Abstract:
PROBLEM TO BE SOLVED: To provide an efficient inspection by preventing the occurrence of quasi-defects due to a position alignment error. SOLUTION: A sample inspection device includes: a measurement image generating section for generating a measurement image by measuring a sample pattern; a comparator for comparing the measuring image with a reference image and determining a sample which is defective, when the difference between them exceeds a threshold; a position displacement measuring section for measuring a displacement amount between area images with a fixed area that are segmented from the measuring image and the reference image and determining reliability information, indicating the reliability of the position displacement amount between them; and a position aligning section for aligning the positions of the area images, by utilizing the reliability information and the position displacement amount. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a device which performs a pattern inspection for reducing false defects. SOLUTION: A pattern inspection device 100 includes: an optical image acquisition part 150 which obtains optical image data in a pattern-formed photomask 101; a development circuit 111 which develops design data of a pattern to image data to generate developed image data; a distortion image generation circuit 140 which performs distortion processing to the developed image data to generate distortion image data; a dissimilar index calculation circuit 142 which calculates a dissimilar index showing difference between the developed image data and the distortion image data by each pixel; a reference image generation circuit 112 which performs data processing to the developed image data to generate reference image data to be compared with the optical image data; and a comparison circuit 108 which compares the optical image data with the reference image data under criteria according to the dissimilar index by each pixel. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To perform pattern inspection in which a false image of a measurement image occurring temporarily is eliminated. SOLUTION: The sample inspection device includes a measurement image generating part for measuring a pattern of a sample to generate the measurement image, and a comparing part for comparing the measurement image with a reference image. The measurement image generating part includes a light receiving device where two or more time delay integration sensors using two or more stages of line sensors each of which is composed of two or more pixels are connected. The measurement image generating part sets, as the measurement image, the average value of pixel values excluding an abnormal pixel value, or the average value of pixel values excluding a pixel value exceeding a reference value as an abnormal pixel value, for the pixels of respective time delay integration sensors, or sets, as the measurement image, the average value of pixel values excluding a pixel value exceeding a reference value as an abnormal pixel value using the sum of the average value of pixel values and a predetermined value as the reference value, or sets, as the measurement image, the average value of pixel values excluding a pixel value as an abnormal pixel value, where the absolute value of the difference between the pixel value and the average value of the pixel values of all time delay integration sensors exceeds a reference value. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To discriminate an assist pattern from patterns of a sample using a transmitted image and a reflected image. SOLUTION: This pattern discriminator includes an optical image acquiring part for simultaneously acquiring the transmitted image and reflected image of the sample having the pattern and an assist pattern discriminating part for discriminating the assist pattern from the pattern shapes of the transmitted image and the reflected image by the discriminating condition of the specific pattern. This inspection device of the sample includes the optical image acquiring part for simultaneously acquiring the transmitted image and reflected image of the sample having the pattern, and the assist pattern discriminating part for discriminating the assist pattern from the pattern shapes of the transmitted image and the reflected image by the discriminating condition of the pattern, a desense region setting part for setting the assist pattern to a desense region, and a comparative determining part for performing the comparative inspection of the pattern in the desense region. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a lightweight and inexpensive mask inspection apparatus having highly efficient environmental radiation resistance. SOLUTION: This mask inspection apparatus is one for inspecting for mask defects and includes a light source, an illuminating optical system for irradiating a mask with an inspection light emitted from the light source, a magnifying optical system for causing the inspection light with which the mask is irradiated to form an image as an optical image, and an image sensor 10 for acquiring the optical image. The image sensor 10 has an environmental radiation shielding member of heavy metal having a specific gravity equal to or greater than that of tantalum (Ta) at least on a side opposite to a receiving surface of a sensor chip. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a reticle flaw inspection device capable of detecting the positional shift flaw of an isolated pattern, and a reticle flaw inspection method. SOLUTION: In the aligning means 13a of a detection part 13, the alignment of an optical image acquired by TDI sensors 11a and 11b with a reference image produced by a reference image producing part 15 is performed at every frame wherein the striplike stripe of a reticle 2 is finely divided. In an allowable range calculation means 13c, the aligning quantity corresponding to one stripe is subjected to primary regression to calculate the reference aligning quantity corresponding to one stripe. In a positional shift flaw detection means 13d, the pattern of the frame, wherein the aligning quantity is differentiated from the reference aligning quantity by a predetermined value or above, is detected as the positional shift flaw of the pattern. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To control the polarization state independently in many areas in a light flux without increasing the number of divisions of a divided wavelength plate. SOLUTION: A polarization controller includes a straight polarization generation device which generates a straight polarized light beam, and a pair of 4-division type 1/2 wavelength plates divided into four regions by two orthogonal boundary lines, divides the straight polarized light beam into eight areas, and changes the polarization state of each area into a circumferential or radial shape by passing the light beam through the pair of 4-division type 1/2 wavelength plates. Alternatively, the polarization controller comprises a pair of 2-division type 1/2 wavelength plate divided into two regions by one boundary line, divides a straight polarization light beam into four areas by passing the light beam through the pair of 2-division type 1/2 wavelength plate, and changes the polarization state of each area into a circumferential or radial shape. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To perform pattern inspection capable of excluding the temporarily produced false image of a measured image. SOLUTION: The sample inspection device is equipped with a measured image forming part for measuring the pattern of a sample to form the measured image, a measured image pixel difference calculation part for calculating the difference value of the adjacent pixels of the measured image, and a comparison part for comparing the measured image with a reference image and constituted so as to again measure the pattern of a pixel-containing region in a case that the difference value of the adjacent pixels of the measured image exceeds a predetermined value. Alternatively, the sample inspection device is equipped with the measured image forming part for measuring the pattern of the sample to form the measured image, a difference image pixel difference calculation part for calculating the difference image of the measured image and the reference image and calculating the difference image of the adjacent pixels of the difference image, and a comparison part for comparing the measured image with the reference image and constituted so as to again measure the pattern of the pixel-containing region in a case that the difference value of the adjacent pixels of the difference image exceeds a predetermined value. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an apparatus and a method for conducting a pattern test capable of reducing false defects. SOLUTION: The pattern test apparatus 100 is equipped with: an optical image acquiring section 150 for acquiring optical image data of a test sample formed in a pattern; a level adjusting circuit 140 which inputs the optical image data and reference image data corresponding to the optical image data, and adjusts at least one of a pixel value level of the optical image data and a pixel value level of the reference image data from a relation between a plurality of pixel values of the optical image data and a plurality of pixel of values of the reference image data; and a comparing circuit 108 for comparing the optical image data with the reference image data being respectively adjusted in the pixel value level. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an Extreme Ultra Violet (EUV) exposure mask which improves contrast for ultraviolet rays of inspection light and improves the inspection performance of the mask, and an EUV exposure mask blank for manufacturing the mask. SOLUTION: The EUV exposure mask blank 10 includes a substrate 12, a reflective layer 14 which is prepared on the substrate 12 and reflects EUV light, and an absorption layer 16 which is prepared on the reflective layer 14 and absorbs EUV light, wherein the reflectance ratio of light having 150 nm or longer and 300 nm or shorter of a wavelength is higher in the absorption layer 16 than in the reflective layer 14, and the EUV exposure mask 20 which is manufactured by processing the blank. COPYRIGHT: (C)2009,JPO&INPIT