公开(公告)号：US09929134B2

公开(公告)日：2018-03-27

申请号：US14817186

申请日：2015-08-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L27/02 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L27/0207 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/0924

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate having a cell region defined thereon, in which the cell region includes a first edge and a second edge extending along a first direction; and a plurality of patterns on the substrate extending along the first direction, in which the patterns includes a plurality of first patterns and a plurality of second patterns, and one of the first patterns closest to the first edge and one of the second patterns closest to the second edge are different.

公开(公告)号：US09859170B2

公开(公告)日：2018-01-02

申请号：US15434067

申请日：2017-02-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Wei-Cyuan Lo ,  Ming-Jui Chen ,  Chia-Lin Lu ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yi-Kuan Wu ,  Chih-Sen Huang ,  Yi-Wei Chen ,  Tan-Ya Yin ,  Chia-Wei Huang ,  Shu-Ru Wang ,  Yung-Feng Cheng

IPC: H01L21/8238 ,  H01L21/768 ,  H01L27/11 ,  H01L23/535 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L21/823871 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823821 ,  H01L23/485 ,  H01L23/535 ,  H01L27/0922 ,  H01L27/1104 ,  H01L27/1108 ,  H01L29/7851 ,  H01L29/7853

Abstract: A method of forming a semiconductor structure is provided. A substrate having a memory region is provided. A plurality of fin structures are provided and each fin structure stretching along a first direction. A plurality of gate structures are formed, and each gate structure stretches along a second direction. Next, a dielectric layer is formed on the gate structures. A first patterned mask layer is formed, wherein the first patterned mask layer has a plurality of first trenches stretching along the second direction. A second patterned mask layer on the first patterned mask layer, wherein the second patterned mask layer comprises a plurality of first patterns stretching along the first direction. Subsequently, the dielectric layer is patterned by using the first patterned mask layer and the second patterned mask layer as a mask to form a plurality of contact vias. The contact holes are filled with a conductive layer.

公开(公告)号：US20170263744A1

公开(公告)日：2017-09-14

申请号：US15602087

申请日：2017-05-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang ,  Chih-Sen Huang ,  Ching-Wen Hung ,  Wei-Hao Huang

IPC: H01L29/78 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3115 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/76825 ,  H01L21/76897 ,  H01L29/66545

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.

公开(公告)号：US20170194212A1

公开(公告)日：2017-07-06

申请号：US15008462

申请日：2016-01-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Ying-Cheng Liu ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Chih-Sen Huang

IPC: H01L21/8238 ,  H01L29/161 ,  H01L27/092 ,  H01L29/24 ,  H01L29/165 ,  H01L29/78 ,  H01L29/08 ,  H01L29/16

CPC classification number: H01L21/823814 ,  H01L21/823425 ,  H01L21/823821 ,  H01L21/823871 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/24 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/785

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first fin-shaped structure and a second fin-shaped structure on the substrate; forming a first epitaxial layer on the first fin-shaped structure and a second epitaxial layer on the second fin-shaped structure; and forming a cap layer on the first epitaxial layer and the second epitaxial layer. Preferably, a distance between the first epitaxial layer and the second epitaxial layer is between twice the thickness of the cap layer and four times the thickness of the cap layer.

公开(公告)号：US09698255B2

公开(公告)日：2017-07-04

申请号：US14681119

申请日：2015-04-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang ,  Chih-Sen Huang ,  Ching-Wen Hung ,  Wei-Hao Huang

IPC: H01L29/78 ,  H01L21/311 ,  H01L21/768 ,  H01L21/3115 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L21/31144 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/76825 ,  H01L21/76897 ,  H01L29/66545

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.

公开(公告)号：US20170098707A1

公开(公告)日：2017-04-06

申请号：US14932993

申请日：2015-11-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Yi-Kuan Wu ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/31 ,  H01L27/088 ,  H01L21/285 ,  H01L29/26 ,  H01L29/417 ,  H01L29/45 ,  H01L29/66 ,  H01L21/311

CPC classification number: H01L27/088 ,  H01L21/02521 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/31 ,  H01L21/31116 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/66969

Abstract: A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric layer is formed on the epitaxial region, and a contact hole is formed in the dielectric layer. The contact hole exposes a part of the epitaxial region, and an oxide-containing layer is formed on the epitaxial region exposed by the contact hole. A contact structure is formed in the contact hole and on the oxide-containing layer. The oxide-containing layer is located between the contact structure and the epitaxial region. A semiconductor structure includes the semiconductor substrate, at least one epitaxial region, the contact structure, the oxide-containing layer, and a silicide layer. The contact structure is disposed on the epitaxial region. The oxide-containing layer is disposed between the epitaxial region and the contact structure. The silicide layer is disposed between the oxide-containing layer and the contact structure.

公开(公告)号：US09548239B2

公开(公告)日：2017-01-17

申请号：US14612235

申请日：2015-02-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Feng-Yi Chang ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Yi-Kuan Wu ,  Ying-Cheng Liu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L21/76 ,  H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/76816 ,  H01L21/76879

Abstract: A gate structure is first formed on a substrate and an interlayer dielectric (ILD) layer is formed around the gate structure, a dielectric layer is formed on the ILD layer and the gate structure, an opening is formed in the dielectric layer and the ILD layer, and an organic dielectric layer (ODL) is formed on the dielectric layer and in the opening. After removing part of the ODL, part of the dielectric layer to extend the opening, and then the remaining ODL, a contact plug is formed in the opening.

Abstract translation: 首先在衬底上形成栅极结构，并且在栅极结构周围形成层间电介质（ILD）层，在ILD层和栅极结构上形成介电层，在介电层和ILD层中形成开口 并且在介质层和开口中形成有机电介质层（ODL）。 在去除部分ODL后，部分电介质层延伸开口，然后剩余的ODL，在开口处形成接触塞。

公开(公告)号：US20170012033A1

公开(公告)日：2017-01-12

申请号：US14817186

申请日：2015-08-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L27/02 ,  H01L23/535 ,  H01L21/8234 ,  H01L27/088

CPC classification number: H01L27/0207 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823475 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/0924

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate having a cell region defined thereon, in which the cell region includes a first edge and a second edge extending along a first direction; and a plurality of patterns on the substrate extending along the first direction, in which the patterns includes a plurality of first patterns and a plurality of second patterns, and one of the first patterns closest to the first edge and one of the second patterns closest to the second edge are different.

Abstract translation: 公开了一种半导体器件。 半导体器件包括：具有限定在其上的单元区域的衬底，其中单元区域包括沿着第一方向延伸的第一边缘和第二边缘; 以及沿着所述第一方向延伸的所述基板上的多个图案，其中所述图案包括多个第一图案和多个第二图案，以及最靠近所述第一边缘的所述第一图案中的一个以及最接近 第二个边缘是不同的。

公开(公告)号：US20160284641A1

公开(公告)日：2016-09-29

申请号：US14692762

申请日：2015-04-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chih-Wei Yang ,  Chih-Sen Huang ,  Yu-Cheng Tung

IPC: H01L23/522 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/76895 ,  H01L21/28008 ,  H01L21/28088 ,  H01L21/3085 ,  H01L21/76834 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L29/00 ,  H01L29/66545 ,  H01L29/66553

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate having a gate structure thereon and a first interlayer dielectric (ILD) layer surrounding the gate structure; a first hard mask on the gate structure; and a second hard mask on the gate structure, wherein the first hard mask is adjacent to two sides of the second hard mask and the first hard mask and the first hard mask comprises silicon nitride.

Abstract translation: 公开了一种半导体器件。 半导体器件包括：其上具有栅极结构的衬底和围绕栅极结构的第一层间电介质（ILD）层; 栅极结构上的第一个硬掩模; 以及栅极结构上的第二硬掩模，其中所述第一硬掩模与所述第二硬掩模的两侧相邻，并且所述第一硬掩模和所述第一硬掩模包括氮化硅。

公开(公告)号：US09449964B2

公开(公告)日：2016-09-20

申请号：US14730230

申请日：2015-06-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Chih-Sen Huang ,  Po-Chao Tsao

IPC: H01L21/768 ,  H01L27/06 ,  H01L21/28 ,  H01L27/108 ,  H01L49/02 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L27/0629 ,  H01L21/28 ,  H01L21/76802 ,  H01L21/76877 ,  H01L27/1085 ,  H01L28/60 ,  H01L28/75 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66477 ,  H01L29/66545

Abstract: A semiconductor structure includes a metal gate, a second dielectric layer and a contact plug. The metal gate is located on a substrate and in a first dielectric layer, wherein the metal gate includes a work function metal layer having a U-shaped cross-sectional profile and a low resistivity material located on the work function metal layer. The second dielectric layer is located on the metal gate and the first dielectric layer. The contact plug is located on the second dielectric layer and in a third dielectric layer, thereby a capacitor is formed. Moreover, the present invention also provides a semiconductor process forming said semiconductor structure.

Abstract translation: 半导体结构包括金属栅极，第二电介质层和接触插塞。 金属栅极位于基板和第一电介质层中，其中金属栅极包括具有U形横截面轮廓的功函数金属层和位于功函数金属层上的低电阻率材料。 第二电介质层位于金属栅极和第一电介质层上。 接触塞位于第二电介质层上，在第三电介质层中形成电容器。 此外，本发明还提供了形成所述半导体结构的半导体工艺。