Abstract:
PROBLEM TO BE SOLVED: To provide a positive electrode material for a secondary battery and a manufacturing method for the positive electrode material in which a manganese fluorophosphates oxide LiNaMnPOF simultaneously containing lithium and sodium can be used as an electrode material.SOLUTION: A positive electrode material of a lithium battery can be provided which is made usable as an electrode raw material by manufacturing LiNaMnPOF obtained by partially substituting lithium in the sodium position by a chemical process and which has electrochemical activity obtained by improving electrical conductivity by carbon coating.
Abstract translation:要解决的问题:提供一种二次电池用正极材料及其制造方法,所述正极材料中含有磷酸锰的氧化物Li SB> Na 2-X 4 SB> F作为电极材料。 解决方案:可以提供通过制造可用作电极原料的锂电池的正极材料,通过制造Li X SB> Na 通过化学方法部分取代钠的钠而获得的具有通过改善通过碳涂覆的导电性获得的电化学活性而获得的2-X SB> MnPO SB SB =“POST”> 4 SB> F。 版权所有(C)2013,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To reduce an overall size by further decreasing a gate area not only by simplifying an entire configuration but also by accelerating an operating speed. SOLUTION: A pseudo-orthogonal code generator includes: a serial/parallel converter for converting serial transmission data into parallel data for the unit of nine bits; a four-bit counter for repeatedly counting from 0 to 15; and a combination circuit unit for sequentially generating a pseudo-orthogonal code of 16 bits using the parallel data of nine bits and a four-bit counter value. Signal processing in the combination circuit unit is represented by a predetermined expression (0≤I≤15) of cb0(I), cb1(I), cb2(I), cb3(I), C(I) wherein C(I) is 0≤I≤15 as a pseudo-orthogonal code for the parallel data of nine bits, b0-b9 are the parallel data of nine bits, and i0-i3 are four-bit counter values binarized from the I which corresponds to an index for 16-bit pseudo-orthogonal code. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a large quantity of semiconductor nano wire elements eliminating a complicated nano wire positioning step and an SOI wafer at a low cost, with no necessity of forming an extremely fine pattern using electronic beams, and by forming a single crystal silicon nano wire by an easy method, transferring the nano wire separated from a substrate onto an other oxide film or a silicon substrate formed with an insulating film. SOLUTION: A manufacturing step of a nano wire element includes the steps of: forming a first thermal oxidation film on a single crystal silicon substrate (100) and forming the first thermal oxidation film into a pattern for securing a support structure region to support the nano wire region and the nano wire; dry-etching the silicon substrate; wet-etching the silicon substrate by anisotropical etching solution; forming a second thermal oxidation film on the silicon substrate; and removing all of the thermal oxidation films. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
본발명은파워스위치의스위칭특성분석장치및 방법이개시된다. 본발명의스위칭특성분석장치는파워스위치, 인덕터및 커패시터가구비된 Arm 회로를복수개포함하는 Arm 회로부, Arm 회로마다구비된파워스위치와인접한위치에공용으로연결되어각각의파워스위치에동일한온도의열을전달하는히팅플레이트및 파워스위치의스위칭및 히팅플레이트의온도를제어하여파워스위치및 게이트드라이브의특성분석을하는제어부를포함한다.