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    Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology
    61.
    发明申请
    Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology 有权
    基于衍射的覆盖计量工具和基于衍射的覆盖计量方法

    公开(公告)号：US20140192338A1

    公开(公告)日：2014-07-10

    申请号：US14202825

    申请日：2014-03-10

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey DEN BOEF

    IPC: G01N21/956 ,  G03F7/20

    CPC classification number: G01N21/95607 ,  G03F7/7015 ,  G03F7/70633

    Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

    Abstract translation: 提供了系统，方法和装置，用于确定衬底上的图案的覆盖层，其中掩模图案限定在衬底上图案顶部上的抗蚀剂层中。 第一光栅设置在第二光栅下方，每个具有与另一光栅基本相同的间距，一起形成复合光栅。 沿着第一水平方向以入射角设置第一照明光束。 测量来自复合光栅的衍射光束的强度。 沿着第二水平方向的入射角设置第二照明光束。 第二水平方向与第一水平方向相反。 测量来自复合光栅的衍射光束的强度。 来自第一照明光束的衍射光束与来自第二照明光束的衍射光束之间的差异线性缩放导致重叠误差。

    DARK FIELD DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED METROLOGY METHOD
    64.
    发明公开
    DARK FIELD DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED METROLOGY METHOD 审中-公开

    公开(公告)号：US20230341813A1

    公开(公告)日：2023-10-26

    申请号：US18034356

    申请日：2021-10-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Nitesh PANDEY ,  Arie Jeffrey DEN BOEF ,  Hugo Augustinus Joseph CRAMER ,  Vasco Tomas TENNER

    IPC: G03H1/26 ,  G03H1/04

    CPC classification number: G03H1/0443 ,  G03H1/265 ,  G03H2001/005

    Abstract: A dark field digital holographic microscope and associated metrology method is disclosed which is configured to determine a characteristic of interest of a structure. The dark field digital holographic microscope includes an illumination branch for providing illumination radiation to illuminate the structure; a detection arrangement for capturing object radiation resulting from diffraction of the illumination radiation by the structure; and a reference branch for providing reference radiation for interfering with the object radiation to obtain an image of an interference pattern formed by the illumination radiation and reference radiation. The reference branch has an optical element operable to vary a characteristic of the reference radiation so as to reduce and/or minimize variation in a contrast metric of the image within a field of view of the dark field digital holographic microscope at a detector plane.

    Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology
    65.
    发明申请
    Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology 有权

    公开(公告)号：US20230075781A1

    公开(公告)日：2023-03-09

    申请号：US18056073

    申请日：2022-11-16

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey DEN BOEF

    IPC: G01N21/956 ,  G03F7/20

    Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT
    66.
    发明申请
    ON CHIP SENSOR FOR WAFER OVERLAY MEASUREMENT 有权

    公开(公告)号：US20220283516A1

    公开(公告)日：2022-09-08

    申请号：US17637942

    申请日：2020-08-05

    Applicant: ASML Holding N.V. ,  ASML Netherlands B.V.

    Inventor： Mohamed SWILLAM ,  Stephen ROUX ,  Tamer Mohamed Tawfik Ah ELAZHARY ,  Arie Jeffrey DEN BOEF

    IPC: G03F7/20 ,  G02B6/122 ,  G02B26/08

    Abstract: A sensor apparatus includes a sensor chip, an illumination system, a first optical system, a second optical system, and a detector system. The illumination system is coupled to the sensor chip and transmits an illumination beam along an illumination path. The first optical system is coupled to the sensor chip and includes a first integrated optic to configure and transmit the illumination beam toward a diffraction target on a substrate, disposed adjacent to the sensor chip, and generate a signal beam including diffraction order sub-beams generated from the diffraction target. The second optical system is coupled to the sensor chip and includes a second integrated optic to collect and transmit the signal beam from a first side to a second side of the sensor chip. The detector system is configured to measure a characteristic of the diffraction target based on the signal beam transmitted by the second optical system.

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