公开(公告)号：WO03036734A2

公开(公告)日：2003-05-01

申请号：PCT/JP0210609

申请日：2002-10-11

Applicant: SONY CORP ,  OHBA KAZUHIRO ,  HAYASHI KAZUHIKO ,  KANO HIROSHI ,  BESSHO KAZUHIRO ,  MIZUGUCHI TETSUYA ,  HIGO YUTAKA ,  HOSOMI MASANORI ,  YAMAMOTO TETSUYA ,  NARISAWA HIROAKI ,  SONE TAKEYUKI ,  ENDO KEITARO ,  KUBO SHINYA

Inventor： OHBA KAZUHIRO ,  HAYASHI KAZUHIKO ,  KANO HIROSHI ,  BESSHO KAZUHIRO ,  MIZUGUCHI TETSUYA ,  HIGO YUTAKA ,  HOSOMI MASANORI ,  YAMAMOTO TETSUYA ,  NARISAWA HIROAKI ,  SONE TAKEYUKI ,  ENDO KEITARO ,  KUBO SHINYA

IPC: G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08 ,  C23C14/14 ,  H01F10/16 ,  H01L27/105

CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C2029/5002 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/302 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetoresistance effect element comprising a ferromagnetic tunnel coupling with a tunnel barrier layer sandwiched by at least a pair of ferromagnetic layers wherein a magnetization free layer constituted of one of the ferromagnetic layers is made of a single layer of a material having an amorphous or crystallite structure, or a material layer the main part of which has an amorphous or crystallite structure. This magnetoresistance effect element provides excellent magnetic-resistance characteristics. A magnetic memory element and a magnetic memory device comprising it as the memory element improve both characteristics of write and read.

Abstract translation: 磁阻效应元件包括与由至少一对铁磁层夹持的隧道势垒层耦合的铁磁隧道，其中由一个铁磁层构成的磁化自由层由具有无定形或微晶结构的材料的单层制成 ，或其主要部分具有无定形或微晶结构的材料层。 该磁阻效应元件提供优异的磁阻特性。 磁存储器元件和包括其作为存储元件的磁存储器件改善了写入和读取的特性。

公开(公告)号：DE112017001776T5

公开(公告)日：2018-12-13

申请号：DE112017001776

申请日：2017-02-21

Applicant: SONY CORP

Inventor： UCHIDA HIROYUKI ,  HOSOMI MASANORI ,  OHMORI HIROYUKI ,  BESSHO KAZUHIRO ,  HIGO YUTAKA

IPC: H01L21/8246 ,  H01F10/14 ,  H01F10/16 ,  H01L27/105 ,  H01L29/82 ,  H01L43/08

Abstract: [Problem] Es möglich zu machen, die Magnetowiderstandsänderungsrate weiter zu verbessern, ohne die Zuverlässigkeit als ein Element zu verschlechtern.[Lösung] Bereitgestellt ist ein magnetoresistives Element, das mit Folgendem ausgestattet ist: einer Speicherungsschicht, wobei sich die Magnetisierungsrichtung entsprechend Informationen ändert; einer ersten Schicht mit fester Magnetisierung, die unter der Speicherungsschicht bereitgestellt ist und die Magnetisierungsrichtung senkrecht zu einer Filmoberfläche aufweist, d. h. eine Referenz zu den in der Speicherungsschicht gespeicherten Informationen; einer zweiten Schicht mit fester Magnetisierung, die über der Speicherungsschicht bereitgestellt ist und die Magnetisierungsrichtung senkrecht zur Filmoberfläche aufweist, d. h. die Referenz zu den in der Speicherungsschicht gespeicherten Informationen, wobei die Magnetisierungsrichtung entgegengesetzt zu der der ersten Schicht mit fester Magnetisierung ist; einer ersten Zwischenschicht, die zwischen der ersten Schicht mit fester Magnetisierung und der Speicherungsschicht bereitgestellt ist; und einer zweiten Zwischenschicht, die zwischen der zweiten Schicht mit fester Magnetisierung und der Speicherungsschicht bereitgestellt ist. Die Speicherungsschicht wird durch Laminieren einer ersten Schicht aus einem magnetischen Material, einer Schicht aus einem nicht magnetischen Material und einer zweiten Schicht aus einem magnetischen Material in dieser Reihenfolge konfiguriert und die erste Schicht aus einem magnetischen Material oder die zweite Schicht aus einem magnetischen Material weist die Magnetisierungsrichtung parallel zur Filmoberfläche auf.

公开(公告)号：DE60021335D1

公开(公告)日：2005-08-25

申请号：DE60021335

申请日：2000-10-25

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  IWASAKI YOH

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

公开(公告)号：DE60021335T2

公开(公告)日：2006-04-20

申请号：DE60021335

申请日：2000-10-25

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  IWASAKI YOH

IPC: G11C11/14 ,  G11C11/16 ,  G11C11/15 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

公开(公告)号：EP1429341A4

公开(公告)日：2007-07-18

申请号：EP02767969

申请日：2002-09-18

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  KANO HIROSHI

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

CPC classification number: G11C11/16

Abstract: A magnetic memory device having a wiring current density the upper limit of which can be increased without greatly changing the materials and the structure so as to be adapted to higher integration of memory elements constituting the magnetic memory device and to microminiaturization of the wiring. Control is made so that the current for producing a magnetic field is made to flow bidirectionally through the wiring for producing a recording auxiliary magnetic field along the hard magnetization axis in the memory area of a magnetoresistance effect memory device. As a result, the direction in which the current flows is not fixed only to one, and therefore degradation and disconnection due to electromigration hardly occur, the reliability is enhanced, and high density is realized.

公开(公告)号：EP1494295A4

公开(公告)日：2009-07-08

申请号：EP03745971

申请日：2003-04-08

Applicant: SONY CORP

Inventor： HOSOMI MASANORI ,  MIZUGUCHI TETSUYA ,  OHBA KAZUHIRO ,  BESSHO KAZUHIRO ,  YAMAMOTO TETSUYA ,  KANO HIROSHI

IPC: B60S5/00 ,  B21D1/12 ,  G01R33/09 ,  G11C11/15 ,  H01F10/16 ,  H01F10/187 ,  H01F10/30 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  G11B5/39

CPC classification number: G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3277 ,  H01L27/228 ,  H01L43/10

Abstract: Reading characteristics, as well as writing characteristics, are improved by applying a more-novel-than-ever material to a ferromagnetic layer. A magnetoresistance effect element comprising a pair of ferromagnetic layers facing each other via an intermediate layer and being able to change reluctance by running current vertically to a film surface, wherein at least one of the ferromagnetic layers includes a ferromagnetic material containing Fe, Co and B. The ferromagnetic material preferably contain FeaCobNicBd (in the formula, a, b, c and d denote atomic %. 5≤a≤45, 35≤b≤85, 0

公开(公告)号：DE60229864D1

公开(公告)日：2008-12-24

申请号：DE60229864

申请日：2002-09-18

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  KANO HIROSHI

IPC: G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

Abstract: A magnetic memory device is capable of raising the upper limit of the current density of wiring, without significantly changing the material, structure, and the like, in order to deal with higher integration of storage elements constituting the magnetic memory device and miniaturization of wiring. With respect to wiring for generating a recording auxiliary magnetic field in the direction of the hard magnetization axis of a storage area of each of the magnetoresistance-effect storage elements, current for generating the magnetic field is controlled to flow bidirectionally. Thus, the current is not fixed in one direction. Consequently, deterioration and breaking due to electromigration is less likely to occur, and increases in the reliability and in the level of density can thus be realized.

公开(公告)号：DE69923386T2

公开(公告)日：2005-12-22

申请号：DE69923386

申请日：1999-02-11

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  IWASAKI YOH

IPC: G11C11/22 ,  G11C11/56 ,  H01L29/66 ,  H01L43/08 ,  G11C11/02

Abstract: An element that is able to control magnetization without applying a magnetic field from outside. A magnetized area formed of a ferromagnetic material is split by a spacer area of a composite material including a magnetic material and a semiconductor material. A stimulus is applied from outside to the spacer area to change the magnetic interaction between split magnetized areas to control the magnetization of the magnetized areas. Alternatively, a layered assembly made up of an electrically conductive layer containing an electrically conductive material and plural magnetic layers is provided so that the electrically conductive layer is arranged between the magnetic layers. The current is caused to flow through the electrically conductive layer to change the magnetic coupling state between the magnetic layers to control the direction of magnetization between the magnetic layers.

公开(公告)号：DE69923386D1

公开(公告)日：2005-03-03

申请号：DE69923386

申请日：1999-02-11

Applicant: SONY CORP

Inventor： BESSHO KAZUHIRO ,  IWASAKI YOH

IPC: G11C11/22 ,  G11C11/56 ,  H01L29/66 ,  H01L43/08 ,  G11C11/02

Abstract: An element that is able to control magnetization without applying a magnetic field from outside. A magnetized area formed of a ferromagnetic material is split by a spacer area of a composite material including a magnetic material and a semiconductor material. A stimulus is applied from outside to the spacer area to change the magnetic interaction between split magnetized areas to control the magnetization of the magnetized areas. Alternatively, a layered assembly made up of an electrically conductive layer containing an electrically conductive material and plural magnetic layers is provided so that the electrically conductive layer is arranged between the magnetic layers. The current is caused to flow through the electrically conductive layer to change the magnetic coupling state between the magnetic layers to control the direction of magnetization between the magnetic layers.

公开(公告)号：DE10302375A1

公开(公告)日：2003-07-24

申请号：DE10302375

申请日：2003-01-22

Applicant: SONY CORP

Inventor： HIGO YUTAKA ,  BESSHO KAZUHIRO ,  MIZUGUCHI TETSUYA ,  YAMAMOTO TETSUYA ,  HOSOMI MASANORI ,  OHBA KAZUHIRO ,  KANO HIROSHI

IPC: G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L21/82 ,  G11C11/15

Abstract: Magneto-resistive tunnel effect element comprises a film structure having two ferromagnetic material layers (11, 12) with an embedded tunnel barrier layer (13) produced by oxidizing a conducting metal layer. The metal layer contains a metal as the main component and a further element as additional material. An Independent claim is also included for a process for the production of the element. Preferred Features: The metal component is aluminum. The further element is B, Li, Mg, Si, Ca, K, Sc, Be, Ti, Sr, C, P or S in an amount of less than 1 atom %. The conducting layer is produced by a vapor phase method.