Piezoelectric microphone with concentric electrodes arranged so that the gaps coincide with the inflexion points

    公开(公告)号:GB2444184A

    公开(公告)日:2008-05-28

    申请号:GB0723264

    申请日:2007-11-27

    Abstract: A transducer 201 structure for an electronic device comprises an upper inner electrode 204, an upper outer electrode 202, a lower inner electrode 301, a lower outer electrode 302 a layer of piezoelectric material 203 disposed between the upper electrodes and the lower electrodes, an upper gap 205 between the upper inner electrode and the upper outer electrode, and a lower gap 303 between the lower inner electrode and the lower outer electrode. The upper gap 205 and the lower gap 303 are located to substantially coincide with respective inflexion points of the transducer structure during oscillation. The upper and lower electrodes may be connected to form the plates of capacitors, connected in parallel or in series. The electrodes may be selectively connected to contact pads.

    Acoustic resonator
    63.
    发明专利

    公开(公告)号:GB2415307B

    公开(公告)日:2008-02-27

    申请号:GB0511765

    申请日:2005-06-09

    Abstract: An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.

    Matching acoustic wave filters
    64.
    发明专利

    公开(公告)号:GB2441036A

    公开(公告)日:2008-02-20

    申请号:GB0715475

    申请日:2007-08-08

    Abstract: A device or method of matching acoustic wave filters 420 to a radio frequency device 405 comprises a common terminal 410 which is directly connected, or connected via a respective capacitor 425, to acoustic wave filters 420 and where a transmission line 415 or an inductor is connected between the common terminal 410 and ground. There may be three or more acoustic filters 425 in which each filter may be in the form of surface acoustic wave SAW filter, bulk acoustic wave BAW filter or a thin film bulk acoustic resonator FBAR filter. A capacitance value corresponding to each of n filters (C1m , C2m, ...Cnm) may be included in the matching circuitry 412. Some or all of the capacitance value may be already built into the filters 420. A common capacitor and/or separate capacitors associated with each filter may be used. The filters 420 and their matching circuitry 412 may be arranged on a single layer circuit board. A cheap, compact multiplexed acoustic filter arrangement suitable for connection to the antenna of a mobile communication device may be obtained.

    65.
    发明专利
    未知

    公开(公告)号:DE10325020B4

    公开(公告)日:2007-10-31

    申请号:DE10325020

    申请日:2003-06-03

    Inventor: GEEFAY FRANK S

    Abstract: An apparatus includes a device chip having circuit elements fabricated on a substrate and a cap covering at least a portion of the device chip including the circuit elements such as thin film resonators. The placement of the cap on the device chip is sealed using a gasket having treaded surface for improved adhesion, cold weld deformation of gold, and decreased susceptibility to foreign particles resulting in a superior seal.

    66.
    发明专利
    未知

    公开(公告)号:DE60130298D1

    公开(公告)日:2007-10-18

    申请号:DE60130298

    申请日:2001-05-28

    Inventor: RUBY RICHARD C

    Abstract: A plurality of acoustic resonators (217) are manufactured in a batch process by forming cavities (204) in a substrate (200) and filling the cavities with a sacrificial layer (210). An FBAR membrane comprising a bottom electrode (212), a piezoelectric layer (214), and a top electrode (216) is formed over each cavity (204) and the sacrificial layer (210). The substrate (200) is then thinned and the substrate (200) is separated into a plurality of dice using a scribe and break process. The sacrificial layer (210) is then removed and the FBAR filter (226) is mounted in a package (228) with thermal vias (238) being thermal communication with underside of the FBAR filter. The production method improves thermal properties by increasing the efficiency of heat dissipation from the FBAR filter. In addition, electromagnetic interference is decreased by reducing the distance between a primary current flowing over the surface of the FBAR filter and an image current flowing in a ground plane beneath the FBAR filter.

    Linear variable gain travelling wave amplifier

    公开(公告)号:GB2436179A

    公开(公告)日:2007-09-19

    申请号:GB0704229

    申请日:2007-03-05

    Abstract: An amplifier circuit particularly suitable for a distributed amplifier (integrated circuit 300, fig 3) is disclosed. The distributed amplifier includes a plurality of amplification stages (332, 334, 336, fig.3). At least one of the amplification stages includes an amplification transistor such as a field effect transistor (140, fig. 4) having a feedback path implemented with another FET (340, fig.4) connected between its drain and its gate via capacitor 348. The feedback path provides in effect a variable resistive feedback and allows the amplification FET to operate at its linear response portion of its characteristic curve (fig.2) over a range of gain control. A common gate FET (350) is used to maintain impedance match to the output matching circuit (120, fig.3) of the distributed amplifier. Distortion free amplification is achieved.

    Variable frequency oscillator incorporating film bulk acoustic resonators

    公开(公告)号:GB2433660A

    公开(公告)日:2007-06-27

    申请号:GB0625441

    申请日:2006-12-20

    Abstract: A variable-frequency oscillator 10 includes a first oscillator circuit 12 and a second oscillator circuit 14. The first oscillator circuit 12 includes a first film bulk acoustic resonator 16 that has a first resonant frequency. The second oscillator circuit 14 is coupled to the first oscillator circuit and includes a second FBAR 18 that has a second resonant frequency different from the first resonant frequency. At least one current source 20 is coupled to the first and second oscillator circuits and is operable to supply a total current Io. A bias circuit 22 is operable to apply to the first and second oscillator circuits respective biases that control apportionment of the total current to the first and second oscillators. The variable frequency oscillator may be part of a phase locked loop.

    70.
    发明专利
    未知

    公开(公告)号:DE102006048193A1

    公开(公告)日:2007-04-26

    申请号:DE102006048193

    申请日:2006-10-11

    Abstract: Embodiments of the acoustic galvanic isolator comprise a carrier signal source, a modulator connected to receive an information signal and the carrier signal, a demodulator, and an electrically-isolating acoustic coupler connected between the modulator and the demodulator. The electrically-isolating acoustic coupler comprises series-connected decoupled stacked bulk acoustic resonators (DSBARs).

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