公开(公告)号：US20240297020A1

公开(公告)日：2024-09-05

申请号：US18583943

申请日：2024-02-22

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Yuki OSADA ,  Hiroyuki MIYASHITA

IPC: H01J37/32

CPC classification number: H01J37/32256 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32293

Abstract: A plasma processing apparatus includes: a processing container; a resonator configured to resonate electromagnetic waves to be supplied; a slot antenna connected to the resonator; and a transmission window configured to transmit the electromagnetic waves radiated from the slot antenna and supply the electromagnetic waves into the processing container, wherein the resonator includes: an input port including an inner shaft and an outer cylinder; an output port including an inner shaft and an outer cylinder; a power supply fin connecting the inner shaft of the input port and the inner shaft of the output port and provided in the resonator; and a ground fin connected to the outer cylinder of the input port and the outer cylinder of the output port at a same potential and provided to protrude within the resonator so as to be inserted between fins of the power supply fin.

公开(公告)号：US20240297018A1

公开(公告)日：2024-09-05

申请号：US18589744

申请日：2024-02-28

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Yuki OSADA ,  Hiroyuki MIYASHITA

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3211 ,  H01J2237/327

Abstract: A distributor for distributing electromagnetic waves to a plurality of output terminals, the distributor includes: a power supply terminal configured to be electrically connected to a radio-frequency power source configured to be capable of varying frequency; and a plurality of filters provided respectively at the plurality of output terminals to which the electromagnetic waves input to the power supply terminal are distributed. The plurality of filters is configured to have different frequency characteristics.

公开(公告)号：US20240038500A1

公开(公告)日：2024-02-01

申请号：US18256683

申请日：2021-12-07

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32174 ,  H01J37/32715 ,  H01L21/02274 ,  H01J2237/334

Abstract: A plasma processing apparatus includes: a shower head provided above a substrate supporter; a gas supply pipe extending vertically above a chamber to be connected to an upper center of the shower head; an introducer through which the gas supply pipe passes and into which an electromagnetic wave of a VHF or higher is introduced to activate a gas; and an electromagnetic-wave supply path connected to the gas supply pipe. The introducer has a first dissociation space arranged upstream of the shower head and to which a first gas is supplied. The chamber has a second dissociation space between the substrate supporter and the shower head. The first gas dissociated in the first dissociation space and a second gas from the gas supply pipe are joined in the second dissociation space where they are dissociated by a radio-frequency wave having a frequency lower than that of the electromagnetic wave.

公开(公告)号：US20240014013A1

公开(公告)日：2024-01-11

申请号：US18217885

申请日：2023-07-03

Applicant: Tokyo Electron Limited

Inventor： Nobuo MATSUKI ,  Hiroyuki MATSUURA ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/201 ,  H01J2237/332 ,  H01L21/32051

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

公开(公告)号：US20230178339A1

公开(公告)日：2023-06-08

申请号：US17994711

申请日：2022-11-28

Applicant: Tokyo Electron Limited

Inventor： Kenta KATO ,  Taro IKEDA ,  Isao GUNJI

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32238 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a processing container including an opening provided in a ceiling wall of the processing container, and a microwave radiation source. The microwave radiation source includes a slot antenna including a slot and configured to radiate microwaves from the slot, and a transmission window configured to close the opening and to radiate the microwaves from the slot into the processing container. The transmission window includes a first surface including a skirt which suspends to cover a side wall of the opening, and a second surface which is an opposite surface to the first surface and faces the slot antenna with a gap between the slot antenna and the second surface.

公开(公告)号：US20230033323A1

公开(公告)日：2023-02-02

申请号：US17869362

申请日：2022-07-20

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Yuki OSADA ,  Hiroyuki MIYASHITA ,  Hiroyuki ONODA ,  Satoru KAWAKAMI

IPC: H01J37/32

Abstract: There is provided a plasma source comprising a first chamber configured to form a flat first plasma generation space, and having a first wall and a second wall, a gas supply configured to supply gas into the first chamber, an electromagnetic wave supply having a dielectric window that is provided in an opening provided in the first wall to face the first plasma generation space, and configured to supply an electromagnetic wave through the dielectric window into the first chamber. The plasma source comprises a plasma supply configured to supply radicals contained in plasma that is generated from the gas supplied into the first chamber by the electromagnetic wave to an outside of the first chamber, and a plasma ignition source provided in the first chamber to protrude from an inner wall of the second wall facing the dielectric window and to be separated from the dielectric window.

公开(公告)号：US20230005720A1

公开(公告)日：2023-01-05

申请号：US17756681

申请日：2020-11-24

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA ,  Satoru KAWAKAMI

IPC: H01J37/32 ,  C23C16/509

Abstract: A plasma processing apparatus includes a stage provided in a processing container, and an upper electrode. The upper electrode includes a dielectric plate facing the stage, and a conductor formed on a surface of the dielectric plate opposite to a surface of the dielectric plate facing the stage. The dielectric plate includes a central portion, an outer peripheral portion, and an intermediate portion between the central portion and the outer peripheral portion. The intermediate portion has a thickness larger than the thicknesses of the central portion and the outer peripheral portion.

公开(公告)号：US20220277935A1

公开(公告)日：2022-09-01

申请号：US17663907

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Eiki KAMATA ,  Mikio SATO

IPC: H01J37/32 ,  B01J19/08 ,  H05H1/46 ,  C23C16/511

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.

公开(公告)号：US20220246399A1

公开(公告)日：2022-08-04

申请号：US17584781

申请日：2022-01-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a coaxial tube that extends in a vertical direction and forms a portion of a radio frequency waveguide; a substrate support configured to support a substrate; an electrode including a gas flow path connected to a gas ejection port opened toward a space above the substrate support, wherein the electrode is provided above the substrate support and an inner conductor of the coaxial tube is connected to a center of the electrode; an enlarged diameter portion forming a part of the radio frequency waveguide together with the electrode and connected to an outer conductor of the coaxial tube; and dielectric tubes formed of a dielectric material, wherein each of the dielectric tubes is connected to the electrode and penetrates a space between the electrode and the enlarged diameter portion to supply a gas to the electrode, wherein the dielectric tubes is scatteredly provided.

公开(公告)号：US20220084797A1

公开(公告)日：2022-03-17

申请号：US17299430

申请日：2019-11-26

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Toshifumi KITAHARA

IPC: H01J37/32

Abstract: Provided is a plasma processing apparatus capable of suppressing abnormal discharge. The plasma processing apparatus includes: an upper electrode and a lower electrode which are disposed inside a processing container so as to face each other inside the processing container; and a dielectric shower for gas introduction disposed below the upper electrode, wherein the plasma processing apparatus generates plasma in a space between the upper electrode and the lower electrode. The upper electrode includes: at least one slot configured to introduce VHF waves into the processing container; and a gas flow path provided independently of the at least one slot and in communication with the dielectric shower.