公开(公告)号：KR1020030008724A

公开(公告)日：2003-01-29

申请号：KR1020010043579

申请日：2001-07-19

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  배도인 ,  김국광

IPC: H01L21/68

Abstract: PURPOSE: An electrostatic chuck for improving chucking performance of an edge portion is provided to improve the chucking performance of the edge portion by forming a dielectric layer of the edge portion thinner than the dielectric layer of a center portion. CONSTITUTION: An electrostatic chuck(30) is formed with an electrostatic chuck body(31), an insulating layer(32), an electrode(33), and a dielectric body(34). The insulating layer(32) is used for insulating the electrode(33) and the electrostatic chuck body(31). The electrostatic chuck body(31) is formed with Al. The electrode(33) has a ring-shaped step portion since an edge portion of the electrode(33) is thicker than a center portion of the electrode(33). The electrode(33) is formed by coating Al on an upper face of the insulating layer(32). The dielectric layer(34) is formed on an upper face of the electrode(33). The dielectric layer(34) is formed by coating ceramic particles on electrode(33). The dielectric layer(34) has a cooling line(35).

Abstract translation: 目的：提供一种用于改善边缘部分的夹持性能的静电卡盘，以通过形成比中心部分的电介质层更薄的边缘部分的电介质层来改善边缘部分的夹持性能。 构成：静电卡盘（30）形成有静电卡盘体​​（31），绝缘层（32），电极（33）和电介质体（34）。 绝缘层（32）用于绝缘电极（33）和静电卡盘体​​（31）。 静电卡盘体​​31形成有Al。 由于电极（33）的边缘部分比电极（33）的中心部分厚，电极（33）具有环状台阶部。 电极（33）通过在绝缘层（32）的上表面上涂覆Al而形成。 电介质层（34）形成在电极（33）的上表面上。 电介质层（34）通过在电极（33）上涂覆陶瓷颗粒而形成。 电介质层（34）具有冷却线（35）。

公开(公告)号：KR1020020064508A

公开(公告)日：2002-08-09

申请号：KR1020010005031

申请日：2001-02-02

Applicant: 삼성전자주식회사

Inventor： 이태원 ,  배도인 ,  이상열 ,  이흥상 ,  신광희

IPC: H01L21/68

Abstract: PURPOSE: An electrostatic chuck is provided to stably keep an operational characteristic at a high temperature by minimizing a stress caused by the difference of thermal expansion between layers. CONSTITUTION: An electrostatic chuck comprises a metal base(10) made of an alloyed Al, an insulation layer(20) made of Al2O3 formed by anodizing the upper surface of the metal base(10), an electrode layer(30) formed by depositing W-Cu having a lower thermal expansion coefficient than that of the insulation layer(20), a dielectric layer(40) formed by depositing AIN having a lower thermal expansion coefficient than that of the electrode layer(30). At this time, the electrode layer(30) includes Cu in the range of 10-30%.

Abstract translation: 目的：提供静电卡盘，通过最小化由层间热膨胀差引起的应力来稳定地保持高温下的操作特性。 构成：静电卡盘包括由合金化Al制成的金属基底（10），通过阳极氧化金属基底（10）的上表面形成的由Al2O3制成的绝缘层（20），通过沉积形成的电极层（30） 具有比绝缘层（20）的热膨胀系数低的热膨胀系数的W-Cu，通过沉积具有比电极层（30）的热膨胀系数低的AIN形成的电介质层（40）。 此时，电极层（30）包含10〜30％的Cu。