公开(公告)号：US09182474B2

公开(公告)日：2015-11-10

申请号：US13768707

申请日：2013-02-15

Applicant: STMicroelectronics SA ,  STMicroelectronics (Grenoble 2) SAS

Inventor： Thierry Michel ,  Bruno Paille

IPC: G01S1/24 ,  G01S5/14 ,  G01S5/02 ,  G01S5/06 ,  H04B1/707

CPC classification number: G01S5/14 ,  G01S5/0221 ,  G01S5/06 ,  H04B1/707

Abstract: A method for localizing an object, including the acts of: transmission of a first signal by a first transmitter assigned to the object and of a second signal by at least one second transmitter; reception of the first and of the second signal by at least three receivers; in each receiver and for the first and the second signal: a) generation of a first and of a second reference signal; b) correlation between the first signal and the first reference signal and between the second signal and the second reference signal; c) interpolation of samples resulting from the correlation; d) deduction of the propagation time of the first and of the second signal; e) calculation of the difference between the propagation times of the first and of the second signal; and, by triangulation, deduction of the position of the object.

Abstract translation: 一种用于定位对象的方法，包括以下动作：由分配给对象的第一发射机传输第一信号，以及由至少一个第二发射机传输第二信号; 由至少三个接收器接收第一和第二信号; 在每个接收机中以及对于第一和第二信号：a）产生第一和第二参考信号; b）第一信号和第一参考信号之间以及第二信号和第二参考信号之间的相关; c）由相关产生的样本的插值; d）扣除第一和第二信号的传播时间; e）计算第一和第二信号的传播时间之差; 并通过三角测量来扣除物体的位置。

公开(公告)号：US09099604B2

公开(公告)日：2015-08-04

申请号：US13858481

申请日：2013-04-08

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： François Roy ,  Lucile Broussous ,  Julien Michelot ,  Jean-Pierre Oddou

IPC: H01L21/00 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/18 ,  H01L27/14605

Abstract: A method for manufacturing an image sensor, including the successive steps of: forming columns of a semiconductor material; forming one or several pixels at a first end of each of the columns; and deforming the structure so that the second ends of each of the columns come closer to each other or draw away from each other to form a surface in the shape of a polyhedral cap.

Abstract translation: 一种用于制造图像传感器的方法，包括以下连续步骤：形成半导体材料的列; 在每个列的第一端形成一个或几个像素; 并且使结构变形使得每个柱的第二端彼此靠近或彼此拉开以形成多面体盖的形状的表面。

公开(公告)号：US09012957B2

公开(公告)日：2015-04-21

申请号：US14017024

申请日：2013-09-03

Applicant: STMicroelectronics S.A.

Inventor： Vincent Quenette

IPC: H01L29/76 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7813 ,  H01L29/4236 ,  H01L29/66734 ,  H01L29/66787 ,  H01L29/66795 ,  H01L29/7851

Abstract: A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof, the internal surface of the channel-forming semiconductor region being coated with a conductive gate, a gate insulator being interposed.

Abstract translation: 一种MOS晶体管，包括U形沟道形成半导体区域和具有相同U形的源极和漏极区域，其位于其任一侧上的沟道形成区域，沟道形成半导体区域的内表面涂覆有导电 栅极，插入栅极绝缘体。

公开(公告)号：US08975737B2

公开(公告)日：2015-03-10

申请号：US13279138

申请日：2011-10-21

Applicant: Pierre Bar ,  Sylvain Joblot ,  Jean-François Carpentier

Inventor： Pierre Bar ,  Sylvain Joblot ,  Jean-François Carpentier

IPC: H01L23/02 ,  H01P3/08 ,  H01L23/66 ,  H01L25/065 ,  H01P5/02 ,  H01L27/00

CPC classification number: H01P3/082 ,  H01L23/66 ,  H01L25/0657 ,  H01L2223/6627 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2924/0002 ,  H01P5/028 ,  H01L2924/00

Abstract: A transmission line formed in a device including a stack of first and second chips having their front surfaces facing each other and wherein a layer of a filling material separates the front surface of the first chip from the front surface of the second chip, this line including: a conductive strip formed on the front surface side of the first chip in at least one metallization level of the first chip; and a ground plane made of a conductive material formed in at least one metallization level of the second chip.

Abstract translation: 一种传输线，形成在包括第一和第二芯片堆叠的器件中，其前表面彼此面对，并且其中填充材料层将第一芯片的前表面与第二芯片的前表面分离，该线包括 ：形成在所述第一芯片的至少一个金属化层中的所述第一芯片的前表面侧上的导电条; 以及由在第二芯片的至少一个金属化层中形成的导电材料制成的接地平面。

公开(公告)号：US08963273B2

公开(公告)日：2015-02-24

申请号：US14247084

申请日：2014-04-07

Applicant: STMicroelectronics S.A. ,  STMicroelectronics (Crolles 2) SAS

Inventor： Michel Marty ,  François Roy ,  Jens Prima

IPC: H01L31/00 ,  H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。

公开(公告)号：US08759898B2

公开(公告)日：2014-06-24

申请号：US12990682

申请日：2009-05-12

Applicant: Pascal Fornara

Inventor： Pascal Fornara

IPC: H01L29/788

CPC classification number: H01L27/1052 ,  H01L27/112 ,  H01L27/11213 ,  H01L27/11519 ,  H01L27/11521

Abstract: A non-volatile memory including at least first and second memory cells each including a storage MOS transistor with dual gates and an insulation layer provided between the two gates. The insulation layer of the storage transistor of the second memory cell includes at least one portion that is less insulating than the insulation layer of the storage transistor of the first memory cell.

Abstract translation: 包括至少第一和第二存储器单元的非易失性存储器，每个存储单元包括具有双栅极的存储MOS晶体管和设置在两个栅极之间的绝缘层。 第二存储单元的存储晶体管的绝缘层包括与第一存储单元的存储晶体管的绝缘层绝缘性更差的至少一部分。

公开(公告)号：US20140170834A1

公开(公告)日：2014-06-19

申请号：US14104903

申请日：2013-12-12

Applicant: STMicroelectronics (Crolles 2) SAS ,  Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  STMicroelectronics, Inc. ,  STMicroelectronics S.A.

Inventor： Claire Fenouillet-Beranger ,  Stephane Denorme ,  Nicolas Loubet ,  Qing Liu ,  Emmanuel Richard ,  Pierre Perreau

IPC: H01L21/762

CPC classification number: H01L21/76283 ,  H01L21/84 ,  H01L27/1207

Abstract: A method for manufacturing a hybrid SOI/bulk substrate, including the steps of starting from an SOI wafer comprising a single-crystal semiconductor layer called SOI layer, on an insulating layer, on a single-crystal semiconductor substrate; depositing on the SOI layer at least one masking layer and forming openings crossing the masking layer, the SOI layer, and the insulating layer, to reach the substrate; growing by a repeated alternation of selective epitaxy and partial etching steps a semiconductor material; and etching insulating trenches surrounding said openings filled with semiconductor material, while encroaching inwards over the periphery of the openings.

Abstract translation: 一种制造混合SOI /体基板的方法，包括以下步骤：在绝缘层上在单晶半导体衬底上从包括称为SOI层的单晶半导体层的SOI晶片开始; 在SOI层上沉积至少一个掩模层，并形成与掩模层，SOI层和绝缘层交叉的开口，以到达衬底; 通过选择性外延和部分蚀刻步骤的重复交替生长半导体材料; 以及蚀刻围绕填充有半导体材料的所述开口的绝缘沟槽，同时在开口的周边向内侵入。

公开(公告)号：US08711024B2

公开(公告)日：2014-04-29

申请号：US13002274

申请日：2009-06-22

Applicant: Marc Sabut ,  Hugo Gicquel ,  Fabien Reaute ,  François Van Zanten

Inventor： Marc Sabut ,  Hugo Gicquel ,  Fabien Reaute ,  François Van Zanten

IPC: H03M1/12

CPC classification number: H03F3/005

Abstract: A switched capacitor amplifier having an amplification unit adapted to amplify a differential signal; a first switched capacitor block including a first plurality of capacitors operable to sample a first differential input signal during a first sampling phase and to drive the amplification unit during a first drive phase; and a second switched capacitor block including a second plurality of capacitors operable to sample a second differential input signal during a second sampling phase and to drive the amplification unit during a second drive phase.

Abstract translation: 一种开关电容放大器，具有适于放大差分信号的放大单元; 第一开关电容器块，包括第一多个电容器，其可操作以在第一采样阶段期间对第一差分输入信号进行采样，并且在第一驱动阶段期间驱动所述放大单元; 以及包括第二多个电容器的第二开关电容器块，其可操作以在第二采样阶段期间对第二差分输入信号进行采样，并且在第二驱动阶段期间驱动放大单元。

公开(公告)号：US08704363B2

公开(公告)日：2014-04-22

申请号：US12910229

申请日：2010-10-22

Applicant: Yacine Felk ,  Alexis Farcy

Inventor： Yacine Felk ,  Alexis Farcy

IPC: H01L23/34

CPC classification number: H01L25/0657 ,  H01L23/38 ,  H01L35/32 ,  H01L35/34 ,  H01L2224/16225 ,  H01L2225/06517

Abstract: An interface plate capable of being mounted between first and second surface-mounted electronic chips. The plate includes a plurality of first, second, and third through openings, the first openings being filled with a conductive material and being arranged to be in front of pads of the first and second chips during the assembly, the second openings being filled with a second material, the third openings being filled with a third material, the second and third materials forming two complementary components of a thermoelectric couple.

Abstract translation: 一种能够安装在第一和第二表面安装电子芯片之间的接口板。 板包括多个第一，第二和第三通孔，第一开口填充有导电材料，并且在组装过程中布置成位于第一和第二芯片的垫的前面，第二开口填充有 第二材料，第三开口填充有第三材料，第二和第三材料形成热电偶的两个互补组分。

公开(公告)号：US08703528B2

公开(公告)日：2014-04-22

申请号：US13445199

申请日：2012-04-12

Applicant: Michel Marty ,  François Roy ,  Jens Prima

Inventor： Michel Marty ,  François Roy ,  Jens Prima

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14683 ,  H01L27/14687 ,  H01L27/14689

Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

Abstract translation: 一种用于形成背面照明图像传感器的方法，包括以下步骤：a）从前表面形成与衬底相反的导电类型的掺杂多晶硅区域，其垂直于正面延伸， 进入第一层; b）使衬底从其后表面变薄到达多晶硅区域，同时保持第一层的条带; c）在所述薄化衬底的后表面上沉积与所述衬底相反的导电类型的掺杂非晶硅层; 和d）在能够将非晶硅层转变成结晶层的温度下退火。