公开(公告)号：KR1019950009283B1

公开(公告)日：1995-08-18

申请号：KR1019920015206

申请日：1992-08-24

Applicant: 삼성전자주식회사

Inventor： 신헌종 ,  송윤흡

IPC: H01L21/28

CPC classification number: H01L21/28052 ,  H01L21/76889

Abstract: (i) forming a polycrystal silicon layer as the first conduction layer on an insulating film; (ii) continuously forming a second conduction layer along with a buffer layer over the first conduction layer to prevent the mutual migration of silicon: and (iii) forming a fine resistant metal layer on the second conduction layer. The method achieves miniaturisation and provides high concentration polycrystal silicon.

Abstract translation: （i）在绝缘膜上形成多晶硅层作为第一导电层; （ii）在第一导电层上连续形成第二导电层以及缓冲层，以防止硅的相互迁移;（iii）在第二导电层上形成耐细金属层。 该方法实现了小型化，并提供了高浓度多晶硅。