公开(公告)号：US20130069114A1

公开(公告)日：2013-03-21

申请号：US13622379

申请日：2012-09-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/4175 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787

Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

Abstract translation: 提供具有多个电压阈值的通道的装置。 通道可以包括位于与作为常开通道的源电极相邻的第一部分和位于第一部分和作为常开通道的漏电极之间的第二部分。 该装置可以包括连接到源电极的电荷控制电极，其从源电极延伸到通道的第二部分的至少一部分上。 在器件工作期间，充电控制电极和通道之间的电位差可以控制通道的常开部分的开/关状态。

公开(公告)号：US10586890B2

公开(公告)日：2020-03-10

申请号：US16143015

申请日：2018-09-26

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L29/06 ,  H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44

Abstract: An opto-electronic device with two-dimensional injection layers is described. The device can include a semiconductor structure with a semiconductor layer having one of an n-type semiconductor layer or a p-type semiconductor layer, and a light generating structure formed on the semiconductor layer. A set of tilted semiconductor heterostructures is formed over the semiconductor structure. Each tilted semiconductor heterostructure includes a core region, a set of shell regions adjoining a sidewall of the core region, and a pair of two-dimensional carrier accumulation (2DCA) layers. Each 2DCA layer is formed at a heterointerface between one of the sidewalls of the core region and one of the shell regions. The sidewalls of the core region, the shell regions, and the 2DCA layers each having a sloping surface, wherein each 2DCA layer forms an angle with a surface of the semiconductor structure.

公开(公告)号：US10276749B2

公开(公告)日：2019-04-30

申请号：US15706990

申请日：2017-09-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Remigijus Gaska ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Michael Shur ,  Grigory Simin

IPC: H01L33/22 ,  H01L23/00 ,  H01L29/15 ,  H01L33/38 ,  H01L21/02 ,  H01L33/30 ,  H01L33/32

Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.

公开(公告)号：US10256334B2

公开(公告)日：2019-04-09

申请号：US15137772

申请日：2016-04-25

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/778 ,  H01L29/06 ,  H01L23/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/772 ,  H01L27/06 ,  H01L29/8605 ,  H01P1/15 ,  H01H59/00 ,  H01H1/00

Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.

公开(公告)号：US10190973B2

公开(公告)日：2019-01-29

申请号：US15472198

申请日：2017-03-28

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: G01N21/33 ,  H01L31/00

Abstract: An integrated ultraviolet analyzer is described. The integrated ultraviolet analyzer can include one or more ultraviolet analyzer cells, each of which includes one or more ultraviolet photodetectors and one or more solid state light sources, which are monolithically integrated. The solid state light source can be operated to emit ultraviolet light, at least some of which passes through an analyzer active gap and irradiates a light sensing surface of the ultraviolet photodetector. A medium to be evaluated can be present in the analyzer active gap and affect the ultraviolet light as it passes there through, thereby altering an effect of the ultraviolet light on a ultraviolet photodetector.

公开(公告)号：US20190027651A1

公开(公告)日：2019-01-24

申请号：US15798875

申请日：2017-10-31

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/32 ,  H01L33/30 ,  H01L33/40

CPC classification number: H01L33/382 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46

Abstract: A contact for solid state light sources is described. The solid state light source can include an active region, such as a light emitting multiple quantum well, and a semiconductor layer, such as a p-type layer, from which carriers (e.g., holes) enter the active region. A contact can be located adjacent to the semiconductor layer and include a plurality of small area contacts extending only partially through the semiconductor layer. The plurality of small area contacts can have a characteristic lateral size at an interface between the small area contact and the semiconductor layer equal to or smaller than a characteristic depletion region width for the plurality of small area contacts.

公开(公告)号：US10002862B2

公开(公告)日：2018-06-19

申请号：US15263716

申请日：2016-09-13

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur

IPC: H01L23/00 ,  H01L27/02 ,  H01L25/16 ,  H01L23/62

CPC classification number: H01L27/0266 ,  H01L23/62 ,  H01L25/167 ,  H01L27/0248

Abstract: A solid-state light source (SSLS) with an integrated short-circuit protection approach is described. A device can include a SSLS having an n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A field-effect transistor (FET) can be monolithically connected in series with the SSLS. The FET can have a saturation current that is greater than the normal operating current of the SSLS and less than a predetermined protection current threshold specified to protect the SSLS and the FET.

公开(公告)号：US09991372B2

公开(公告)日：2018-06-05

申请号：US15263701

申请日：2016-09-13

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L29/00 ,  H01L29/778 ,  H01L29/06 ,  H01L29/10 ,  H01L29/201 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7786 ,  H01L29/0657 ,  H01L29/1037 ,  H01L29/1045 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/41758 ,  H01L29/42316

Abstract: A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.

公开(公告)号：US20180097157A1

公开(公告)日：2018-04-05

申请号：US15720352

申请日：2017-09-29

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L33/58 ,  H01L33/08 ,  H01L31/0236 ,  H01L31/0232

CPC classification number: H01L33/58 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/0236 ,  H01L31/035236 ,  H01L31/1013 ,  H01L31/12 ,  H01L33/08 ,  H01L33/32

Abstract: A semiconductor heterostructure for an optoelectronic device includes a base semiconductor layer having one or more semiconductor heterostructure mesas located thereon. One or more of the mesas can include a set of active regions having multiple main peaks of radiative recombination at differing wavelengths. For example, a mesa can include two or more active regions, each of which has a different wavelength for the corresponding main peak of radiative recombination. The active regions can be configured to be operated simultaneously or can be capable of independent operation. A system can include one or more optoelectronic devices, each of which can be operated as an emitter or a detector.

公开(公告)号：US09887267B2

公开(公告)日：2018-02-06

申请号：US15234350

申请日：2016-08-11

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur

IPC: H01L29/00 ,  H01L29/40 ,  H01L29/423 ,  H01L29/778 ,  H01L29/78 ,  H01L29/15 ,  H01L29/417 ,  H01L29/20

CPC classification number: H01L29/402 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/423 ,  H01L29/42316 ,  H01L29/7783 ,  H01L29/7832

Abstract: A normally-off transistor with a high operating voltage is provided. The transistor can include a barrier above the channel and an additional barrier layer located below the channel. A source electrode and a drain electrode are connected to the channel and a gate electrode is connected to the additional barrier layer located below the channel. The bandgap for each of the barrier layers can be larger than the bandgap for the channel. A polarization charge induced at the interface between the additional barrier layer below the channel and the channel depletes the channel. A voltage can be applied to the bottom barrier to induce free carriers into the channel and turn the channel on.