62.
    发明专利
    未知

    公开(公告)号:DE2543471A1

    公开(公告)日:1976-05-06

    申请号:DE2543471

    申请日:1975-09-29

    Applicant: XEROX CORP

    Abstract: A structure for providing arrays or individual hemispherical diodes and methods of producing the diodes. When the diode array is to be part of a configuration utilizing a substrate, the substrate is selected to have radiation transparency, a lower refractive index, and lattice constant and lattice structure similar to that of a crystal layer grown in hemispheres formed in the substrate. When the diode array is to be removed from the substrate, a material that can be preferentially etched is grown between the hemispheres formed in the substrate and the grown crystal layer that is to have light emitting areas.

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