公开(公告)号：JP2003282837A

公开(公告)日：2003-10-03

申请号：JP2002087478

申请日：2002-03-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MOTOYOSHI MAKOTO ,  BESSHO KAZUHIRO

IPC: H01L27/105 ,  H01L21/8246 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To reduce power consumption of a magnetic memory device at the time of write-in an MRAM by concentrating magnetic fluxes to a TMR element, and to increase degree of integration of the device by improving reliability of wiring and suppressing expansion of an occupying area of a write-in word line with respect to a wiring portion. SOLUTION: The magnetic memory device is provided with the write-in word line (first wiring) 11, a bit line (second writing) 12 three-dimensionally intersecting the word line 11, and the TMR element 13 which is electrically insulated from the word line 11, electrically connected to the bit line 12, and is constituted by putting a tunnel insulating layer 303 between ferromagnetic materials at the intersecting area of the lines 11 and 12. The word line 11 is constituted by laminating a first metallic layer 111 composed of a metal having a lower electric resistance than a high-melting point metal has and second metallic layer 112 composed of the high-melting point metal upon another and at least part of the projected portion of the TMR element 13 upon the word line 11 is composed only of the second metallic layer 112. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了通过将磁通量集中到TMR元件来降低写入MRAM时的磁存储器件的功耗，并且通过提高布线的可靠性并增加器件的集成度 抑制写入字线相对于布线部分的占用面积的扩大。 解决方案：磁存储器件具有写入字线（第一布线）11，与字线11三维相交的位线（第二写入）12和电绝缘的TMR元件13 从字线11电连接到位线12，并且通过在线11和12的交叉区域处的铁磁材料之间放置隧道绝缘层303来构成。字线11由层叠第一金属层 由具有比高熔点金属低的电阻的金属构成的第一金属层112和第二金属层112由另一个上的高熔点金属构成，并且在字线上具有TMR元件13的突出部分的至少一部分 11仅由第二金属层112构成。（C）2004，JPO

公开(公告)号：JP2003188439A

公开(公告)日：2003-07-04

申请号：JP2001388985

申请日：2001-12-21

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  MIZUGUCHI TETSUYA ,  OBA KAZUHIRO

IPC: G11C11/14 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To achieve low power consumption when a magnetic memory device is configured by enabling, for a free layer provided in a magneto-resistive effect element, the control of rotary magnetic field without technical difficulty and limitation to reduction in thickness of the free layer. SOLUTION: The magneto-resistive effect element is formed by laminating at least a ferromagnetic free layer 12, a non-magnetic layer 13 and a ferromagnetic fixed layer (not illustrated). In this magneto-resistive effect element, a value of the rotary magnetic field at the free layer 12 can be controlled by the growth of the free layer 12 up to the thickness enough to attain the continuation thereof, the formation of a mixed layer region 12b, which has extremely reduced or perfectly eliminated magnetism, to a part of the free layer 12, and substantial reduction in thickness of the free layer 12 to show its function as much as the thickness of the mixed layer region 12b. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001111131A

公开(公告)日：2001-04-20

申请号：JP28866599

申请日：1999-10-08

Applicant: SONY CORP

Inventor： IWASAKI HIROSHI ,  KATORI KENJI ,  BESSHO KAZUHIRO

IPC: G11C11/14 ,  H01H59/00 ,  H01L41/12

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic function element, in which the direction or magnetization of a magnetic thin film can be changed over with god efficiency by an electrical input, and to provide a magnetic function apparatus which uses the magnetic function element. SOLUTION: A three-dimensional structure, in which a variable-volume capacitor in a region sandwiched between an electrode 4 and an electrode 5 is contained and in which a magnetic thin film 6 coupled mechanically to the electrode 4 on one side is contained, is formed through an MEMS technique. Thereby, a magnetic function element is formed. The direction of magnetization of the magnetic thin film 6 is changed by the mechanical deformation of a structural element member 2 generated due to electrostatic force, which acts between both electrode 4, 5 when the capacitor is charged.

公开(公告)号：JP2000345324A

公开(公告)日：2000-12-12

申请号：JP15702399

申请日：1999-06-03

Applicant: SONY CORP

Inventor： IWASAKI HIROSHI ,  BESSHO KAZUHIRO

IPC: C23C14/24 ,  C23C14/30

Abstract: PROBLEM TO BE SOLVED: To stably retain the posture of a vapor depositing material even in the case the vapor depositing material is heated at a high temp. equal to or above the m.p., as to the vapor depositing material, by allowing plural foot parts to hold the part to be heated so as to be mutually made close on the side of the part to be heated and allowing it to be supported by a supporting means so as to be mutually made away as it goes toward the supporting means. SOLUTION: A vapor depositing material 11 is composed of long-length members 21 and 22 arranged so as to be mutually contacted at the tip parts 21b and 22b located in the vicinity of a filament 13 and be mutually made away as they go toward the base edge parts 21a and 22a supported by a supporting stand 12. Vapor deposition is executed in such a manner that the tip parts 21b and 22b of the long-length members 21 and 22 are heated and melted. Thus, even in the case the vapor depositing material 11 is heated at a high temp. above the m.p., the remarkable retreat of the melted part of the vapor depositing material 11 in the direction far away from the filament 13 can be suppressed. In this way, even in the case Si, or the like, whose vapor pressure about the m.p. is low is used as the vapor depositing material 11, the vapor deposition is suitably executed, and film formation can be executed with high precision.

公开(公告)号：JPH09218213A

公开(公告)日：1997-08-19

申请号：JP8524296

申请日：1996-04-08

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  IWASAKI HIROSHI

IPC: G01N27/72 ,  G01N37/00 ,  G01Q30/16 ,  G01Q60/00 ,  G01Q60/50

Abstract: PROBLEM TO BE SOLVED: To dynamically observe a generating state of a magnetic domain and an inverting state of magnetization by observing a considerably small magnetic domain of a sample while a magnetic field is impressed. SOLUTION: A sample stage 21 where a sample 21 is placed is fixed on a piezoelectric element 23. A required external magnetic field is impressed to the sample 12 by a magnetic field-impressing means 20. Coils C1 , C2 of the magnetic field-impressing means 20 are connected to independent power sources S. A supplied current from the power sources is controlled, so that the required magnetic field is impressed to the sample 12. X-, Y-direction scan circuits 25, 26 connected to the piezoelectric element 23 are controlled directly by a microcomputer 29, and a Z-direction driving circuit 87 is controlled by the microcomputer 29 directly and via a feedback circuit 28. A probe 70 and a cantilever 73 scan above the sample 12 while being oscillated by a piezoelectric oscillator 74. At this time, a change of resonating conditions because of the mutual action of a leaking magnetic field by the magnetization of a surface of the sample 12 is detected as an amplitude change or phase change. A magnetic domain is observed in this manner while the magnetic field is impressed.

公开(公告)号：JPH08321085A

公开(公告)日：1996-12-03

申请号：JP28685095

申请日：1995-10-06

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  HASHIMOTO SHUNICHI ,  IWASAKI HIROSHI

IPC: G11B21/02 ,  G11B9/00 ,  G11B9/14

Abstract: PURPOSE: To produce a microstructure element capable of very high density magnetic recording by forming ferromagnetic fine structures of nm order, to provide a recording method and an information communicating method using the microstructure element and to provide a wiring and a logical element using the microstructure element. CONSTITUTION: A thin platinum film 11 or an insulating thin film 61 of silicon dioxide is stuck on a silicon substrate 12 and ferromagnetic fine structures are arranged on the film 11 or 61 by forming fine protrusions of Ni, a Co-Cr alloy or Co each having 13-45nm diameter and 3-24nm height in the directions of arrows X, Y at about 100nm pitch to obtain a recording medium 20. Since the fine protrusions 14 are magnetized in the directions of the arrows X, Y, very high density magnetic recording is performed.

公开(公告)号：JP2013232661A

公开(公告)日：2013-11-14

申请号：JP2013128426

申请日：2013-06-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OBA KAZUHIRO ,  KANO HIROSHI ,  HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  YAMAMOTO TETSUYA ,  MIZUGUCHI TETSUYA

IPC: H01L43/08 ,  H01F10/13 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic memory device that has excellent writing characteristics by including a magnetic resistance effect element having good magnetic characteristics by suppressing degradation in the magnetic resistance change rate due to a heat treatment.SOLUTION: A magnetic memory device has a configuration to obtain a change in magnetic resistance by flowing current vertically to a film surface, and includes: a magnetic resistance effect element having a magnetization fixed layer, a tunnel barrier layer formed on the magnetization fixed layer, and a magnetization free layer formed on the tunnel barrier layer and including an amorphous ferromagnetic material having a crystallization temperature of 623 K or higher; and a word line and a bit line that sandwich the magnetic resistance effect element in a thickness direction.

Abstract translation: 要解决的问题：为了提供一种通过包含具有良好磁特性的磁阻效应元件而具有优异的书写特性的磁存储器件，其通过抑制由于热处理引起的磁阻变化率的劣化。解决方案：一种磁存储器件具有 配置，以通过垂直于膜表面流动电流来获得磁阻的变化，并且包括：具有磁化固定层的磁阻效应元件，形成在磁化固定层上的隧道势垒层和形成在磁化固定层上的无磁化层 并且包括结晶温度为623K或更高的非晶态铁磁材料; 以及在厚度方向夹着磁阻效应元件的字线和位线。

公开(公告)号：JP2013115299A

公开(公告)日：2013-06-10

申请号：JP2011261520

申请日：2011-11-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIGO YUTAKA ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  ASAYAMA TETSUYA ,  YAMANE KAZUAKI ,  UCHIDA HIROYUKI

IPC: H01L21/8246 ,  G11B5/39 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  G11C11/155 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

Abstract: PROBLEM TO BE SOLVED: To provide a memory element and a memory device which can perform a writing operation in a short time without causing writing error.SOLUTION: A memory element is constructed to include a layer structure having: a memory layer in which a magnetization direction is changed according to information; a magnetization fixed layer in which a magnetization direction is fixed; and an intermediate layer made of nonmagnetic material which is disposed between the memory layer and the magnetization fixed layer. In the magnetization fixed layer, at least two ferromagnetic layers are laminated with a coupling layer interposed therebetween. The two ferromagnetic layers are magnetically coupled to each other via the coupling layer. Each magnetization direction in the two ferromagnetic layers is inclined from a direction perpendicular to a film surface. Such a construction can effectively suppress divergence of a magnetization inversion time cased by magnetization directions being approximately parallel or antiparallel in the memory layer and the magnetization fixed layer, thereby decreasing writing error and performing a writing operation in a shorter time.

Abstract translation: 要解决的问题：提供可以在短时间内执行写入操作而不引起写入错误的存储器元件和存储器件。 解决方案：存储元件被构造为包括具有：根据信息使磁化方向改变的存储层的层结构; 磁化固定层，其中磁化方向固定; 以及设置在存储层和磁化固定层之间的由非磁性材料制成的中间层。 在磁化固定层中，至少两层铁磁性层被层叠，其间夹有耦合层。 两个铁磁层通过耦合层彼此磁耦合。 两个铁磁层中的每个磁化方向从垂直于膜表面的方向倾斜。 这样的结构能够有效地抑制由存储层和磁化固定层中的大致平行或反平行的磁化方向带来的磁化反转时间的发散，从而减少写入误差并在较短的时间内执行写入操作。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2013033881A

公开(公告)日：2013-02-14

申请号：JP2011169867

申请日：2011-08-03

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YAMANE KAZUAKI ,  HOSOMI MASAKATSU ,  OMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA ,  ASAYAMA TETSUYA ,  UCHIDA HIROYUKI

IPC: H01L21/8246 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

Abstract: PROBLEM TO BE SOLVED: To provide a storage element which can balance writing current and thermal stability.SOLUTION: A storage element comprises: a storage layer that holds information according to a magnetization state of a magnetic body; a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer; and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.

Abstract translation: 要解决的问题：提供能够平衡写入电流和热稳定性的存储元件。 解决方案：存储元件包括：存储层，其根据磁体的磁化状态保存信息; 磁化固定层，其具有作为存储在存储层中的信息的参考的磁化; 以及由设置在所述存储层和所述磁化固定层之间的非磁性体形成的绝缘层。 通过使用在存储层，绝缘层和磁化固定层的层构造的层叠方向上流动的电流发生的自旋转矩磁化反转来反转存储层的磁化来存储信息，以及 存储层小于磁化方向同时变化的尺寸。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012151213A

公开(公告)日：2012-08-09

申请号：JP2011007666

申请日：2011-01-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： UCHIDA HIROYUKI ,  HOSOMI MASAKATSU ,  BESSHO KAZUHIRO ,  OMORI HIROYUKI ,  HIGO YUTAKA ,  ASAYAMA TETSUYA ,  YAMANE KAZUAKI

IPC: H01L27/105 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: PROBLEM TO BE SOLVED: To provide a storage device which can improve heat stability without increasing write current and prevent resistance increase during microfabrication of a memory layer.SOLUTION: A storage device comprises: a storage layer 17, which has magnetization perpendicular to a film surface, and in which a magnetization direction is changed corresponding to information; a magnetization fixed layer 15 having magnetization perpendicular to the film surface for serving as a reference for information stored in the storage layer; and an insulation layer 16 of a nonmagnetic material provided between the storage layer and the magnetization fixed layer. Information is recorded when spin-polarized electrons are injected in a lamination direction to change the magnetization direction of the storage layer, where an effective amplitude of a demagnetizing field applied to the storage layer is to be lower than an amplitude of saturation magnetization of the storage layer. Accordingly, heat stability can be improved without increasing write current. Further, a ferromagnetic layer included in the storage layer 17 employs CoFeB as a base material and a corrosion-resistant element is added to the base material. Accordingly resistance increase during microfabrication of the storage layer is prevented.

Abstract translation: 要解决的问题：提供一种可以在不增加写入电流的情况下提高热稳定性并且防止在存储层的微细加工期间的电阻增加的存储装置。 解决方案：存储装置包括：存储层17，其具有垂直于膜表面的磁化，并且其中磁化方向根据信息而改变; 具有垂直于膜表面的磁化的磁化固定层15，用作存储在存储层中的信息的参考; 以及设置在存储层和磁化固定层之间的非磁性材料的绝缘层16。 当沿层叠方向注入自旋极化电子时，记录信息以改变存储层的磁化方向，其中施加到存储层的消磁场的有效幅度应低于存储层的饱和磁化强度 层。 因此，可以在不增加写入电流的情况下提高热稳定性。 此外，包含在存储层17中的铁磁层使用CoFeB作为基材，并且在基材中添加耐腐蚀元素。 因此防止了存储层的微细加工期间的电阻增加。 版权所有（C）2012，JPO＆INPIT