公开(公告)号：JP2012028754A

公开(公告)日：2012-02-09

申请号：JP2011137112

申请日：2011-06-21

Applicant: Japan Science & Technology Agency ,  Jsr Corp ,  Jsr株式会社 ,  Seiko Epson Corp ,  Toshiba Corp ,  セイコーエプソン株式会社 ,  株式会社東芝 ,  独立行政法人科学技術振興機構

Inventor： SAKURAI NAOAKI ,  NAKA TOMOMICHI ,  SHIOZAWA KAZUNORI ,  KONDO HIROYASU ,  SHIMODA TATSUYA ,  MATSUKI YASUO ,  MASUDA TAKASHI

IPC: H01L31/04

CPC classification number: H01L31/1804 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin film silicon solar cell capable of easily manufacturing the thin film silicon solar cell in an application method while suppressing an increase in dangling bonds of a silicon layer.SOLUTION: A manufacturing method of a thin film silicon solar cell 11A includes: a step of forming a first electrode 3 on a substrate; a step of forming a silicon layer 5A by laminating an n-type silicon layer 5An, an i-type silicon layer 5Ai, and a p-type silicon layer 5Ap on the first electrode 3 using a technique for pattern-applying and drying a solution including polysilane in an inert gas atmosphere; and a step of forming a second electrode 8 on the silicon layer 5A. The step of forming the silicon layer 5A performs dangling bond reduction processing for at least one layer of the n-type silicon layer 5An, i-type silicon layer 5Ai, and p-type silicon layer 5Ap.

Abstract translation: 要解决的问题：提供一种在施加方法中能够容易地制造薄膜硅太阳能电池的薄膜硅太阳能电池的制造方法，同时抑制硅层的悬挂键的增加。 解决方案：薄膜硅太阳能电池11A的制造方法包括：在基板上形成第一电极3的步骤; 使用图案施加和干燥溶液的技术在第一电极3上层叠n型硅层5An，i型硅层5Ai和p型硅层5Ap，形成硅层5A的步骤 包括在惰性气体气氛中的聚硅烷; 以及在硅层5A上形成第二电极8的步骤。 形成硅层5A的步骤对n型硅层5An，i型硅层5Ai和p型硅层5Ap的至少一层进行悬挂键还原处理。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011149077A

公开(公告)日：2011-08-04

申请号：JP2010013142

申请日：2010-01-25

Applicant: Japan Science & Technology Agency ,  Jsr Corp ,  Jsr株式会社 ,  独立行政法人科学技術振興機構

Inventor： SHIMODA TATSUYA ,  MATSUKI YASUO ,  SHIN NAKAE

IPC: B22F9/24 ,  B22F1/00

Abstract: PROBLEM TO BE SOLVED: To provide a simple method for producing a crystalline platinum particle with a large size. SOLUTION: The method is characterized in that a platinum complex compound, acid, 2C-12C primary alcohol and aliphatic primary amine are contacted with each other in an organic solvent. The crystalline platinum particle produced by the method has a large size, and, preferably, is a single crystal platinum cube to which a specific face is substantially exclusively exposed. Thus, the platinum particle can be suitably used for an electrode material, a catalyst in chemical reaction, the electrocatalyst of a fuel cell or the like. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造具有大尺寸的结晶铂颗粒的简单方法。 解决方案：该方法的特征在于铂络合物，酸，2C-12C伯醇和脂族伯胺在有机溶剂中彼此接触。 通过该方法制造的结晶铂颗粒具有大的尺寸，并且优选地是特定面基本上独特地暴露的单晶铂立方体。 因此，铂粒子可以适合用于电极材料，化学反应中的催化剂，燃料电池的电极催化剂等。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011147914A

公开(公告)日：2011-08-04

申请号：JP2010013141

申请日：2010-01-25

Applicant: Japan Science & Technology Agency ,  Jsr Corp ,  Jsr株式会社 ,  独立行政法人科学技術振興機構

Inventor： SHIMODA TATSUYA ,  MATSUKI YASUO ,  SHIN NAKAE

IPC: B01J35/10 ,  B01J23/42 ,  B01J25/00 ,  B01J35/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing porous platinum particles with a large particle size having a significantly higher activity than conventional platinum catalysts in various reactions and excellent dispersion stability in a dispersion medium. SOLUTION: The porous platinum particles are manufactured by bringing crystalline platinum particles into contact with a complex of an amine compound and hydrogenated aluminum at 50-300°C to form composite particles composed of at least platinum and aluminum, and bringing the composite particles into contact with an acid or a base to elute the aluminum contained in the composite particles. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在各种反应中制备具有比常规铂催化剂显着更高的活性的大粒径的多孔铂颗粒的方法，并且在分散介质中具有优异的分散稳定性。 解决方案：通过使结晶铂颗粒与胺化合物和氢化铝的配合物在50-300℃下接触来形成多孔铂颗粒，以形成由至少铂和铝组成的复合颗粒，并使复合材料 颗粒与酸或碱接触以洗脱复合颗粒中所含的铝。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011102340A

公开(公告)日：2011-05-26

申请号：JP2009256826

申请日：2009-11-10

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  ITO AKIMOTO ,  OBATA TOMOHIRO ,  MATSUKI YASUO ,  AKUTSU MITSUO

IPC: C08G65/22 ,  C07D407/02 ,  C07D407/04 ,  H01B1/06 ,  H01G11/38 ,  H01G11/54 ,  H01G11/56 ,  H01M4/62 ,  H01M6/16 ,  H01M6/18 ,  H01M10/0565 ,  H01M10/0566

CPC classification number: Y02E60/12

Abstract: PROBLEM TO BE SOLVED: To provide a new compound having a high relative dielectric constant and a method for producing the same, a new polymer having a structural unit derived from the compound and a method for producing the same, and an electrolyte containing the compound or the polymer. SOLUTION: The polymer has a structural unit represented by formula (1) and the compound is represented by formula (2), wherein R 1 is a direct bond, a 1-12C divalent hydrocarbon group or a 1-12C divalent halogenated hydrocarbon group; R 2 and R 3 are each independently H, a 1-12C monovalent hydrocarbon group, a 1-12C organyloxy group or a 1-12C monovalent halogenated hydrocarbon group; m and n are each independently an integer of 0-2, provided that m+n equals 1 or 2; and p and q are each independently an integer of 0-3, provided that p+q equals an integer of 1-3. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有高相对介电常数的新化合物及其制备方法，具有衍生自化合物的结构单元的新聚合物及其制备方法和含有 化合物或聚合物。 解决方案：聚合物具有由式（1）表示的结构单元，化合物由式（2）表示，其中R 1是直接键，1-12C二价烃基 或1-12C二价卤代烃基; R 2 和R 3 各自独立地为H，1-12C一价烃基，1-12C有机氧基或1-12C一价卤代烃基; m和n各自独立地为0-2的整数，条件是m + n等于1或2; p和q各自独立地为0-3的整数，条件是p + q等于1-3的整数。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010263202A

公开(公告)日：2010-11-18

申请号：JP2010090578

申请日：2010-04-09

Applicant: Japan Science & Technology Agency ,  Jsr Corp ,  Jsr株式会社 ,  Seiko Epson Corp ,  セイコーエプソン株式会社 ,  独立行政法人科学技術振興機構

Inventor： SHIMODA TATSUYA ,  MATSUKI YASUO ,  KAWAJIRI RYO ,  MASUDA TAKASHI ,  KANEDA TOSHIHIKO

IPC: H01L21/208 ,  H01L21/316 ,  H01L21/768

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  C01B33/02 ,  C01B33/027 ,  C01B33/18 ,  C01P2004/01 ,  C01P2004/20 ,  C23C18/06 ,  C23C18/08 ,  C23C18/1208 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02623 ,  H01L21/02656 ,  H01L21/31 ,  Y10T428/24612

Abstract: PROBLEM TO BE SOLVED: To provide a pattern formation method including: a first step of arranging at least one silane compound selected from the group consisting of silicon hydride compounds and silicon halide compounds in a gap formed between a substrate and a pattern-shaped mold; and a second step of applying at least one treatment selected from a heat treatment and an ultraviolet ray radiation treatment to the arranged silane compound. SOLUTION: When the second step is carried out under an inert atmosphere or a reductive atmosphere, a pattern comprising silicon can be formed. When at least a portion of the second step is carried out under an oxygen-containing atmosphere, a pattern comprising a silicon oxide can be formed. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种图案形成方法，包括：第一步骤，将由硅氢化合物和卤化硅化合物组成的组中选出的至少一种硅烷化合物排列在形成于基板和图案形成层之间的间隙中， 形模; 以及对所配置的硅烷化合物施加从热处理和紫外线辐射处理中选择的至少一种处理的第二步骤。 解决方案：当第二步在惰性气氛或还原气氛下进行时，可以形成包含硅的图案。 当第二步的至少一部分在含氧气氛下进行时，可以形成包含氧化硅的图案。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2008260918A

公开(公告)日：2008-10-30

申请号：JP2008061189

申请日：2008-03-11

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUKI YASUO ,  TAMAKI KENTARO ,  SEKIGUCHI MANABU ,  HATTORI SEITARO ,  KATO HITOSHI

IPC: C09D183/05 ,  C09D183/02 ,  C09D183/04 ,  C09D183/08

Abstract: PROBLEM TO BE SOLVED: To provide a film-forming composition that is favorably useful in a semiconductor element required for high integration and multilayering and can have a desired relative dielectric constant with ease, in forming an insulating film. SOLUTION: The film-forming composition comprises a silicone resin that has a rational formula represented by formula (1) (H 2 SiO) n (HSiO 1.5 ) m (SiO 2 ) k (wherein n, m and k are each a number; and when n+m+k is 1, n is ≥0.05, m is >0 and ≤0.95 and k is 0-0.2) and is solid at 120°C, a hydrolysis-condensation product obtained by hydrolysis-condensation of a specific silane compound and (D) an organic solvent. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种成膜组合物，其有利地用于高集成度和多层所需的半导体元件中，并且在形成绝缘膜时可以容易地具有期望的相对介电常数。 解决方案：成膜组合物包含具有由式（1）表示的合理式（H 2 SiO）（HSiO （其中n，m和k各自为数;当n + m为0时，m + + k为1，n为≥0.05，m为> 0，≤0.95，k为0-0.2），在120℃下为固体，通过特定硅烷化合物的水解缩合获得的水解缩合物和（D ）有机溶剂。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008187133A

公开(公告)日：2008-08-14

申请号：JP2007021508

申请日：2007-01-31

Applicant: JSR CORP

Inventor： SAKAI TATSUYA ,  MATSUKI YASUO ,  TAMAKI KENTARO

IPC: H01L21/288 ,  C23C18/02 ,  G02F1/1343

Abstract: PROBLEM TO BE SOLVED: To provide a material for forming a copper thin film, which has excellent conductivity and allows a copper thin film to be formed by an application method to be used for many electronic devices easily and inexpensively; and a method of forming a copper thin film by using the material. SOLUTION: A material for forming a copper thin film contains a compound expressed by a formula shown below and a solvent. In the formula, each of R 1 through R 5 represents any of a hydrogen atom, a halogen atom, a hydrocarbon group having a carbon number of 1 to 15, a halogenated hydrocarbon group having a carbon number of 1 to 10, and an ether group having a carbon number of 1 to 10. R 1 through R 5 may be the same or different from each other. COPYRIGHT: (C)2008,JPO&INPIT

公开(公告)号：JP2008101206A

公开(公告)日：2008-05-01

申请号：JP2007244607

申请日：2007-09-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TAMAKI KENTARO ,  SAKAI TATSUYA ,  IWAZAWA HARUO ,  MATSUKI YASUO

IPC: C08G77/12 ,  C01B33/12 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a silicon dioxide precursor and a silicon dioxide precursor composition useful to form a silicon dioxide film of high purity without containing an organic component.
SOLUTION: This silicon dioxide precursor is represented by following rational formula (1): (H
2 SiO)
n (HSiO
1.5 )
m (SiO
2 )
k (1) (wherein n, m and k are numbers respectively, and when n+m+k=1, n is ≥0.5, m is >0 and ≤0.3, and k is 0 to 0.2), and is a silicone resin of a solid state at 120°C. The silicon dioxide precursor composition comprises the silicone resin and an organic solvent.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供二氧化硅前体和二氧化硅前体组合物，其用于形成高纯度的二氧化硅膜而不含有机组分。 解决方案：该二氧化硅前体由以下合理的式（1）表示：（H 2 SiO）（HSiO 1.5 ） （1）（其中n，m和k分别是数字，当n + m + k = 1时， ，n≥0.5，m> 0且≤0.3，k为0〜0.2），是120℃下的固态硅酮树脂。 二氧化硅前体组合物包含有机硅树脂和有机溶剂。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008031202A

公开(公告)日：2008-02-14

申请号：JP2006203109

申请日：2006-07-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IWAZAWA HARUO ,  MATSUKI YASUO ,  O DOUKAI

IPC: C08G77/60 ,  C07F7/02 ,  C07F7/30 ,  C07F19/00 ,  H01L21/208

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a uniform germanium-doped silicon conductive film on a substrate by a coating method under ordinary pressure, and to provide a method for producing a phosphorus atom-containing higher order silane compound therefor.
SOLUTION: A method for producing a germanium atom-containing higher order silane compound comprises irradiating a solution containing a photopolymerizable silane compound and a germanium compound with a ray having a longer wavelength than 400 nm to form the germanium atom-containing higher order silane compound. A method for forming a germanium-containing silicon film comprises coating the solution containing the germanium atom-containing higher order silane compound obtained by the above method on a substrate and heat-treating the coated substrate.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决的问题：提供通过常压涂布法在基板上形成均匀的掺锗硅导电膜的方法，并提供一种用于制备含磷原子的高级硅烷化合物的方法 。 解决方案：含锗原子的高级硅烷化合物的制造方法包括用波长比400nm长的光线照射含有光聚合性硅烷化合物和锗化合物的溶液，形成含锗原子的高级 硅烷化合物。 用于形成含锗硅膜的方法包括将通过上述方法获得的含有含锗原子的高级硅烷化合物的溶液涂布在基材上并对涂布的基材进行热处理。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007254593A

公开(公告)日：2007-10-04

申请号：JP2006080953

申请日：2006-03-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MATSUKI YASUO

IPC: C08G79/00 ,  H01L21/208 ,  H01L29/16

Abstract: PROBLEM TO BE SOLVED: To provide a film-forming method for forming a germanium film by a coating method, and to provide a germanium polymer and a process for producing the germanium polymer for use in forming the germanium film. SOLUTION: The germanium polymer is produced by a process comprising the first step of reacting a tetrahalogenated germanium, an organometallic halide represented by the formula: RQX n (wherein R is a monovalent organic group; Q denotes a germanium atom or a magnesium atom; X denotes a halogen atom; and n is 1 or 3) and lithium and/or magnesium and the second step of subjecting the reaction product produced in the first step to treatment with LiAlH 4 . The germanium film is formed by applying a solution of the germanium polymer onto a substrate surface, heating and then subjecting the coating film to treatment with heat and/or light. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供通过涂布方法形成锗膜的成膜方法，并提供锗聚合物和用于形成锗膜的锗聚合物的制造方法。 解决方案：锗聚合物通过包括使四卤代锗，由下式表示的有机金属卤化物（其中R是一价有机基团; Q 表示锗原子或镁原子; X表示卤素原子，n表示1或3）和锂和/或镁，第二步是使第一步中产生的反应产物用LiAlH 4 。 锗膜通过将锗聚合物溶液施加到基材表面上，加热然后用热和/或光进行处理来形成。 版权所有（C）2008，JPO＆INPIT