Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of reducing the quantity of polishing for flattening a copper film formed to fill a hole in an insulating film, and occurrence of unpolished portion, and dishing and erosion due to excessive polishing can be prevented. SOLUTION: The manufacturing method for a semiconductor device comprises a first process for forming a hole 13 in an insulating film 12 on a substrate 11, a second process for forming a seed metal layer 15 on the insulating film 12 to cover an inner wall of the hole 13, a third process for removing the seed metal layer 15 formed over the insulating film 12 while leaving the seed metal layer 15 formed on the inner wall of the hole 13, a fourth process for embedding a copper film 17 in the hole 13 by selectively growing the copper film 17 on the seed metal layer 15 with plating, and a fifth process for removing the copper film 17 protruded from the hole 13 to flatten the device. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To improve high frequency characteristic and realize miniaturization and low cost. SOLUTION: A plurality of unit wiring layers constituted of insulating layers which have passive elements or the like in a part and pattern wirings are laminated on a dummy board. This high frequency circuit block member 2 which is formed by being exfoliated from the dummy board, and in which main surfaces of the unit wiring layers are flattened respectively, is mounted on a mother board 3. The passive elements and the pattern wirings which are to be formed on main surfaces of the respective unit wiring layers in the high frequency circuit block member can be formed precisely, high frequency characteristic is improved, and the high frequency circuit block member 2 does not need a base board, so that miniaturization and low cost are realized. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To increase the processing speed of a multichip circuit module and to improve the reliability of the module by forming fine circuit patterns in multilayered wiring sections at high densities with high accuracy and, in addition, reducing the thickness of the module and shortening the wiring lengths of semiconductor chips. SOLUTION: A multilayered wiring section 2 is constituted by stacking unit wiring layers 8-12 upon another in a state where upper wiring layers are stacked upon the flattened surfaces of lower wiring layers and connecting the layers 8-12 to each other in a via-on-via structure. In addition, the thicknesses of semiconductor chips 6 mounted on the wiring sections 2 are reduced by polishing the chips 6 together with a sealing resin layer 7.
Abstract:
PROBLEM TO BE SOLVED: To accurately reduce the thickness, size of a package and the cost. SOLUTION: The substrate unit for a high-frequency module comprises a base substrate 2 having multiple insulating layers and multiple wiring layers alternately formed on both main surfaces of a base substrate 5, and a build-up forming surface 3 formed on one of both main surfaces flattened by polishing; and a high-frequency circuit 4 having multiple dielectric insulating layers and wiring parts alternately build up on the surface 3 of the substrate 2, and a wiring pattern having a passive element formed with a wiring part.
Abstract:
PROBLEM TO BE SOLVED: To reduce the influence of parasitic capacitance on passive elements of a wiring substrate layer and to sophisticate and reduce the area and the size of the device. SOLUTION: The high-frequency module device is provided with a base substrate 2 which has a third pattern wiring layer 17 on its major surface, dielectric insulating layers 30, 31 and 32 which are formed by applying a dielectric insulating material to the base substrate 2 by a spin coat method, and high-frequency device layers 4 which have passive elements such as an inductor 25 formed on the dielectric insulating layers 30, 31 and 32 by thin film deposition. A thick part 36 where the thickness is partly larger is formed in the second dielectric insulating layer 31 by placing a flow inhibiting part 33 which inhibits the flow of the dielectric insulating material on the first dielectric layer 30. An inductor 25 is formed on the thick part 36 of the second dielectric insulating layer 31.
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a capacitor element whose formation process is simplified and which can be easily formed without much waste at low costs, has high insulation and favorable yield and can be easily regulated during formation, a method of forming a composite thin film element, a wiring board and a module board. SOLUTION: A method of forming a capacitor element or a composite thin film element including the same comprises steps of forming a lower electrode 3 on a substrate 1, forming a valve metal film 11 in a predetermined pattern on the lower electrode 3, forming an opening mask 21 having an opening 71 for forming a desired anodic oxide film 12 on the valve metal film 11, forming the anodic oxide film 12 by anodizing the valve metal film 11 in the opening 71 by using the lower electrode 3 as an anode, removing the opening mask 21, patterning the lower electrode 3, and forming an upper electrode 6 on the upper surface of the anodic oxide film 12. There are also provided a wiring board and a module board.
Abstract:
PROBLEM TO BE SOLVED: To provide an optical transmitting and receiving device which is able to transmit and receive an optical signal via an optical transmission lines such as optical fiber and miniaturized and made thinner. SOLUTION: A 1st optical signal L1 having been propagated in an optical transmission line 1 is made incident on a 1st optical waveguide 21 from one end face 21a thereof. The 1st incident optical signal L1 is propagated in the 1st optical waveguide 21, and reaches an end face 21b which is the other end face, and reflected here, and received by a light receiving part 15. On the other hand, the 2nd optical signal L2 emitted from a light emitting part 12 is made incident to a 2nd optical waveguide 22 provided inside the 1st optical waveguide 21. The 2nd optical signal L2 is propagated in the 2nd optical waveguide 22, and its optical path is changed in the direction of the optical transmission line 1 by an optical path conversion mirror 23, and the signal is further propagated in the 2nd optical waveguide 22 and led to the optical transmission line 1.
Abstract:
PROBLEM TO BE SOLVED: To suppress higher order mode propagation, to suppress waveguide loss and to increase optical output when the light from a light emitting element of an end face light transmission type is subjected to end face coupling at the incident end face of an optical waveguide. SOLUTION: The core end face portion at the incident end face of the optical waveguide WG1 is formed as a planoconvex surface part 4. While a laser beam emitted from the active layer 11 of the light emitting element 10 has spreading components to a certain extent in a horizontal direction and a vertical direction. The horizontal components among these components are converged by the lens effect of the planoconvex surface part 4 and are eventually propagated in the state of a small incident angle to parallel light beams or at the boundary between a core 3 and a clad 2, i.e., lower order mode propagation is eventually made possible. The planoconvex surface part 4 may be formed by anisotropic etching via an etching mask having a similar edge profile. When the core end face is nearly a spherical surface, the vertical components in addition to the horizontal components are converged as well.
Abstract:
PROBLEM TO BE SOLVED: To decrease the crosstalks between optical waveguides formed in congestion. SOLUTION: The portions exclusive of the light incident ends and light exit ends of the individual optical waveguides consisting of cores 4p composed of a high-polymer material and clads 6 composed of the high-polymer material enclosing the same are enclosed with light absorption layers 8. Even if scattered light is radiated from the certain optical waveguide, this light is absorbed by the light absorption layers 8 and is, therefore, not coupled to the other optical waveguides. The clads 6 are formed by integrally patterning lower clad layers 3p and upper clad layers 5p holding the tops and bottoms of the cores. The light absorption layers 8 comprise a lower light absorption layer 2 and an upper light absorption layer 7 holding the tops and bottoms of the clads 6. When a semiconductor laser beam of a near IF region is assumed as propagation light, the cores 4p and the clads 6 may be respectively composed of the chain org. high polymer and the light absorption layers 8 of the material mainly composed of a cyclic org. high polymer.
Abstract:
PROBLEM TO BE SOLVED: To make a nozzle pitch fine by providing a pressurizing means giving pressure via a diaphragm which is composed of a filmy first diaphragm forming layer consisting of material having a specific Young's modulus, and a second diaphragm forming layer having a width and a length which are less than those of a pressurizing chamber. SOLUTION: In an ink jet printing head 10 of an ink jet printer, a base stand 33 to which a plurality of pressure chambers 32 are provided and a diaphragm 34 are stuck onto an orifice plate 31, and a plurality of piezo-electric elements 35 are bonded onto the diaphragm 34 so as to face respectively the pressure chamber 32. The diaphragm 34 is composed of a filmy diaphragm forming layer 34A coating one face 33A of the base stand 33, and a plurality of diaphragm forming layers 34B formed by being divided on the diaphragm forming layer 34A so as to face the pressure chamber 32. A length and a width of the diaphragm forming layer 34B are selected to be less than a length and a width of the pressure chamber 32, and the diaphragm forming layer 34A is made freely displaceable inside each pressure chamber 32.