公开(公告)号：JPH0336274A

公开(公告)日：1991-02-15

申请号：JP16881589

申请日：1989-06-30

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C23C14/34 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01L21/31

Abstract: PURPOSE:To shorten a time necessary for exhaust and to enhance productivity by providing a gate valve formed of a member excellent in airtightness to the position near to a sample base and reducing the volume to be vacuumized and exhausted in the case of moving and exchanging the sample. CONSTITUTION:A plasma device which generates plasma by utilizing electron cyclotron resonance is formed of both a plasma forming chamber 3 having a window 4 for pulling out a plasma flow 12 and a sample chamber 7 having a sample base 6 arranged oppositely to the window 4. The plasma forming chamber 3 is connected to the window 4 via a gate valve 13. Further, this gate valve is arranged to the position divided in the midway part of the window 4 and the sample base 6.

公开(公告)号：JPH0336272A

公开(公告)日：1991-02-15

申请号：JP16917289

申请日：1989-06-30

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C23C16/48 ,  H01L21/31

Abstract: PURPOSE:To prevent a film from being stuck on a susceptor and to prevent generation of dust and to enhance film quality by providing a means for irradiating the rear of a wafer with light to heat it and reducing heating of the whole susceptor holding the wafer. CONSTITUTION:A photo-CVD device is formed of a reaction chamber, a susceptor 10 which is provided therein and holds a wafer 5 and a means 13 for irradiating the rear of the susceptor 10 with light to heat it. Further, a means 12 for reflecting the light with which the rear of the susceptor 10 has been irradiated is provided. Furthermore, one part of the susceptor 10 is formed of material low in thermal conductivity.

公开(公告)号：JPH02294050A

公开(公告)日：1990-12-05

申请号：JP11527989

申请日：1989-05-09

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/76 ,  H01L21/3205

Abstract: PURPOSE:To form a trench having a good shape opening and prevent any horn or detect for being produced by forming a taper along the opening of the trench by an ECR plasma device to which a bias is applicable and burying an insulating film in the trench simultaneously with the tape formation. CONSTITUTION:Where a trench 2 positioned on a substrate 1 is buried, a taper 3 is formed along an opening 21 of the trench 2 using an ECR plasma device to which a bias is applicable. Then, an insulating film 5 is buried in the trench 2 simultaneously with the taper formation. Hereby, the taper 3 can satisfactorily be formed among the opening 21 of the trench 2, and such provision of the taper 3 prevents any horn or other disadvantageous defects from being produced.

公开(公告)号：JPH02251141A

公开(公告)日：1990-10-08

申请号：JP7327089

申请日：1989-03-24

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To suppress etching that goes in the direction of the film surface of a metal film by stopping etching at a place where the base substance of a film to be etched is exposed to the outside and then, making a protecting film deposit to the side face of an etched film that is still in existence, thereby performing an additional etching. CONSTITUTION:When an anisotropic etching to a film 2 to be etched is performed by the use of a resist mask 3, an etching system, so to speak, a just etching process is performed in such a manner that etching terminates at a place where the base substance 1 of the film 2 to be etched is exposed to the outside. Then a protecting film 4 is allowed to deposit to the side face 2a of an etched film that is still in existtence and after that, additional etching, that is, over etching, is performed. Occurrences of undercut in the case of over etching, that is, the hindrance of anisotropy, is effectively avoided.

公开(公告)号：JPH02250316A

公开(公告)日：1990-10-08

申请号：JP7276189

申请日：1989-03-23

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L23/522 ,  H01L21/28 ,  H01L21/768

Abstract: PURPOSE:To prevent a conductive material inside an opening part from being eroded by an etching operation used to pattern a wiring film by a method wherein the opening part which has been formed in an insulating film and which has been filled with the conductive material is formed in an upward constricted shape. CONSTITUTION:An opening part 6 which has been formed in an insulating film 3 and which has been filled with a conductive material 7 is formed in an upward constricted shape. When the opening part 6 is formed in the upward constricted shape, a diameter at the upper part as a part coming into contact with a wiring film 9 on the insulating film 3 at the opening part 6 can be made small so as to exceed a limit of a small diameter by lithography. Accordingly, even when a mask is displaced a little, or even when a line width of the wiring film 9 is narrow, it is possible to restrain the opening part 6 from protruding from the insulating film 9. Thereby, when the wiring film 9 is etched for patterning use, it is possible to prevent the conductive material 7 inside the opening part 6 from being eroded.

公开(公告)号：JPH02203527A

公开(公告)日：1990-08-13

申请号：JP2259689

申请日：1989-02-02

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To enable a rectangular etching process leaving no residue at all to be performed by a method wherein, when a high melting point metal film is formed by reactive ion etching process, a mixed gas of fluorine base, chlorine base and oxidizing gas is used. CONSTITUTION:A silicon oxide insulating film 3 is formed on a semiconductor substrate 4 and then a high melting point metallic film 1 comprising tungsten is formed on the film 3. Next, the whole surface is coated with a novolak base positive resist which is left conforming to a wiring pattern by lithographic process. Then, anisotropical dry etching process is performed by a reactive ion etching device. At this time, as for the applicable etching gas, a mixed gas of SF6, Cl2 and O2 is used. Through these procedures, the high melting point metal film 1 is left as a wiring pattern but leaving no undercut or normal taper cut at all thereby enabling acceptable etching process leaving no residue at all to be performed.

公开(公告)号：JPH02161721A

公开(公告)日：1990-06-21

申请号：JP31751388

申请日：1988-12-14

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/205 ,  H01L21/263 ,  H01L21/31

Abstract: PURPOSE:To uniformize the thickness and quality of a CVD film without making an apparatus large and complex by a method wherein, while light is projected nearly parallel with a substrate, CVD is progressed and the substrate surface is scanned with the light. CONSTITUTION:A mirror 6, optical system member, is arranged in a reaction chamber 1; a laser beam LB entering through a transparent window 3 on the upper surface 2 of the reaction chamber 1 is reflected by the mirror 6; thus the light parallel to the rear of a semiconductor wafer 7 is obtained. Thereby, the light from an external laser 4 can be projected parallel with the semiconductor wafer surface without increasing the height of the reaction chamber 1. Since the semiconductor wafer is moved by a retaining stand 5, it is not necessary to move the laser 4, so that complicated and large laser transferring mechanism to move the laser 4 is unnecessitated. Since the wafer is moved relatively to the optical system in the reaction chamber 1, the uniformity of film thickness and film quality are improved by scanning the substrate surface with light.

公开(公告)号：JPH02150026A

公开(公告)日：1990-06-08

申请号：JP30440688

申请日：1988-12-01

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/3213

Abstract: PURPOSE:To prevent the formation of an undercut in a high melting-point metallic silicide film by etching a high melting-point metallic film by a gas containing a fluorine group gas and a chlorine group gas and etching a high melting-point silicide film by the chlorine group gas. CONSTITUTION:A tungsten silicide film 4 is formed onto an SiO2 film 1 through a CVD method, and a tungsten film 2 is shaped onto the tungsten silicide film 4 through the CVD method. A specified resist 3 is patterned onto the tungsten film 2, and the tungsten silicide film 4 is etched until it is exposed by using SF6 gas and Cl2 gas through plane parallel plate type RIE. The tungsten silicide film 4 is etched through EIR by employing Cl2 gas. Accordingly, only a chlorine group gas is used as the etching gas of the tungsten silicide film 4 hence anisotropic working of the tungsten silicide film 4 without adding a depositing gas such as C2H4 can be performed.

公开(公告)号：JPH0245924A

公开(公告)日：1990-02-15

申请号：JP19746688

申请日：1988-08-08

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: H01L21/28

Abstract: PURPOSE:To enable a highly reliable electrode wiring with Cu being present on the surface to be formed highly accurately by forming an electrode wiring pattern for obtaining a metal layer 1 which is easily machined finally and forming a Cu layer ON the metal layer 1 by reducing Cu. CONSTITUTION:A ground metal layer 1 which can be easily machined is formed at a specified pattern, namely, the pattern corresponding to an electrode wiring pattern to be obtained finally. Cu salt steam is supplied to the metal layer 1, reduction reaction is performed under H2 to allow a Cu layer 2 to be formed selectively on the metal layer 1, and an electrode wiring 3 of a specified pattern whose surface is covered with the Cu layer 2 is formed. Then, the Cu layer 2 is formed selectively on the metal surface 1. It allows the highly reliable electrode wiring 3 where Cu exists on the surface to be formed accurately.

公开(公告)号：JPH0234920A

公开(公告)日：1990-02-05

申请号：JP18524488

申请日：1988-07-25

Applicant: SONY CORP

Inventor： SATO JUNICHI

IPC: C23F1/12 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

Abstract: PURPOSE:To enable etching to be performed at high speed while restraining undercut by making etching gas contain fluoro gas and chlorine gas, and etching high melting point metal using this etching gas. CONSTITUTION:W12 is accumulated by DC sputtering on a semiconductor substrate 1, and resist 13 is applied on W12, and after patterning the resist 13 by a stepper RIE is done. Etching gas contains fluoro gas SF6 and chlorine gas Cl2, and in case that this mixed gas is used as etching gas, the undercut of W12 is restrained. Hereby, etching can be done at high speed while restraining the undercut.