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    PRODUCTION OF DIARYL CARBONATE
    61.
    发明专利
    PRODUCTION OF DIARYL CARBONATE 失效

    公开(公告)号：JPH08325206A

    公开(公告)日：1996-12-10

    申请号：JP7025396

    申请日：1996-03-26

    Applicant: UBE INDUSTRIES

    Inventor： HARADA KATSUMASA ,  SUGISE RIYOUJI ,  INBE YOUICHI ,  SUMITA TOSHIHIKO ,  YAMAMOTO YOSHIFUMI ,  SUGIMOTO TSUNEMI ,  KURATO TOSHIO

    IPC: C07C68/00 ,  C07C69/96

    Abstract: PURPOSE: To readily obtain a diaryl carbonate in good yield without using phosgene which is a compound having strong toxicity by carrying out a decarbonylation reaction of a diaryl oxalate at a specific temperature. CONSTITUTION: A diaryl oxalate is subjected to a decarbonylation reaction at 330-800 deg.C, especially 450-650 deg.C in a vapor phase. Furthermore, specifically, e.g. (A) the diaryl oxalate dissolved in a solid, a melted liquid or a solvent is previously vaporized and fed to a reactor together with (B) an inert gas such as nitrogen gas and (C) an inert filler such as quartz having no acid point, hydroxyl group, etc., in a feed amount of 10-1000g/L.hr (L is a unit volume; hr is a unit time) and a space velocity of 100-6000hr and then, the reaction of the diaryl oxalate is carried out under ordinary or reduced pressure.

    62.
    发明专利
    失效

    公开(公告)号：JPH05294798A

    公开(公告)日：1993-11-09

    申请号：JP17055692

    申请日：1992-06-29

    Applicant: KOKUSAI CHODENDO SANGYO GIJUTS ,  ISHIKAWAJIMA HARIMA HEAVY IND ,  UBE INDUSTRIES

    Inventor： KUBOTA NOBUHIKO ,  SUGIMOTO TSUNEMI ,  SHIOBARA TORU

    IPC: C01G1/00 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

    Abstract: PURPOSE:To produce a Bi-Sr-Ca-Cu-O superconducting thin film with the (110) face selectively grown and oriented with respect to the substrate surface and appropriate to prepare the Josephson junction device, three-terminal device, etc. CONSTITUTION:A Bi-Sr-Ca-Cu-O superconducting thin film is formed on a substrate consisting of an MgO [110] single crystal by chemical vapor deposition, and the (110) face is selectively grown with respect to the substrate surface. Consequently, Bi-Sr-Ca-Cu-O superconducting thin film extremely effective for the Josephson junction device, three-terminal device, etc., is obtained by chemical vapor deposition.

    OXIDE SUPERCONDUCTOR AND ITS PRODUCTION
    64.
    发明专利
    OXIDE SUPERCONDUCTOR AND ITS PRODUCTION 失效

    公开(公告)号：JPH04154618A

    公开(公告)日：1992-05-27

    申请号：JP25228790

    申请日：1990-09-21

    Applicant: KOKUSAI CHODENDO SANGYO GIJUTS ,  KYOCERA CORP ,  SHARP KK ,  UBE INDUSTRIES ,  ASAHI GLASS CO LTD

    Inventor： HAYASHI HARUMI ,  YAMADA YOUJI ,  SUGAWARA KAZUSHI ,  SUGIMOTO TSUNEMI ,  SHIOBARA TORU ,  TANAKA SHOJI

    IPC: C01G3/00 ,  C01G1/00 ,  H01B12/00 ,  H01B13/00 ,  H01L39/24

    Abstract: PURPOSE:To obtain an oxide superconductor having improved high-temperature stability by depositing an oxide superconductor composed of a rare-earth element, Ba, Cu and O at specific compositional ratios on a substrate by a vapor- phase growth process using O2 gas and an organic metal gas containing rare- earth element, Ba and Cu. CONSTITUTION:Organic metal raw materials containing a rare-earth element (e.g. Y and La), Ba and Cu respectively are prepared in such a manner as to give a vapor mixture of the above components having ratios of the objective superconductor (i.e., 1:2:4) and the vapor is added with O2 to obtain a mixed gas. The mixed gas is introduced into a quartz-made reactor 1 under an O2 partial pressure of 7.5-34 Torr through a mixed gas inlet port 2. A substrate 5 made of MgO or SrTiO3 and attached to a susceptor 4 placed in the middle of the reactor 1 is heated with a high-frequency coil 6 and, at the same time, the mixed gas is heated at 700-840 deg.C to deposit an oxide film containing an oxide superconductor on the surface of the substrate 5. The oxide is etched by dry-etching to obtain an oxide superconductor (e.g. YBa2Cu4O8) stable at high temperature.

    Method for producing amide compound
    65.
    发明专利
    Method for producing amide compound 有权
    生产酰胺化合物的方法

    公开(公告)号：JP2011190207A

    公开(公告)日：2011-09-29

    申请号：JP2010056932

    申请日：2010-03-15

    Applicant: Ube Industries Ltd ,  Yamaguchi Univ ,  国立大学法人山口大学 ,  宇部興産株式会社

    Inventor： YAMAMOTO TOSHIKI ,  SUGIMOTO TSUNEMI

    IPC: C07D201/04 ,  C07B61/00 ,  C07D225/02

    Abstract: PROBLEM TO BE SOLVED: To provide a method for producing an amide compound which can produce the amide compound in a high yield by inhibiting the formation of by-products in the method for producing the amide compound by subjecting an oxime compound to the Beckmann rearrangement reaction. SOLUTION: The method for producing an amide compound by subjecting an oxime compound to the Beckmann rearrangement reaction comprises conducting the Beckmann rearrangement reaction in the presence of a triflate compound and trifluoromethanesulfonimide or cobalt borofluoride hexahydrate. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 待解决的问题：提供一种制备酰胺化合物的方法，该酰胺化合物可以通过抑制酰胺化合物的制备方法中的副产物形成而以高产率生产酰胺化合物，方法是使肟化合物 贝克曼重排反应。 解决方案：通过使肟化合物进行贝克曼重排反应来制备酰胺化合物的方法包括在三氟甲磺酸酯化合物和三氟甲磺酰亚胺或六氟化硼钴的存在下进行贝克曼重排反应。 版权所有（C）2011，JPO＆INPIT

    Method for producing amide compound
    66.
    发明专利
    Method for producing amide compound 有权
    生产酰胺化合物的方法

    公开(公告)号：JP2011184332A

    公开(公告)日：2011-09-22

    申请号：JP2010049548

    申请日：2010-03-05

    Applicant: Ube Industries Ltd ,  Yamaguchi Univ ,  国立大学法人山口大学 ,  宇部興産株式会社

    Inventor： YAMAMOTO TOSHIKI ,  SUGIMOTO TSUNEMI

    IPC: C07D201/04 ,  C07B61/00 ,  C07D223/10

    Abstract: PROBLEM TO BE SOLVED: To provide a method for producing an amide compound that permits the production of an amide compound simply in a high yield while suppressing formation of by-products. SOLUTION: The method for producing an amide compound comprises subjecting an oxime compound to a Beckmann rearrangement reaction, where a reaction product, obtained by a Beckmann rearrangement reaction in the presence of cyanuric chloride, and silica gel are mixed and agitated to be brought into contact with each other. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 待解决的问题：提供一种制备酰胺化合物的方法，其允许简单地以高产率生产酰胺化合物，同时抑制副产物的形成。 解决方案：酰胺化合物的制备方法包括使肟化合物进行贝克曼重排反应，其中将通过贝克曼重排反应在氰尿酰氯和硅胶存在下得到的反应产物混合并搅拌成 互相接触。 版权所有（C）2011，JPO＆INPIT

    Method of producing amide compound
    67.
    发明专利
    Method of producing amide compound 有权
    生产酰胺化合物的方法

    公开(公告)号：JP2011178672A

    公开(公告)日：2011-09-15

    申请号：JP2010041788

    申请日：2010-02-26

    Applicant: Ube Industries Ltd ,  Yamaguchi Univ ,  国立大学法人山口大学 ,  宇部興産株式会社

    Inventor： YAMAMOTO TOSHIKI ,  SUGIMOTO TSUNEMI

    IPC: C07D233/10 ,  B01J31/26 ,  C07B61/00

    CPC classification number: Y02P20/52

    Abstract: PROBLEM TO BE SOLVED: To provide a method of producing an amide compound capable of producing the same at a high yield by preventing the production of byproducts. SOLUTION: The method of producing an amide compound by subjecting an oxime compound to a Beckmann rearrangement reaction, is characterized by carrying out the Beckmann rearrangement reaction in the presence of one or more of a first catalyst selected from acid chlorides and Lewis acids, and one or more of a second catalyst selected from trifluoroalkylsulfonic acid anhydrides and zinc oxide. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 待解决的问题：提供一种制备能够通过防止副产物生产而以高产率生产该酰胺化合物的方法。 解决方案：通过使肟化合物进行贝克曼重排反应制备酰胺化合物的方法的特征在于在一种或多种选自酰氯和路易斯酸的第一催化剂存在下进行贝克曼重排反应 以及一种或多种选自三氟烷基磺酸酐和氧化锌的第二种催化剂。 版权所有（C）2011，JPO＆INPIT

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