公开(公告)号：US10354837B2

公开(公告)日：2019-07-16

申请号：US15869649

申请日：2018-01-12

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao

IPC: H01J37/32 ,  C23C14/08 ,  C23C4/134 ,  H01L21/3065

Abstract: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from greater than zero to less than or equal to 60%, and F in a range of greater than zero to less than or equal to 75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.

公开(公告)号：US20180138016A1

公开(公告)日：2018-05-17

申请号：US15869649

申请日：2018-01-12

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  C23C4/134 ,  C23C14/08 ,  H01J37/32192 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32559 ,  H01L21/3065

Abstract: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from greater than zero to less than or equal to 60%, and F in a range of greater than zero to less than or equal to 75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.

公开(公告)号：US09941126B2

公开(公告)日：2018-04-10

申请号：US14309090

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01L21/268 ,  H01J37/32

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US09301383B2

公开(公告)日：2016-03-29

申请号：US13829959

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H05H1/46 ,  H01F41/06 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US09111873B2

公开(公告)日：2015-08-18

申请号：US14054902

申请日：2013-10-16

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

Abstract: A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

Abstract translation: 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。

公开(公告)号：US20150126046A1

公开(公告)日：2015-05-07

申请号：US14534870

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  John Entralgo ,  Jianping Zhao ,  Toshihisa Nozawa

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Abstract translation: 公开了一种处理系统，其具有多个功率传输元件，其具有可设置在等离子体处理室周围的内腔。 每个电力传输元件可以传播可用于在等离子体处理室内产生等离子体的电磁能。 功率传输元件可以被设计为适应范围从500W到3500W和0.9GHz到9GHz的一系列功率和频率范围。 在一个实施例中，动力传递元件可以包括能够产生具有两种或更多种模式的驻波的矩形内腔。 在另一个实施例中，动力传递元件可以具有可以沿等离子体处理室放置的圆柱形内部空腔或使气缸的一端靠在等离子体处理室上。

公开(公告)号：US20140262040A1

公开(公告)日：2014-09-18

申请号：US13842965

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Peter L. G. Ventzek ,  Lee Chen ,  Barton Lane ,  Merritt Funk ,  Radha Sundararajan ,  Iwao Toshihiko ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32256

Abstract: A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion.

Abstract translation: 一种配置成与微波处理系统一起使用的等离子体调节杆。 波导包括具有第一外径的第一电介质部分。 具有大于第一外径的第二外径的第二电介质部分围绕第一电介质部分，并且可以与其同轴。 在本发明的一些实施例中，第一电介质部分的介电常数可以等于或大于第二电介质部分的介电常数。

公开(公告)号：US08669705B2

公开(公告)日：2014-03-11

申请号：US13830090

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05B31/26

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有至少一个时隙的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型和第二凹陷构型，其中第一凹槽构型的至少一个第一凹槽的尺寸和/或形状与第二凹部构型的至少一个第二凹部不同。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

公开(公告)号：US20130119854A1

公开(公告)日：2013-05-16

申请号：US13676265

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Lee Chen ,  Peter L.G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J1/00

CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于离RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。

公开(公告)号：US12020902B2

公开(公告)日：2024-06-25

申请号：US17865225

申请日：2022-07-14

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  John Carroll ,  Charles Schlechte ,  Peter Lowell George Ventzek

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32146 ,  H01J37/32541 ,  H01J37/3299 ,  H01J2237/24564

Abstract: A plasma system includes a plasma apparatus including: a plasma chamber; a pedestal configured to hold a substrate in the chamber; and a radio frequency (RF) electrode configured to excite plasma in the chamber; an electromagnetic (EM) circuit block coupled to the RF electrode, the EM circuit block including: a function generator configured to output a broadband RF waveform, the waveform having EM power distributed over a range of frequencies; a broadband amplifier coupled to an output of the function generator, an operating frequency range of the amplifier including the range of frequencies; and a broadband impedance matching network having an input coupled to an output of the broadband amplifier and an output coupled to a terminal of the RF electrode, an operating frequency range of the broadband impedance matching network including the range of frequencies; and a controller configured to adjust an input parameter of the EM circuit block.