公开(公告)号：JPH0426130A

公开(公告)日：1992-01-29

申请号：JP13074790

申请日：1990-05-21

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  NAKAMURA FUMIHIKO

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737

Abstract: PURPOSE:To obtain a compound semiconductor device of a vertical structure having excellent self-alignment and high reliability by differentiating second compound semiconductor from group V element of first and third compound semiconductors, and forming first and second overhangs by using the difference of etching properties thereof. CONSTITUTION:An etching mask layer 5 is formed on a part to become an operating region on a third compound semiconductor layer 3 of an uppermost layer, a first etching step for selectively etching the third semiconductor is conducted to effectively expose the surface of second compound semiconductor 2. Then, a second etching step for etching the semiconductor 2 is employed, a first overhang 6 having a width W is formed, and first semiconductor 1 is externally exposed. Further, a third etching step is conducted with an etchant used in the first step, and a second overhang 7 having a width W2 is formed at the edge of the semiconductor 2. Then, an electrode conductive layer is deposited vertically from above on the entire surface.

公开(公告)号：JPH0298937A

公开(公告)日：1990-04-11

申请号：JP25154988

申请日：1988-10-05

Applicant: SONY CORP

Inventor： KOBAYASHI TOSHIMASA ,  KAWAI HIROHARU

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737

Abstract: PURPOSE:To obtain a high-performance transistor whose base thickness is thin and whose device size is reduced by a method wherein a compound semiconductor layer whose etching characteristic is different from that of a base region and whose band gap is large with reference to the base region is formed in a part near, or coming into contact with, the base region in an emitter region. CONSTITUTION:In an emitter region 34, a compound semiconductor layer (an n-GaInP layer) 25 whose band gap is large with reference to a base region and whose etching characteristic is different is formed in a part near, or coming into contact with, a base region 35. As a result, the base region 35 cannot be etched in a selective etching process to be executed when a base-electrode extraction region is formed. Accordingly, the sufficiently thin (500Angstrom or below) base region 35 can be formed. Since a thickness of the base region 35 is maintained at a thickness during its growth, an increase in a parasitic resistance (an external base resistance) is small. In addition, since the emitter region can be etched without affecting the base region thanks to the compound semiconductor layer 25, an emitter size d2 can be reduced substantially when the etching time of the compound semiconductor layer 25 is controlled.

公开(公告)号：JPH01215065A

公开(公告)日：1989-08-29

申请号：JP4110188

申请日：1988-02-24

Applicant: SONY CORP

Inventor： KAWAI HIROHARU ,  TAIRA KENICHI ,  KOBAYASHI TOSHIMASA

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/205 ,  H01L29/72 ,  H01L29/737

Abstract: PURPOSE:To increase working speed by forming a semiconductor layer having a band gap larger than an emitter region or a collector region and an external base region between the emitter or collector region and the external base region. CONSTITUTION:An external base 56 and an emitter region 49 are shaped while the side faces of one sides thereof are faced oppositely, a Ga0.52In0.48P layer 50 having a band gap Eg larger than these regions 56 and 49 is formed between the external base region 56 and the emitter region 49 in the side faces of the regions 56 and 49, and buffer layer 42 composed of semi-insulating AlGaAs is shaped under the external base region 56 and a sub-emitter region 47. Since an intrinsic base region 59 and a collector region 58 in width W2 (