-
公开(公告)号：EP3163359A1
公开(公告)日：2017-05-03
申请号：EP14898811.6
申请日：2014-07-31
Applicant: Huawei Technologies Co. Ltd.
Inventor： LI, Yaming , CHENG, Buwen
CPC classification number: G02F1/025 , G02F2001/0157 , G02F2201/063 , H01L27/15
Abstract: An electro-absorption modulator (100) is provided, including: a substrate layer (110), including a silicon substrate (112) and an oxide layer (114) disposed on the silicon substrate; top-layer silicon (120), formed on the oxide layer (114), where a waveguide layer (122) is formed on the top-layer silicon (120); a doping layer, including a first doping panel (132) and a second doping panel (133), where a first-type light doping area (134) is formed on the first doping panel (132), a second-type light doping area (135) is formed on the second doping panel (133), and the first-type light doping area (134), the waveguide layer (122), and the second-type light doping area (135) form a PIN junction; and a modulation layer (140), disposed on the waveguide layer (122) and connected in parallel to the PIN junction. For an incident beam with a specific wavelength, when a modulating electrical signal is reversely applied to the PIN junction, a light absorption coefficient of the modulation layer (140) for the beam changes with the modulating electrical signal, and after the beam passes through a modulation area, optical power of the beam also correspondingly changes, so that electro-optic modulation is implemented for the beam.
Abstract translation: 提供一种电吸收调制器（100），包括：衬底层（110），其包括硅衬底（112）和设置在硅衬底上的氧化物层（114） 形成在所述氧化物层上的顶层硅层，其中在所述顶层硅层上形成有波导层; 包括第一掺杂面板132和第二掺杂面板133的掺杂层，其中在所述第一掺杂面板132上形成第一类型的轻掺杂区域134， （135）形成在所述第二掺杂面板（133）上，所述第一类型轻掺杂区（134），所述波导层（122）和所述第二类型轻掺杂区（135）形成PIN结; 和设置在波导层（122）上并与PIN结并联连接的调制层（140）。 对于具有特定波长的入射光束，当调制电信号反向施加到PIN结时，用于该光束的调制层（140）的光吸收系数随着调制电信号而改变，并且在光束穿过 调制区域，光束的光功率也相应地发生变化，从而对光束进行电光调制。
-
52.发明公开
公开(公告)号：EP2195704A1
公开(公告)日：2010-06-16
申请号：EP08788775.8
申请日：2008-09-10
Applicant: The Centre for Integrated Photonics Limited
Inventor： MOODIE, David, Graham
CPC classification number: G02F1/01708 , B82Y20/00 , G02B6/122 , G02B2006/12078 , G02B2006/12097 , G02B2006/12126 , G02B2006/12142 , G02F1/025 , G02F2001/0157 , G02F2201/063 , G02F2201/066
Abstract: An electroabsorption modulator comprises an absorption layer (7) between at least one layer of p-doped semiconductor (6) and at least one layer of n-doped semiconductor (8). The layers form a ridge waveguide structure. The thickness of the absorption layer is between 9 and 60 nm and the width of the ridge is between 4.5 and 12 microns.
-
公开(公告)号：EP2051138B1
公开(公告)日：2010-06-02
申请号：EP08450160.0
申请日：2008-10-17
Applicant: AIT Austrian Institute of Technology GmbH
Inventor： Pacher, Christoph , Finger, Norman
CPC classification number: G02F1/395 , B82Y10/00 , G02F1/3558 , G02F2001/3548 , G02F2201/063 , G02F2201/18 , G02F2202/20 , G06N99/002 , H04L9/0858
-
54.发明公开
公开(公告)号：EP1705515A3
公开(公告)日：2006-10-18
申请号：EP06014368.2
申请日：2004-01-30
Applicant: FUJITSU LIMITED
Inventor： Sugiyama, Masaki , Nakazawa, Tadao
CPC classification number: G02F1/2255 , G02B6/12007 , G02B6/1228 , G02B6/125 , G02B6/1342 , G02B6/32 , G02B6/322 , G02B6/4206 , G02B6/4214 , G02B2006/12097 , G02B2006/12119 , G02B2006/12142 , G02F2201/063
Abstract: An optical waveguide (1) is formed on a substrate (2) and includes a curved ridge structure (3), a curved optical path, and a buffer layer (4). The curved ridge structure is formed on the substrate so as to have a curvature in a longitudinal direction of the curved ridge structure. The curved optical path is formed along the curved ridge structure. The buffer layer covers a side of the ridge structure and has a lower refractive index than a refractive index of the substrate.
-
">55.发明授权Modulator or switch with vertically-coupled anti-resonant reflecting optical waveguides ("arrow") on silicon 失效调制器或开关与垂直耦合，反谐振反射光波导（“箭头”）硅
公开(公告)号：EP0543369B1
公开(公告)日：1998-01-28
申请号：EP92119714.1
申请日：1992-11-19
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Magel, Gregory A.
CPC classification number: G02F1/011 , G02F1/025 , G02F2001/0152 , G02F2201/063 , G02F2201/302 , G02F2202/101 , G02F2202/105
-
Patent Agency Ranking
公开(公告)号：EP0526023B1
公开(公告)日：1997-12-10
申请号：EP92306352.3
申请日：1992-07-10
Applicant: NEC CORPORATION
Inventor： Komatsu, Keiro
CPC classification number: G02F1/025 , G02B6/131 , G02F1/2257 , G02F1/3133 , G02F2001/0154 , G02F2201/063
-
公开(公告)号：EP0720754B1
公开(公告)日：1997-11-19
申请号：EP93920980.5
申请日：1993-09-21
Applicant: BOOKHAM TECHNOLOGY LIMITED
IPC: G02F1/025
CPC classification number: G02F1/025 , G02F1/3133 , G02F1/3138 , G02F2001/0152 , G02F2201/063 , G02F2202/105
Abstract: The device comprises a layer of silicon (3) separated from a substrate (1) by a layer of insulating material (2). A rib (4) having an upper surface (4A) and two side surfaces (4B, 4C) is formed in the layer of silicon (3) to provide a waveguide for the transmission of optical signals. A lateral doped junction (7, 9, 8) is formed between the side surfaces (4B, 4C) of the rib (4) such that an electrical signal can be applied across the junction (7, 9, 8) to control the density of charge carriers across a substantial part of the cross-sectional area of the rib (4) thereby actively altering the effective refractive index of the waveguide.
-
公开(公告)号：EP0567051B1
公开(公告)日：1996-07-17
申请号：EP93106332.5
申请日：1993-04-20
Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
Inventor： Eda, Kazuo , Sugihara, Miho
CPC classification number: G02B6/122 , G02F1/035 , G02F2201/063 , G02F2202/20
-
公开(公告)号：EP3198750B1
公开(公告)日：2018-11-28
申请号：EP15798323.0
申请日：2015-09-21
Applicant: Technische Universität Berlin , Sicoya GmbH
Inventor： MEISTER, Stefan , AL-SAADI, Aws , KUPIJAI, Sebastian , THEISS, Christoph , RHEE, Hanjo , ZIMMERMANN, Lars , STOLAREK, David
IPC: H04B10/54 , G02F1/017 , G02F1/225 , H01S5/026 , H04B10/548
CPC classification number: G02F1/2257 , G02F1/025 , G02F2001/0152 , G02F2001/212 , G02F2201/063 , G02F2201/124 , G02F2202/105 , H04B10/54 , H04B10/548
-
公开(公告)号：EP3198750A1
公开(公告)日：2017-08-02
申请号：EP15798323.0
申请日：2015-09-21
Applicant: Sicoya GmbH , Sicoya GmbH
Inventor： MEISTER, Stefan , AL-SAADI, Aws , KUPIJAI, Sebastian , THEISS, Christoph , RHEE, Hanjo , ZIMMERMANN, Lars , STOLAREK, David
IPC: H04B10/54 , G02F1/017 , G02F1/225 , H01S5/026 , H04B10/548
CPC classification number: G02F1/2257 , G02F1/025 , G02F2001/0152 , G02F2001/212 , G02F2201/063 , G02F2201/124 , G02F2202/105 , H04B10/54 , H04B10/548
Abstract: The invention relates inter alia to an injection modulator (10) for modulation of optical radiation (P), comprising an optical waveguide (20) and a diode structure (30), which has at least two p-doped semiconductor portions (110), at least two n-doped semiconductor portions (210) and at least one lightly doped or undoped intermediate portion (300) between the p-doped and n-doped semiconductor portions (110, 210). The p-doped semiconductor portions (110) - when viewed in the longitudinal direction (L) of the waveguide (20) - are offset with respect to the n-doped semiconductor portions (210) and the diode structure (30) is arranged in a resonance-free portion of the waveguide (20), in which - apart from waveguide attenuation - the radiation intensity of the radiation (P) guided in the waveguide (20) is constant. According to the invention, the p-doped semiconductor portions (110) lie on one side of the waveguide (20) - when viewed in the longitudinal direction (L) of the waveguide (20) and with respect to the waveguide center - , the n-doped semiconductor portions (210) lie on the other side of the waveguide (20) and the intermediate portion (300) lies in the region of the waveguide center, each semiconductor portion (110, 210) extends transversely with respect to the waveguide longitudinal direction (L) in the direction of the waveguide center of the waveguide (20) and no p-doped semiconductor portion (110) - when viewed in the longitudinal direction (L) of the waveguide (20) - overlaps any n-doped semiconductor portion (210).
Abstract translation: 本发明特别涉及用于调制光辐射（P）的注入调制器（10），其包括光波导（20）和具有至少两个p掺杂半导体部分（110）的二极管结构（30） 至少两个n掺杂半导体部分（210）以及p掺杂和n掺杂半导体部分（110,210）之间的至少一个轻掺杂或未掺杂中间部分（300）。 当沿波导（20）的纵向（L）观察时，p掺杂半导体部分（110）相对于n掺杂半导体部分（210）偏移，并且二极管结构（30）布置在 （20）的无谐振部分，其中除了波导衰减之外，在波导（20）中引导的辐射（P）的辐射强度是恒定的。 根据本发明，当沿波导（20）的纵向（L）和相对于波导中心观察时，p掺杂的半导体部分（110）位于波导（20）的一侧上 - n型掺杂的半导体部分（210）位于波导（20）的另一侧，并且中间部分（300）位于波导中心的区域中，每个半导体部分（110,210）相对于波导 （20）的波导中心方向上的纵向方向（L），并且当沿波导（20）的纵向方向（L）观察时，没有p掺杂半导体部分（110）与任何n掺杂 半导体部分（210）。
-
-
-
-
-
-
-
-
-
Search Results
581
records
(took 0.022 seconds)
