before bridging of organo-polysiloxane in an applied liquid has been perfectly finished and then by baking this coating film at a high temperature. CONSTITUTION:After an application liquid composed of an organo-polysiloxane as a main component is applied to a substrate, a surface of coating film is irradiated with active rays containing ultraviolet rays as a main wavelength component to modify the surface of the coating film. Next, this coating film is baked at 400 deg.C or higher to form the coating film B of good adhesion, flatness and superior in chemical resistance.