公开(公告)号：DE69016283T3

公开(公告)日：1998-04-02

申请号：DE69016283

申请日：1990-07-02

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： HIGAKI KENJIRO ,  HARADA KEIZO ,  MATSUURA TAKASHI ,  OYAMA HITOSHI ,  ITOZAKI HIDEO ,  YAZU SHUJI

IPC: C04B41/50 ,  C04B41/52 ,  C04B41/85 ,  C04B41/89 ,  C30B23/02 ,  H01L39/08 ,  H01L39/12 ,  H01L39/24

公开(公告)号：DE69407495D1

公开(公告)日：1998-02-05

申请号：DE69407495

申请日：1994-06-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  YAMAKAWA AKIRA ,  MIYAKE MASAYA

IPC: C04B35/584 ,  C04B35/599 ,  C04B35/64

公开(公告)号：DE69127719D1

公开(公告)日：1997-10-30

申请号：DE69127719

申请日：1991-05-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  NAKANISHI HIDENORI ,  ITOZAKI HIDEO ,  MATSUURA TAKASHI

IPC: H01L39/24 ,  H01L39/22

Abstract: Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the ivention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400 DEG C during the non-superconducting intermediate thin film layer is deposited.

公开(公告)号：DE69220387D1

公开(公告)日：1997-07-24

申请号：DE69220387

申请日：1992-01-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  TANAKA SABURO ,  ITOZAKI HIDEO

IPC: H01L39/24

Abstract: For manufacturing a superconducting device having a tunnel junction formed of an extremely thin insulator layer sandwiched between a pair of oxide superconductor thin films, a first superconducting layer of oxide superconductor thin film is formed on a substrate, and a MgO thin film is deposited on the first superconducting layer at a substrate temperature of not higher than 200 DEG C. The MgO thin film is heat-treated so that crystallinity of the deposited MgO thin film is improved, and thereafter, a second superconducting layer of oxide superconductor thin film is formed on the MgO thin film.

公开(公告)号：DE69215993D1

公开(公告)日：1997-01-30

申请号：DE69215993

申请日：1992-07-16

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO

IPC: H01L39/24 ,  H01L39/22

公开(公告)号：DE69300940D1

公开(公告)日：1996-01-18

申请号：DE69300940

申请日：1993-05-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  H01L39/24

Abstract: A Josephson junction device comprising a single crystalline substrate (5) including a principal surface, a layer (15) of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film (10) formed on the principal surface of the substrate (5). The oxide superconductor thin film includes a first and a second superconducting portion (1,2) respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion (3) between the first and the second superconducting portions (1,2), which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from that of the first and second superconducting portions, and grain boundaries (31,32) between the first superconducting portion (1) and the junction portion (3) and between the second superconducting portion (2) and the junction portion (3) which constitute one weak link of the Josephson junction.

公开(公告)号：AU643286B2

公开(公告)日：1993-11-11

申请号：AU7805991

申请日：1991-05-30

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： TANAKA SABURO ,  MATSUURA TAKASHI ,  ITOZAKI HIDEO ,  NAKANISHI HIDENORI

IPC: H01L39/24 ,  H01L39/22

Abstract: Improvement in a process for fabricating a superconducting junction by depositing successively a first oxide superconductor thin layer, a non-superconducting intermediate thin film layer and a second oxide superconductor thin film layer on a substrate in this order. In the ivention, the non-superconducting intermediate thin film layer is composed of MgO and the substrate is heated at a temperature between 200 and 400 DEG C during the non-superconducting intermediate thin film layer is deposited.

公开(公告)号：FI916142A

公开(公告)日：1992-06-29

申请号：FI916142

申请日：1991-12-27

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  TANAKA SABURO ,  ITOZAKI HIDEO

IPC: H01L39/22 ,  G01R

公开(公告)号：AU7945391A

公开(公告)日：1992-01-02

申请号：AU7945391

申请日：1991-06-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： MATSUURA TAKASHI ,  HIGAKI KENJIRO ,  ITOZAKI HIDEO

IPC: H01L39/24 ,  H01L39/12

公开(公告)号：CA2044941A1

公开(公告)日：1991-12-21

申请号：CA2044941

申请日：1991-06-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES

Inventor： ITOZAKI HIDEO ,  HATTORI HISAO ,  HARADA KEIZO ,  MATSUURA TAKASHI

IPC: C01B13/14 ,  C01G1/00 ,  C01G3/00 ,  C23C14/34 ,  C23C14/50 ,  C30B23/08 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

Abstract: A process is provided for preparing thin films of a composite oxide superconductor on a plurality of substrates by sputtering, wherein film formation is effected with said plurality of substrates being arranged along a side wall of an imaginary solid that is defined by projecting the effective area of a target surface for film formation in a direction normal to the target surface.