公开(公告)号：FR2833408B1

公开(公告)日：2004-03-12

申请号：FR0116047

申请日：2001-12-12

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H01L27/144

Abstract: The photodiode comprises an upper pn junction (D1) formed between an upper layer and an intermediate layer supported by one portion of a semiconductor substrate. A lower junction is formed between the intermediate layer and the substrate portion. The forward bias voltage of the upper junction (D1) is lower than the forward bias voltage of the lower junction (D2). The charges are permitted to be stored in the photodiode until the said upper junction is forward-biased so as to favor (A1) the recombination of the carriers coming from the intermediate layer with the carriers of the upper layer.

公开(公告)号：FR2820882B1

公开(公告)日：2003-06-13

申请号：FR0101880

申请日：2001-02-12

Applicant: ST MICROELECTRONICS SA

Inventor： ROY FRANCOIS

IPC: H01L27/144 ,  H01L27/146 ,  H01L31/0352