公开(公告)号：US20220406848A1

公开(公告)日：2022-12-22

申请号：US17840213

申请日：2022-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuncheol KIM ,  Yongseok KIM ,  Dongsoo WOO ,  Kyunghwan LEE

IPC: H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  G11C13/00

Abstract: A semiconductor memory device includes a plurality of semiconductor patterns extending in a first horizontal direction and separated from each other in a second horizontal direction and a vertical direction, each semiconductor pattern including a first source/drain area, a channel area, and a second source/drain area arranged in the first horizontal direction; a plurality of gate insulating layers covering upper surfaces or side surfaces of the channel areas; a plurality of word lines on the upper surfaces or the side surfaces of the channel areas; and a plurality of resistive switch units respectively connected to first sidewalls of the semiconductor patterns, extending in the first horizontal direction, and separated from each other in the second horizontal direction and the vertical direction, each resistive switch unit including a first electrode, a second electrode, and a resistive switch material layer between the first and second electrodes and including carbon nanotubes.

公开(公告)号：US20220232439A1

公开(公告)日：2022-07-21

申请号：US17559276

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunghwan LEE ,  Minwhan KIM

IPC: H04W36/00 ,  H04W36/24

Abstract: A method of operating a terminal includes receiving, from a source cell, a radio resource control (RRC) reconfiguration message including a list of a plurality of first objects in a measurement order, reordering the list of the plurality of first objects based on handover information to obtain a reordered list, the handover information corresponding to a connection history of the terminal, sequentially measuring the plurality of first objects based on the reordered list to obtain a measurement result; and transmitting a measurement report to the source cell based on the measurement result.

公开(公告)号：US20210358913A1

公开(公告)日：2021-11-18

申请号：US17092593

申请日：2020-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyuncheol KIM ,  Yongseok KIM ,  Huijung KIM ,  Satoru YAMADA ,  Sungwon YOO ,  Kyunghwan LEE ,  Jaeho HONG

IPC: H01L27/102 ,  H01L29/74

Abstract: A semiconductor device includes a first conductive line and a second conductive line spaced apart from the first conductive line. A semiconductor pattern is disposed between the first conductive line and the second conductive line. The semiconductor pattern includes a first semiconductor pattern having first-conductivity-type impurities disposed adjacent to the first conductive line. A second semiconductor pattern having second-conductivity-type impurities is disposed adjacent to the second conductive line. A third semiconductor pattern is disposed between the first semiconductor pattern and the second semiconductor pattern. The third semiconductor pattern includes a first region disposed adjacent to the first semiconductor pattern and a second region disposed between the first region and the second semiconductor pattern. At least one of the first region and the second region comprises an intrinsic semiconductor layer. A first gate line crosses the first region and a second gate line crosses the second region.