公开(公告)号：WO03015123B1

公开(公告)日：2003-11-20

申请号：PCT/US0225223

申请日：2002-08-08

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  LENZ ERIC ,  LI LUMIN

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  LENZ ERIC ,  LI LUMIN

IPC: H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32082 ,  Y10S156/916

Abstract: A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources, The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

Abstract translation: 用于处理工件的真空等离子体室包括用于与腔室中的气体电耦合并分别连接到第一和第二相对较高和低频RF源的第一和第二电极。腔室包括参考电位的壁和等离子体限制区域 与墙壁隔开。 连接到源极和电极的滤波器装置使来自第一源的电流流向第一电极，防止电流从第一电源到第二电极和第二电源的大量流动，并使电流从第二电源到 流到第一和第二电极并且防止电流从第二源到第一源的实质性流动。

公开(公告)号：WO2012018449A3

公开(公告)日：2012-04-12

申请号：PCT/US2011041524

申请日：2011-06-22

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

IPC: H01L21/205

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

Abstract: A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radio frequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

Abstract translation: 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

公开(公告)号：WO2011038344A3

公开(公告)日：2011-07-28

申请号：PCT/US2010050401

申请日：2010-09-27

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KALYANARAMAN RAJARAMANAN ,  MANI SATHYANARAYANAN ,  BHATTACHARYYA GUATAM

Inventor： DHINDSA RAJINDER ,  KALYANARAMAN RAJARAMANAN ,  MANI SATHYANARAYANAN ,  BHATTACHARYYA GUATAM

IPC: H05H1/24 ,  H05H1/34

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J2237/334

Abstract: An arrangement for performing pressure control in a plasma processing chamber comprising an upper electrode, a lower electrode, a unitized confinement ring arrangement wherein the upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region to facilitate plasma generation and confinement therein. The arrangement further includes at least one plunger configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path and a second gas conductance path to perform the pressure control, wherein the first gas conductance path is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path is formed between the lower electrode and the single unitized ring arrangement.

Abstract translation: 一种用于在等离子体处理室中执行压力控制的装置，包括上电极，下电极，单位化约束环装置，其中上电极，下电极和单位化约束环装置至少构成为围绕限制室区域 促进等离子体产生和限制。 所述装置还包括至少一个柱塞，所述至少一个柱塞构造成用于沿垂直方向移动所述单位化限制环装置，以调节第一气体传导路径和第二气体导电路径中的至少一个，以执行所述压力控制，其中所述第一气体导电路径 形成在上部电极和单元化的限制环装置之间，并且第二气体导电路径形成在下部电极和单个组合环形装置之间。

公开(公告)号：WO2010019196A3

公开(公告)日：2010-04-15

申请号：PCT/US2009004494

申请日：2009-08-06

Applicant: LAM RES CORP ,  DHINDSA RAJINDER

Inventor： DHINDSA RAJINDER

IPC: H01L21/3065 ,  H01L21/00 ,  H05H1/34

CPC classification number: H01L21/67069 ,  H01J37/32642 ,  H01J37/32724 ,  H01L21/67248

Abstract: A temperature-controlled hot edge ring assembly adapted to surround a semiconductor substrate supported in a plasma reaction chamber is provided. A substrate support with an annular support surface surrounds a substrate support surface. A radio-frequency (RF) coupling ring overlies the annular support surface. A lower gasket is between the annular support surface and the RF coupling ring. The lower gasket is thermally and electrically conductive. A hot edge ring overlies the RF coupling ring. The substrate support is adapted to support a substrate such that an outer edge of the substrate overhangs the hot edge ring. An upper thermally conductive medium is between the hot edge ring and the RF coupling ring. The hot edge ring, RF coupling ring and annular support surface can be mechanically clamped. A heating element can be embedded in the RF coupling ring.

Abstract translation: 提供了适于围绕被支撑在等离子体反应室中的半导体衬底的温控热边缘环组件。 具有环形支撑表面的衬底支撑件围绕衬底支撑表面。 射频（RF）耦合环覆盖环形支撑表面。 环形支撑表面和RF耦合环之间有一个下垫圈。 下垫圈具有导热性和导电性。 热边缘环覆盖在RF耦合环上。 基板支撑件适于支撑基板，使得基板的外边缘悬于热边缘环之上。 上热传导介质在热边缘环和RF耦合环之间。 热边缘环，射频耦合环和环形支撑表面可以机械夹紧。 加热元件可嵌入RF耦合环中。

公开(公告)号：WO2009058376A3

公开(公告)日：2009-07-16

申请号：PCT/US2008012394

申请日：2008-10-31

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  POVOLNY HENRY ,  ANTOLIK JERRY K

Inventor： DHINDSA RAJINDER ,  POVOLNY HENRY ,  ANTOLIK JERRY K

IPC: H01L21/205 ,  H01L21/203

CPC classification number: H01J37/32724 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/46 ,  G05D23/192 ,  G05D23/22 ,  H01J37/32522

Abstract: A temperature control module for a semiconductor processing chamber comprises a thermally conductive component body, one or more channels in the component body and one or more tubes concentric therewith, such that gas filled spaces surround the tubes. By flowing a heat transfer liquid in the tubes and adjusting the gas pressure in the spaces, localized temperature of the component body can be precisely controlled. One or more heating elements can be arranged in each zone and a heat transfer liquid can be passed through the tubes to effect heating or cooling of each zone by activating the heating elements and/or varying pressure of the gas in the spaces.

Abstract translation: 用于半导体处理室的温度控制模块包括导热部件主体，部件主体中的一个或多个通道以及与其同心的一个或多个管，使得气体填充的空间围绕管。 通过使传热液体流入管内并调节空间中的气体压力，可以精确地控制部件体的局部温度。 一个或多个加热元件可以布置在每个区域中并且传热液体可以穿过管子以通过激活加热元件和/或改变空间中的气体压力来实现每个区域的加热或冷却。

公开(公告)号：WO2009076568A2

公开(公告)日：2009-06-18

申请号：PCT/US2008086495

申请日：2008-12-12

Applicant: LAM RES CORP ,  BOOTH JEAN-PAUL ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  ALBAREDE LUC ,  JAFARIAN-TEHRANI SEYED JAFAR

Inventor： BOOTH JEAN-PAUL ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  ALBAREDE LUC ,  JAFARIAN-TEHRANI SEYED JAFAR

IPC: B23K10/00

CPC classification number: H01J37/32935

Abstract: An arrangement within a plasma reactor for detecting a plasma unconfinement event is provided. The arrangement includes a sensor, which is a capacitive-based sensor implemented within the plasma reactor. The sensor is implemented outside of a plasma confinement region and is configured to produce a transient current when the sensor is exposed to plasma associated with the plasma unconfinement event. The sensor has at least one electrically insulative layer oriented toward the plasma associated with the plasma unconfined event. The arrangement also includes a detection circuit, which is electrically connected to the sensor for converting the transient current into a transient voltage signal and for processing the transient voltage signal to ascertain whether the plasma unconfinement event exists.

Abstract translation: 提供了用于检测等离子体无约束事件的等离子体反应器内的布置。 该装置包括传感器，其是在等离子体反应器内实现的基于电容的传感器。 传感器在等离子体限制区域外部实现，并且被配置为当传感器暴露于与等离子体无约束事件相关联的等离子体时产生瞬态电流。 传感器具有至少一个朝向与等离子体无约束事件相关联的等离子体的电绝缘层。 该装置还包括检测电路，其与传感器电连接，用于将瞬态电流转换成瞬态电压信号，并用于处理瞬态电压信号以确定是否存在等离子体无约束事件。

公开(公告)号：WO2009006072A3

公开(公告)日：2009-03-05

申请号：PCT/US2008067881

申请日：2008-06-23

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MARAKHTANOV ALEXEI

Inventor： DHINDSA RAJINDER ,  MARAKHTANOV ALEXEI

IPC: H01L21/3065 ,  C23C16/00 ,  H01L21/00 ,  H01L21/30

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32697

Abstract: A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.

Abstract translation: 提供了一种用于在等离子体处理室中处理衬底的方法。 衬底设置在卡盘上方并由边缘环围绕。 边缘环与卡盘电隔离。 该方法包括向卡盘提供RF功率。 该方法还包括提供可调电容布置。 可调电容装置耦合到边缘环以提供到边缘环的RF耦合，导致边缘环具有边缘环电势。 该方法还包括在等离子体处理室内产生等离子体以处理基板。 衬底被处理，而可调谐电容布置被配置为使边缘环电位在处理衬底时动态地可调谐到衬底的DC电位。

公开(公告)号：WO2006026110A3

公开(公告)日：2007-04-26

申请号：PCT/US2005028571

申请日：2005-08-12

Applicant: LAM RES CORP ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  FU YUEHONG

IPC: H01L21/3065

CPC classification number: C04B35/505 ,  C04B2235/725 ,  C04B2235/728 ,  C04B2235/77 ,  C04B2235/9692 ,  H01J37/32642 ,  H01J2237/0206 ,  Y10T29/4973

Abstract: A yttria insulator ring for use in a plasma processing apparatus is provided to minimize arcing between the apparatus and a ground extension, while also increasing a mean time between cleanings (MTBC). The yttria insulator ring may be located between a ground extension and a plasma generation zone, or gap, of the chamber of the apparatus, as well as between an edge ring and the ground extension. Compared to a quartz ring, the yttria insulator ring can also provide improved semiconductor substrate uniformity because of improved RF coupling as a result of decreased reactivity and increased dielectric constant.

Abstract translation: 提供用于等离子体处理装置的氧化钇绝缘体环，以最小化装置和地面延伸部之间的电弧，同时也增加清洗之间的平均时间（MTBC）。 氧化钇绝缘体环可以位于设备的室的接地延伸部和等离子体产生区域或间隙之间，以及边缘环和接地延伸部之间。 与石英环相比，氧化钇绝缘体环也可以提供改善的半导体衬底均匀性，因为由于反应性降低和介电常数增加导致RF耦合改善。

公开(公告)号：WO2005119731A3

公开(公告)日：2006-05-26

申请号：PCT/US2005018094

申请日：2005-05-25

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  TRUSSELL DAVE

Inventor： DHINDSA RAJINDER ,  KOZAKEVICH FELIX ,  TRUSSELL DAVE

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

Abstract: A plasma processor chamber includes a bottom electrode and a top electrode assembly having a center electrode surrounded by a grounded electrode. RF excited plasma between the electrodes induces a DC bias on them. A measure of the bottom electrode DC bias controls the capacitance of a first series resonant circuit connected between the center electrode and ground. A measure of the center electrode DC bias controls the capacitance of a second series resonant circuit connected between the bottom electrode and ground.

Abstract translation: 等离子体处理器室包括底电极和顶电极组件，其具有被接地电极包围的中心电极。 电极之间的RF激发等离子体在其上引起DC偏压。 底部电极直流偏置的测量控制连接在中心电极和地之间的第一串联谐振电路的电容。 中心电极直流偏压的测量控制连接在底电极和地之间的第二串联谐振电路的电容。

公开(公告)号：WO2005111268A2

公开(公告)日：2005-11-24

申请号：PCT/US2005012221

申请日：2005-04-11

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  LENZ ERIC

Inventor： DHINDSA RAJINDER ,  LENZ ERIC

IPC: C23F1/00 ,  H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32724

Abstract: A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

Abstract translation: 等离子体处理装置包括与喷头电极热接触的加热器和与加热器热接触的温度控制的顶板，以在半导体衬底处理期间保持喷头电极的期望温度。 气体分配构件向喷头电极提供处理气体和射频（RF）功率。