Abstract:
PURPOSE:To make it possible to detect even infrared rays repeatedly incident at high-speed by sequentially delaying the timing at which a voltage is applied on an electrooptic crystal, and detecting the amount of received light at this time. CONSTITUTION:An applied-voltage controlling device 22 increases a delay time by (t) for every emission of light based on a light-emission timing signal which is detected with a light-emission timing detector 20. A specified voltage is applied on an electrooptic crystal 10 during this period. Therefore, abnormal light 16B is inputted into a photodiode 18B only during the period wherein the voltage is applied on the electrooptic crystal 10 from the applied-voltage controlling circuit 22. The amount of the abnormal light 16B which is received with the photodiode 18B is proportional to the height of the wave form of the emitted light (signal light) at the voltage applying time. Therefore, when the amount of the received light of the photodiode 18B is obtained at every timing when the voltage is applied on the electrooptic crystal 10 from the applied-voltage controlling device 22, the wave form of the signal light can be regenerated in a wave form forming device 24.
Abstract:
PURPOSE:To determine a crystal orientation with a simple method by a method wherein a vibration plane of an electric vector of a laser light is turned to a crystal plane and the light comes into the crystal plane to measure a dependence of a reflection factor on angle of rotation. CONSTITUTION:A part of a beam B0 from a laser light source 1 comes into a photodetector 6 with a splitter 5 as monitor beam BM. Then, the beam transmitted through the splitter 5 is turned to a beam B1 with a vibration plane of an electric vector turning by a rotatable 1/2 wavelength plate 2 to come into a crystal 3 and reflected light BR thereof comes into a photodetector 4. Then, a reflection factor of the crystal 3 is measured from a ratio of intensities of the beams B1 and BR. A change in the intensity of the beam B1 is corrected by a beam BM, thereby enabling accurate measurement of dependence of the reflection factor on an angle of rotation of the beam B1. Thus, a crystal orientation can be determined with a simple method.
Abstract:
PURPOSE:To obtain a device which is small in fluctuation and rapid in shift of wavelength, and efficient and moreover surely protected against damage of crystal by a method wherein a light parametric oscillator varies oscillating light in wavelength by changing incident angle of excited light incident on niobic acid kalium crystal and a secondary harmonic generator are provided. CONSTITUTION:A niobic acid kalium crystal 16 is provided between an incident mirror 14 and a projecting mirror 15, a light parametric oscillator 10 in wavelength outputted through the intermediary of a projecting mirror 15 by changing incident angle of excited light incident on a niobic acid kalium crystal 16 through the intermediary of the incident mirror 14 and a secondary harmonic generator 11 which outputs secondary harmonic of incident light, which is the oscillating light 20 outputted from the said parametric oscillator 10, as projecting light 25 by controlling incident angle of the said light incident on a niobic acid kalium crystal 23 are provided. The said light parametric oscillator 10 and the said secondary harmonic generator 11 are, for example, rendered to control incident angle of the excited light 12 or the oscillating light 20 incident on the crystals 16 or 23 by rotating the crystals 16 or 23 respectively.
Abstract:
PURPOSE:To obtain a laser whose wavelength can be varied in a wide band by providing a rotator which is conposed of 1st rotating part which turns a crystal for a light wavelength converter (2nd harmonic generator) in a plane parallel to a light axis and 2nd rotating part which turns the crystal in a olane vertical to the light axis. CONSTITUTION:An ordinary light (o-component) of the output light of optical parametric oscillator (OPO) 1 is applied to a 2nd harmonic generator (SHG) 2 and a SHG crystal 9 is turned in a plane parallel to a light axis 10 by the 1st rotating part 16 of a rotator 18. If the rotation angle (theta) is varied within the range of 90-50 degrees, an output wavelength is varied as shown by a characteristic curve (C). Then, if the motor 27 of the 2nd rotating part 17 of the rotator 18 is turned 360 degrees, an index table 23 is turned 90 degrees with the light axis 10 as a center of turning by a parallel index cam 24. Then, an e-component, which is an extraordinary light for the SHG crystal 9, is turned into an ordinary light. In this state, the SHG crystal 9 is turned by the motor 20 of the 1st rotating part 16 for phase matching and the wavelength conversion is applied to the ordinary light component of the SHG output as shown by a characteristic curve (D). As a result, even if the rotation range is 90-50 degrees, a laser whose wavelength can be varied over the whole range of 250-1230 nm can be obtained.
Abstract:
PURPOSE:To maintain power density of a laser incident at a crystal at an optimum value by providing some of plural lenses with driving devices for reducing and enlarging a beam diameter of optional magnification by regulating a lens position. CONSTITUTION:The first and second lenses 11 and 12 of the first, second and third lenses 11, 12 and 13 are provided lens driving devices 14 and 15 respectively for positional shifting. The distance from the back face of the first lens 11 to the front face of the lens 12 shall be L1 and the distance from the rear face of the second lens 12 to the rear face of the third lens 13 shall be L2. Magnification can be changed by shifting at least either of the first and second lenses 11 and 12, shifting is so performed that the distance between L1 and L2 may have a prescribed relation lest a projected beam from the third lens 13 should diverge, converge and damage a crystal. Thereby, magnification of the beam diameter can be optionally regulated so as to easily regulate it to the optimum condition even if an output beam diameter, power and pulse width are changed according to the kind of laser, solid difference and change with the lapse of time.
Abstract:
PURPOSE:To prevent an optical axis from being sheared by providing the dielectric substance to correct the shear of the optical axis generated at the time of turning a non-linear optical crystal face and rotating the dielectric substance. CONSTITUTION:A signal for obtaining a projecting laser beams with an objective wavelength lambda is inputted from an input terminal 29 to a CPU 25. The CPU 25 rotates the non-linear optical crystal 6 by a prescribed angle theta0 through a driving circuit 23 and a driving device 11. Since the wavelength of the projection laser beam is changed, the optical axis 12 is moved in parallel by a prescribed distance (d). The CPU 25 receives the parallel moving distance (d), calculates a rotational angle theta1 corresponding to the distance (d) and rotates the dielectric substance 13 by the rotational angle theta1 through a driving circuit 24 and a dielectric substance driving circuit 15. Consequently, the optical axis 14 after diffraction can be always allowed to coincide with the optical axis 10 of the incident laser.
Abstract:
PURPOSE:To simplify the structure of an incident mirror and an emitting mirror, and to make manufacturing easy by setting a reflection factor to the oscillation light of the incident mirror and the emitting mirror, to a specific value. CONSTITUTION:Laser oscillation and excitation light 7 by a pulse oscillation type Nd-YAG laser 1, and mirrors 5, 6 is made incident on a collimator lens 10, an incident mirror 11 of a dielectric multi-layer vapor-deposited film, a non-linear optical crystal 13 for varying the wavelength of an emitting layer by controlling a turning incident angle, and an optical parametric oscillator 8 provided with the same emitting mirror 14 as the mirror 11, and an oscillation light 15 whose wavelength is variable is emitted. A reflection factor to the oscillation light of these mirrors 11, 14 is set to a small value of about 50% and the transmittivity becomes larger remarkably, the number of layers of the dielectric multi-layer vapor-deposited film can be decreased remarkably to 10 layers, etc., the structure of the incident mirror and the emitting mirror is simplified and they can be manufactured easily.
Abstract:
PROBLEM TO BE SOLVED: To reduce thermal effect by controlling an excitation distribution of a solid state laser medium appropriately when a solid state laser is excited using an excitation light source of such a structure as stacking a large number of unit light sources. SOLUTION: The excitation distribution controller 10 has a moving unit 40, a measuring section 50 and a control section 60 in addition to a solid state laser medium 31 and an excitation light source 32. The moving unit can alter the distance between the solid state laser medium and the excitation light source by moving the excitation light source. The measuring section measures an excitation distribution of the solid state laser medium. The control section regulates the distance between the solid state laser medium and the excitation light source by driving the moving unit depending on the excitation distribution thus measured. When a plurality of unit light sources 33 are stacked in the excitation light source, intensity distribution of exciting light of the solid state laser medium depends on the distance between the solid state laser medium and the excitation light source. Consequently, thermal effect can be reduced by regulating that distance and controlling excitation distribution of the solid state laser medium appropriately. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a low price optical mask which can further reduce optical intensity peak resulting from diffraction. SOLUTION: The optical mask 14 is formed by stacking a first mask 141 and a second mask 142. The first mask 141 and the second mask 142 are respectively cerated aperture masks. The aperture 141a of the first mask 141 and the aperture 142a of the second mask 142 are respectively formed almost in the rectangular shapes and are respectively identical. The circumferential edge for defining the aperture 141a of the first mask 141 is formed in the sawtooth shape, while the circumferential edge for defining the aperture 142a of the second mask 142 is also formed in the sawtooth shape. In the optical mask 14, the first mask 141 and the second mask 142 are stacked so that the sawtooth is alternately disposed in the sawtooth shape of the circumferential edges for defining the aperture 141a of the first mask 141 and the aperture 142a of the second mask 142. COPYRIGHT: (C)2005,JPO&NCIPI