公开(公告)号：US20180212130A1

公开(公告)日：2018-07-26

申请号：US15933900

申请日：2018-03-23

Applicant: Research & Business Foundation SUNGKYUNKWAN UNIVERSITY ,  Samsung Electronics Co., Ltd.

Inventor： Seongjun PARK ,  Hyeonjin Shin ,  Sungwng Kim ,  Eunsung Kim ,  Jaeyeol Hwang Hwang

IPC: H01L35/16 ,  H01L35/18 ,  H01L21/02 ,  H01L35/34 ,  H01L35/10

CPC classification number: H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

公开(公告)号：US20180179397A1

公开(公告)日：2018-06-28

申请号：US15805848

申请日：2017-11-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Minsu Seol ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Jeong

IPC: C09D7/12 ,  C09D1/00 ,  C08K3/04 ,  C08K9/04 ,  H01L21/308 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: Provided are a hardmask composition and a method of forming a fine pattern using the hardmask composition, the hardmask composition including a solvent, a 2D carbon nanostructure (and/or a derivative thereof), and a 0D carbon nanostructure (and/or a derivative thereof).

公开(公告)号：US09989853B2

公开(公告)日：2018-06-05

申请号：US14791912

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: G03F7/11 ,  H01L21/47 ,  H01L21/4757 ,  C08K3/38 ,  C08K3/30 ,  G03F7/40 ,  C08G83/00 ,  G03F7/09

Abstract: A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

公开(公告)号：US20180148334A1

公开(公告)日：2018-05-31

申请号：US15805810

申请日：2017-11-07

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Hyeonjin Shin ,  Meeree Kim ,  Hyoyoung Lee ,  Yunhee Cho

IPC: C01B19/00 ,  C30B29/46 ,  C30B7/14 ,  H01L29/06

Abstract: Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

公开(公告)号：US09922825B2

公开(公告)日：2018-03-20

申请号：US14728583

申请日：2015-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Hyeonjin Shin ,  Jaeho Lee ,  Haeryong Kim

IPC: H01L29/06 ,  H01L21/02 ,  H01L29/78 ,  H01L29/786 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24 ,  H01L29/41 ,  H01L29/16

CPC classification number: H01L21/02568 ,  H01L21/0259 ,  H01L21/02628 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/413 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7839 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: An electronic device includes first and second electrodes that are spaced apart from each other and a 2D material layer. The 2D material layer connects the first and second electrodes. The 2D material layer includes a plurality of 2D nanomaterials. At least some of the 2D nanomaterials overlap one another.

公开(公告)号：US20170331397A1

公开(公告)日：2017-11-16

申请号：US15498897

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (Ulsan National Institute of Science and Technology)

Inventor： Jae-Young KIM ,  Kyungeun Byun ,  Minsu Seol ,  Hyeonjin Shin ,  Jeongmin Baik ,  Jinsung Chun ,  Byeonguk Ye

IPC: H02N2/18

CPC classification number: H02N2/18 ,  H02N1/04

Abstract: A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.

公开(公告)号：US09728661B2

公开(公告)日：2017-08-08

申请号：US14558384

申请日：2014-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwoo Kim ,  Kyungsik Shin ,  Hye-Jung Park ,  Eunbi Cho

IPC: H01L31/032 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/08

CPC classification number: H01L31/032 ,  H01L31/022408 ,  H01L31/0324 ,  H01L31/04 ,  H01L31/08 ,  Y02E10/50

Abstract: Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.

公开(公告)号：US20160314968A1

公开(公告)日：2016-10-27

申请号：US15134693

申请日：2016-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeryong KIM ,  Hyeonjin Shin ,  Seongjun Park

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  C23C16/56 ,  C09D1/00

CPC classification number: H01L21/02568 ,  C09D1/00 ,  C23C16/305 ,  C23C16/56 ,  H01L21/0262 ,  H01L21/02664 ,  H01L29/42356 ,  H01L29/78681

Abstract: Provided are a composition for forming a layered transition metal chalcogenide compound layer and a method of forming a layered transition metal chalcogenide compound layer by using the composition. The composition includes at least one of a transition metal precursor represented by Formula 1 and a chalcogenide precursor represented by Formula 2. Ma(R1)6-b-c(H)b(R2)c  [Formula 1] wherein, in Formula 1, M, R1, R2, a, b, and c are the same as defined in the detailed description, and M′kX2  [Formula 2] wherein, in Formula 2, M′ and X are the same as defined in the detailed description.

公开(公告)号：US12255244B2

公开(公告)日：2025-03-18

申请号：US18171502

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Minsu Seol ,  Ho Won Jang ,  Yeonchoo Cho ,  Hyeonjin Shin

IPC: H01L29/423 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66

Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.

公开(公告)号：US12199129B2

公开(公告)日：2025-01-14

申请号：US17313464

申请日：2021-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Minsu Seol ,  Hyeonjin Shin

IPC: H01L27/146 ,  H04N23/11

Abstract: An image sensor includes a visible light sensor portion and an infrared sensor portion arranged on the visible light sensor portion. The visible light sensor portion includes a first sensor layer and a first signal wiring layer, wherein a plurality of visible light sensing elements are arrayed in the first sensor layer and the first signal wiring layer is configured to process a signal output from the first sensor layer. The infrared sensor portion includes a second sensor layer in which a plurality of infrared sensing elements are arrayed, and a second signal wiring layer configured to process a signal output from the second sensor layer. The infrared sensor portion and the visible light sensor portion form a single monolithic structure which is effective in obtaining high resolution.