公开(公告)号：KR1020000060991A

公开(公告)日：2000-10-16

申请号：KR1019990009703

申请日：1999-03-22

Applicant: 삼성전자주식회사

Inventor： 박완재 ,  신경섭 ,  김지수

IPC: H01L21/3065

Abstract: PURPOSE: A method for a plasma etching is provided to prevent a charge-up damage by minimizing an electron temperature in a dry etching process. CONSTITUTION: A method for a plasma etching comprises the steps of: preparing plasma by applying a radio frequency(RF) source power to a first electrode in an etch chamber; and applying an RF bias power to a second electrode in an etch chamber including a supporting bar of a substrate. The RF source power and RF bias power are periodically turned on and off to have a phase difference between the RF source power and RF bias power, so that a charge separation generated between an upper region of a material layer pattern and a lower region of a neighboring material layer pattern is minimized.

Abstract translation: 目的：提供等离子体蚀刻的方法，以通过使干法蚀刻工艺中的电子温度最小化来防止充电损伤。 构成：用于等离子体蚀刻的方法包括以下步骤：通过将射频（RF）源功率施加到蚀刻室中的第一电极来制备等离子体; 以及在包括衬底的支撑棒的蚀刻室中向第二电极施加RF偏置功率。 RF源功率和RF偏置功率被周期性地导通和截止以在RF源功率和RF偏置功率之间具有相位差，使得在材料层图案的上部区域和 相邻材料层图案被最小化。

公开(公告)号：KR1019980012194A

公开(公告)日：1998-04-30

申请号：KR1019960031174

申请日：1996-07-29

Applicant: 삼성전자주식회사

Inventor： 박완재

IPC: H01L21/66