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公开(公告)号：JP2006032437A
公开(公告)日：2006-02-02
申请号：JP2004205240
申请日：2004-07-12
Inventor： HIRATA SHOJI , IMANISHI DAISUKE
CPC classification number: H01S5/2231 , G11B7/127 , H01S5/024 , H01S5/0655 , H01S5/204 , H01S5/3054 , H01S5/3211 , H01S5/3213 , H01S5/32325
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser whose temperature characteristics and light emission efficiency can be improved by suppressing an overflow of electrons in a p-type clad layer.
SOLUTION: The p-type clad layer 17 is ≤0.7 μm thick and decreases in series resistance and discharged heat resistance as much as a decrease in thickness and the degree (Δa/a) of mean crystal grating unconformity can dynamically be made larger than +3×10
-3 . Consequently, zinc as a p-type impurity can be prevented from being activated and diffused up to an active layer 15 to make the active layer 15 operate as a non-luminescence center, and the dosage of zinc can be increased to 2×10
18 /cm
3 to 3×10
18 /cm
3 . Consequently, carrier density in the p-type clad layer 17 is increased to decrease the series resistance, and the Fermi level of the p-type clad layer 17 is sloped to suppress the generation of a leakage current caused by an overflow of electrons.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 解决的问题：提供一种通过抑制p型覆盖层中的电子溢出来提高其温度特性和发光效率的半导体激光器。
解决方案：p型覆盖层17的厚度≤0.7μm，串联电阻和放电耐热性降低，厚度的减小以及平均晶格光栅不整合度（Δa/ a）可以动态地得到 大于+ 3×10
-3 。 因此，可以防止作为p型杂质的锌被活化并扩散到有源层15，使有源层15作为非发光中心进行工作，锌的用量可以增加到2×10 < SP> 18 / cm 3 至3×10 18 / cm 3 。 因此，增加p型覆盖层17中的载流子浓度以降低串联电阻，并且p型覆盖层17的费米能级倾斜以抑制由电子溢出引起的漏电流的产生。 版权所有（C）2006，JPO＆NCIPI -
公开(公告)号：JP2004015666A
公开(公告)日：2004-01-15
申请号：JP2002169160
申请日：2002-06-10
Inventor： INOUE YOSHIHIKO , INAGUMA TERUYUKI , HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To provide a highly efficient speaker system capable of performing signal reproducing faithful to an input signal.
SOLUTION: A speaker system is provided with a diaphragm 2 as a sound generating source, and a linear pulse motor 11 having a minimum moving unit and vibrating the diaphragm 2 at a quantized amplitude based on the minimum moving unit. The speaker system 1 reproduces the vibration of the diaphragm 2 faithful to an input signal by controlling the vibration of the diaphragm 2 at the quantized amplitude that the minimum moving unit of the linear pulse motor 11 is 1 bit and digitally driving the diaphragm 2.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2003152280A
公开(公告)日：2003-05-23
申请号：JP2001348751
申请日：2001-11-14
Applicant: SONY CORP
Inventor： KITAMURA TOMOYUKI , HIRATA SHOJI
IPC: H01S5/223
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is provided with a wide current injection stripe, hardly produces double peaks in a far-field pattern, and has a high optical output. SOLUTION: This semiconductor laser device has the same structure as a conventional one except that its current injection stripe 41 is different in a plan view from that of a conventional one. The width S1 of the center part of the current injection stripe 41 is equal to that of a conventional current injection stripe, whereas the width S2 of the projection end face 40a of the current injection stripe 41 is smaller than the width S1 . That is, the stripe 41 is gradually reduced in width or tapered at a taper angle of θ toward the projection end face 40a from the point distant from the end face 40a by a distance of L. That is, the current injection stripe 41 is composed of a rectangular stripe 42 which is 20 μm or above and constant in width on the plant in parallel with the surface of a substrate and a tapered stripe 43 which is continuously joined to the stripe 43 and gradually reduced in width toward the projection end face 40a.
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公开(公告)号：JP2003060303A
公开(公告)日：2003-02-28
申请号：JP2001247712
申请日：2001-08-17
Inventor： SHIOSAKI MASATAKA , HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser that is resistant to external feedback noise, can satisfactorily correct or reduce astigmatic differences, can be reduced in operation current, and stably oscillates at high-temperature output time, and to provide a method of manufacturing the laser.
SOLUTION: In this self-pulsation semiconductor laser, the width of the central waveguide stripe of a stripe section 107 is fixed and the width (ridge separation width) W2 of the recessed section between ridges at the central part of the stripe section 107 (central part of a resonator) is set to a narrow width. In addition, the ridge separation width W2' near the end face of the laser 100 is set to a width broader than the separation width W2 at the central part and light guide layers 109a-109c, which function as channel stoppers at the manufacturing time are selectively formed in the bottom sections of the ridges of the stripe section 107 and sidewall ridge sections 108a and 108b on both sides of the section 107, respectively.
COPYRIGHT: (C)2003,JPOAbstract translation: 要解决的问题：为了提供耐外部反馈噪声的半导体激光器，可以令人满意地校正或减小散光差异，可以降低工作电流，并在高温输出时稳定地振荡，并提供制造方法 激光。 解决方案：在这种自脉动半导体激光器中，条状部分107的中心波导条的宽度是固定的，并且条形部分107的中心部分的脊之间的凹部的宽度（脊分离宽度）W2 谐振器的一部分）被设置为窄的宽度。 此外，激光器100的端面附近的脊分离宽度W2'设定为宽于中央部的分离宽度W2的宽度，在制造时间作为通道阻塞的光导层109a-109c为 分别选择性地形成在条形部分107的脊部的底部和侧壁部分108a和108b的两侧。
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公开(公告)号：JP2001244567A
公开(公告)日：2001-09-07
申请号：JP2000053763
申请日：2000-02-29
Applicant: SONY CORP
Inventor： NARUI HIRONOBU , ABE HIROAKI , OKANO NOBUMASA , HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To improve reduction of half-width (θ//) in the horizontal direction of a far field pattern by current flow, in an AlGaAs based ion implantation type gain guide laser light emitting device which is formed by using a so-called off substrate. SOLUTION: In a semiconductor laser light emitting device 1 having an AlGaAs based ion implantation type gain guide laser structure which is formed on a substrate 11 wherein a substrate surface 11S has an inclination to a crystal face of a crystal constituting the substrate, a P-type clad layer 14 includes zinc whose concentration is at least 8×1017/cm3 and at most 1.5×1018/cm3, and a P-type cap layer 15 contains zinc whose concentration is at least 1×1019/cm3 and at most 1×1020/cm3.
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Patent Agency Ranking
公开(公告)号：JP2001244551A
公开(公告)日：2001-09-07
申请号：JP2000051626
申请日：2000-02-28
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To certainly cause a pulsation laser to perform pulsation operation, to facilitate its design and manufacture, and to increase the reliability and yield rate. SOLUTION: A semiconductor lamination structure 5 having a first conductivity type first clad layer 2, an active layer 3, and a second conductivity type second clad layer 4 is constituted. On the current injecting region of the structure 5, a second conductivity type electrode contact layer 6 is formed. Covering and bridging this layer 6 and the second layer 4, a first electrode 11 is attached. The first electrode 11 is brought into ohmic contact with the layer 6, and is brought into contact with the layer 4 forming Schottky barriers. Phototransistors containing these barriers SB are arranged on both outsides of the active region 3a of the active layer 3 interposing the active region region 3a between. The phototransistors are switched by irradiation with a laser beam and pulsation operation is performed.
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公开(公告)号：JP2001127381A
公开(公告)日：2001-05-11
申请号：JP30456799
申请日：1999-10-26
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To provide a gain-guide-type semiconductor laser element that is optimum as a light source such as an optical pickup and is suited for high output. SOLUTION: A gain-guide-type semiconductor laser element 40 is provided with the same configuration as a conventional semiconductor laser element excluding the configuration of an n-side electrode. In the element, an n-side electrode 42 is divided into three electrode, namely an n-side current 43B immediately below a current injection region and n-side electrodes 42A and 42C being provided under a current-narrowing region at both the sides. When the three n-side electrodes 42A-42C are allowed to conduct electricity as one n-side electrode 42, and a forward current is allowed to flow between a p-side electrode 28 and the n-side electrode 42, the same laser operation state as the conventional semiconductor laser element results. When the n-side electrode 42B immediately below the current injection region is turned off and a forward current is allowed to flow between the n-side electrodes 42A and 42C and the p-side electrode 28 at both the sides, a current distribution changes and is dispersed farther in a crosswise direction, thus allowing a waveguide state to be nearly equipment to the state where a stripe width W has been spread and angle of radiation θ" grows large.
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公开(公告)号：JP2001036193A
公开(公告)日：2001-02-09
申请号：JP20489599
申请日：1999-07-19
Applicant: SONY CORP
Inventor： KITAMURA TOMOYUKI , HAMAGUCHI YUICHI , HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser having a constitution which stabilizes NFP. SOLUTION: This semiconductor laser 10 has a double-heterojunction multiplayer structure of a 1st buffer layer 14, a 2nd buffer layer 16, an n-type clad layer 18, an active layer/guide layer 20, a p-type clad layer 22, and a p-type cap layer 24 on a substrate 12. The upper part of the p-type clad layer 22 and the p-type cap layer 24 are formed as a ridge-shaped wide stripe having a stripe width w of 100 mm, and current non-injection regions 26 are formed on both the sides of the ridge-shaped wide stripe. In the upper pat of the p-type cap layer 24, thin belt-like current non-injection regions 28 extend parallel to the border line of the current noninjection regions 26. When a current is injected, in this semiconductor laser device 10, the carrier density in a part 34 in the active layer 20 directly below the current non-injection regions 28 provided in the stripe is lower than that in the other parts. Consequently, a gain distribution is generated in the active layer 20 and a lateral mode is confined, so that NFP becomes stable.
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公开(公告)号：JPH11339376A
公开(公告)日：1999-12-10
申请号：JP14443298
申请日：1998-05-26
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To provide a disk permitting to adjust a relation between registered timer reservation information and timer reservation information recorded on a disk side by reading the timer reservation signal from a timer reservation information storage means, and executing the timer reservation based on the timer reservation information signal and a control signal reproduced by a timer reservation information reproducing means. SOLUTION: Based on the output reproduced by an optical head 4 from a user's data recording region of an optical disk 1, a system controller 14 judges whether or not timer reservation is registered on the optical disk 1. Namely, it judges whether or not a timer reservation information signal and a control signal, which indicates whether execution of the timer reservation by the timer reservation information signal stored in a timer reservation information storage means is accepted or inhibited, are recorded in the user's data recording region of the optical disk 1, and if yes, namely, when it is an exclusive reservation, the reservation is executed only according to the reservation recorded on the disk.
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公开(公告)号：JPH11330612A
公开(公告)日：1999-11-30
申请号：JP12722598
申请日：1998-05-11
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser which is capable of reducing return light noises to an irreducible minimum, when it is used as a light source for an optical disk device and an optical disk device equipped with a semiconductor laser as a light source. SOLUTION: A semiconductor laser is equipped with an active layer 4 sandwiched between an N-side clad layer 3 and a P-side clad layer 5, wherein a part of the P-side clad layer 5,100 nm or below apart from its interface with the active layer 4, is doped with an impurity such as Zn at a does between 1×10 cm and the doping saturation concentration, and a region of the P-side clad layer 5 ranging from its interface with the active layer 3 to the prescribed distance of 100 nm or below is kept undoped. The N-side clad layer 3 is subjected to the same process with the P-side clad layer 5, where the N-side clad layer 3 is doped with an N-type impurity such as Se at a does above 5×10 cm and below the doping saturation concentration. In addition, the active layer 4 has a multiple quantum well structure whose number of well layers is five or above.
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