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    DRYING RESIST WITH A SOLVENT BATH AND SUPERCRITICAL CO2
    51.
    发明申请
    DRYING RESIST WITH A SOLVENT BATH AND SUPERCRITICAL CO2 审中-公开
    用溶剂浴和超临界二氧化碳干燥

    公开(公告)号：WO2003070846A2

    公开(公告)日：2003-08-28

    申请号：PCT/US2003/004698

    申请日：2003-02-14

    Applicant: SUPERCRITICAL SYSTEMS INC.

    Inventor： ARENA-FOSTER, Chantal, J. ,  AWTREY, Allan, Wendell ,  RYZA, Nicholas, Alan ,  SHILLING, Paul

    IPC: C09F

    CPC classification number: B81C1/00 ,  B81C2201/117 ,  G03F7/40

    Abstract: A method for drying an object, having a polymeric film, wherein the object is submerged in a rinse liquid. The object is removed from the rinse liquid and the object is placed in a solvent bath before a sufficient amount of the rinse liquid can evaporate from the object. The density of a solvent in the solvent bath depends on a direction of orientation of the polymeric film with respect to a force. The object is removed from the solvent bath. A drying process is performed.

    Abstract translation: 一种用于干燥具有聚合物膜的物体的方法，其中物体浸没在漂洗液体中。 将物体从冲洗液体中取出，并且将物体放置在溶剂浴中，在足够量的冲洗液体可以从物体蒸发之前。 溶剂浴中溶剂的密度取决于聚合物膜相对于力的取向方向。 将物体从溶剂浴中取出。 进行干燥处理。

    INTEGRATED MICROMECHANICAL SENSOR DEVICE AND PROCESS FOR PRODUCING IT
    53.
    发明申请
    INTEGRATED MICROMECHANICAL SENSOR DEVICE AND PROCESS FOR PRODUCING IT 审中-公开
    积微机械传感器装置和方法及其

    公开(公告)号：WO1995008775A1

    公开(公告)日：1995-03-30

    申请号：PCT/DE1994001092

    申请日：1994-09-20

    Applicant: SIEMENS AKTIENGESELLSCHAFT ,  WERNER, Wolfgang

    Inventor： SIEMENS AKTIENGESELLSCHAFT

    IPC: G01P15/08

    CPC classification number: B81B3/0013 ,  B81C1/00928 ,  B81C2201/117 ,  G01P15/0802 ,  G01P2015/0814

    Abstract: The integrated micromechanical sensor device contains a body with a substrate (1) on which are arranged an insulating layer (2) and on top of that a monocrystal silicon layer (3), where the silicon layer has cavities extending to the surface of the insulating layer and the walls of the cavities as well as the side of the silicon layer facing the insulating layer have a first doping (n ) and the silicon layer has a second doping (n ) at least over part of its remaining surface, where the silicon layer has a transistor in a first region (TB) and a sensor in a second region (SB), the insulating layer (2) being partially removed under the second region for this purpose. A sensor device of this kind has substantial advantages over known devices in terms of its properties and its production process.

    Abstract translation: 集成微机械Sensorvorrichung包括具有在其上以上的单晶硅层（3）被布置在绝缘层（2）与衬底（1）的主体，其特征在于，所述硅层具有沟槽到所述绝缘层的表面和侧壁 沟槽和绝缘层，面对所述硅层，第一掺杂的侧（N <+>），并至少在其剩余表面的其第二杂质的局部区域中的硅层（n < - >），其中，所述硅层（在第一区域TB ）和一个晶体管装置（在第二区域SB）具有传感器布置，其中所述绝缘层（2）在第二区域中部分地去除。 这样的传感器设备在它们的性质和比已知的装置及其制备工艺方面具有显著优点。

    VERFAHREN ZUR ABSCHEIDUNG EINER ANTI-HAFTUNGSSCHICHT
    54.
    发明申请
    VERFAHREN ZUR ABSCHEIDUNG EINER ANTI-HAFTUNGSSCHICHT 审中-公开
    PROCESS于防责任层的剥离

    公开(公告)号：WO2006015901A1

    公开(公告)日：2006-02-16

    申请号：PCT/EP2005/052862

    申请日：2005-06-21

    Applicant: ROBERT BOSCH GMBH ,  LÄRMER, Franz ,  REICHENBACH, Ralf

    Inventor： LÄRMER, Franz ,  REICHENBACH, Ralf

    IPC: B81B3/00

    CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B81C2201/117

    Abstract: Es wird ein Verfahren zur Abscheidung einer Anti-Haftungsschicht auf eine Oberfläche mikromechanischer Strukturen (5a; 7a) auf einem Substrat (Sub) vorgeschlagen, wobei das abzuscheidende Material oder Precursormaterial in einem Lösungs- und Transportmedium den Strukturen (5a; 7a) zugeführt wird. Als Lösungs- und Transportmedium ist das superkritische CO 2 -Fluid vorgesehen. Die Abscheidung des Materials oder Precursormaterials wird durch eine physikalische Zustandsänderung des CO 2 -Fluids oder durch eine Oberflächenreaktion zwischen der Oberfläche und dem Precursormaterial hervorgerufen. Das Verfahren ermöglicht eine nachträgliche Beschichtung der mikromechanischen Strukturen (5a; 7a) in einer Kaverne (14) oder in einem Hohlraum nach deren Verkappung, wobei das abzuscheidende Material über Zugangskanäle (15) oder Perforationslöcher zugeführt wird.

    Abstract translation: 它是用于沉积抗粘连层的表面微机械结构（5A;图7a）的方法，在基板（子）上提出，其特征在于，在溶剂中的沉积材料或前体材料和输送介质结构（5A;图7a）被提供。 溶剂和传输介质中，超临界CO <子是

    METHOD FOR RELEASING AND DRYING MOVEABLE ELEMENTS OF MICRO-ELECTRONIC MECHANICAL STRUCTURES WITH ORGANIC THIN FILM SACRIFICIAL LAYERS
    55.
    发明申请
    METHOD FOR RELEASING AND DRYING MOVEABLE ELEMENTS OF MICRO-ELECTRONIC MECHANICAL STRUCTURES WITH ORGANIC THIN FILM SACRIFICIAL LAYERS 审中-公开
    微电子机械结构与有机薄膜真空层的移动和干燥方法

    公开(公告)号：WO2004064244A3

    公开(公告)日：2004-11-25

    申请号：PCT/US2004000777

    申请日：2004-01-13

    Applicant: S C FLUIDS INC ,  MOUNT DAVID J

    Inventor： MOUNT DAVID J

    IPC: B08B7/00 ,  B81C1/00 ,  B08B3/00

    CPC classification number: B81C1/00928 ,  B08B7/0021 ,  B81C2201/117

    Abstract: One embodiment of the present invention provides a method for the removal of organic sacrificial layers from a micro-electromechanical structure including the steps of: immersing the structure in at least one bath of at least a first organic solvent, thereby removing substantially all of the organic sacrificial layers; rinsing the structure in a bath of a second organic solvent; transferring the structure to a pressure chamber without substantial evaporation of the second organic solvent wherein the structure is immersed in a second bath of the second organic solvent; closing, pressurizing and filling the pressure chamber with liquid carbon dioxide whereby the second solvent is substantially displaced; heating the liquid carbon dioxide above its critical temperature, thereby permitting the carbon dioxide to undergo a phase change to the supercritical phase; venting the carbon dioxide to the atmosphere.

    Abstract translation: 本发明的一个实施方案提供了一种从微机电结构去除有机牺牲层的方法，包括以下步骤：将结构浸入至少一个至少第一有机溶剂的浴中，从而除去基本上所有的有机溶剂 牺牲层; 在第二有机溶剂的浴中冲洗结构; 将结构转移到压力室，而不会使第二有机溶剂基本蒸发，其中该结构被浸入第二有机溶剂的第二浴中; 用液体二氧化碳关闭，加压和填充压力室，由此第二溶剂基本上位移; 加热液体二氧化碳超过其临界温度，从而使二氧化碳经历相转变为超临界相; 将二氧化碳排放到大气中。

    METHOD FOR RELEASING AND DRYING MOVEABLE ELEMENTS OF MICRO-ELECTRONIC MECHANICAL STRUCTURES WITH ORGANIC THIN FILM SACRIFICIAL LAYERS
    56.
    发明申请
    METHOD FOR RELEASING AND DRYING MOVEABLE ELEMENTS OF MICRO-ELECTRONIC MECHANICAL STRUCTURES WITH ORGANIC THIN FILM SACRIFICIAL LAYERS 审中-公开
    使用有机薄膜牺牲层来释放和干燥微电子机械结构的可移动元件的方法

    公开(公告)号：WO2004064244A2

    公开(公告)日：2004-07-29

    申请号：PCT/US2004/000777

    申请日：2004-01-13

    Applicant: S.C. FLUIDS INC. ,  MOUNT, David, J.

    Inventor： MOUNT, David, J.

    IPC: H03B

    CPC classification number: B81C1/00928 ,  B08B7/0021 ,  B81C2201/117

    Abstract: One embodiment of the present invention provides a method for the removal of organic sacrificial layers from a micro-electromechanical structure including the steps of: immersing the structure in at least one bath of at least a first organic solvent, thereby removing substantially all of the organic sacrificial layers; rinsing the structure in a bath of a second organic solvent; transferring the structure to a pressure chamber without substantial evaporation of the second organic solvent wherein the structure is immersed in a second bath of the second organic solvent; closing, pressurizing and filling the pressure chamber with liquid carbon dioxide whereby the second solvent is substantially displaced; heating the liquid carbon dioxide above its critical temperature, thereby permitting the carbon dioxide to undergo a phase change to the supercritical phase; venting the carbon dioxide to the atmosphere.

    Abstract translation: 本发明的一个实施例提供了一种用于从微机电结构去除有机牺牲层的方法，该方法包括以下步骤：将该结构浸入至少一个至少第一有机溶剂 从而基本上去除了所有的有机牺牲层; 在第二有机溶剂浴中冲洗该结构; 将所述结构转移到压力室而基本不蒸发所述第二有机溶剂，其中所述结构浸没在所述第二有机溶剂的第二浴中; 用液态二氧化碳关闭，加压并填充压力室，由此第二溶剂基本上被置换; 将液态二氧化碳加热至其临界温度以上，从而使二氧化碳经历相变为超临界相; 将二氧化碳排放到大气中。

    구조체의 제작 방법 및 실리콘 산화막 에칭제
    59.
    发明公开
    구조체의 제작 방법 및 실리콘 산화막 에칭제 无效
    生产结构体的方法和氧化硅膜的蚀刻剂

    公开(公告)号：KR1020050063720A

    公开(公告)日：2005-06-28

    申请号：KR1020040109717

    申请日：2004-12-21

    Applicant: 소니 주식회사 ,  미츠비시 가스 가가쿠 가부시키가이샤

    Inventor： 사가코이치로 ,  와타나베히로야 ,  아즈마토모유키

    IPC: H01L21/306 ,  H01L21/304 ,  H01L21/31

    CPC classification number: B81C1/00849 ,  B81C2201/117

    Abstract: 기판 상에 실리콘 산화막으로 이루어진 희생층(sacrificial layer) 및 상기 구조층(structural layer)을 연속적으로 형성하는 막 적층(film-deposition) 단계; 및 처리 유체를 이용한 에칭에 의하여 상기 희생층을 제거하여 상기 기판과 상기 구조층의 사이에 공극부를 형성하는 공극부 형성 단계, 및 세정 단계를 포함하는 방법에 의하여, 기판, 및 상기 기판 상에 공극부를 통하여 형성되고 미소 가동부(micro movable element)로서 기능하는 구조층(structural layer)을 포함하는 구조체를 제작한다. 불소 화합물, 수용성 유기용매 및 물을 함유하는 초임계 이산화탄소 유체를 처리 유체로서 사용함으로써, 구조체의 손상이 없이 소량의 처리 유체를 이용하여 단시간 내에 희생층을 제거한다.

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