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    Phased array semiconductor laser.
    1.
    发明公开
    Phased array semiconductor laser. 失效
    相位切换半导体激光器。

    公开(公告)号：EP0206496A2

    公开(公告)日：1986-12-30

    申请号：EP86303650

    申请日：1986-05-14

    Applicant: XEROX CORP

    Inventor： THORNTON ROBERT L ,  BURNHAM ROBERT D

    IPC: H01S5/00 ,  H01S5/20 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19 ,  H01L33/00

    CPC classification number: B82Y20/00 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/2059 ,  H01S5/3432 ,  H01S5/4031

    Abstract: @ A phased array semiconductor laser provides fundamental or preferred first supermode operation wherein laser fabrication is carried out via a single, continuous fabricating process followed by impurity-induced disordering (IID). Fundamental supermode selection is accomplished by providing a multiquantum well superlattice as a cladding layer in the phased array laser structure in combination with the conventional single semiconductor cladding- layer, which is followed by spatially-disposed impurity-induced disordering regions extending through the superlattice to form spatial regions capable of providing higher gain compared with adjacent regions without inpurity induced disordering contain unspoiled superiattice regions that provide higher real index waveguiding compared with the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared with the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred first supermode operation.

    3.
    发明专利
    未知

    公开(公告)号：DE3689180T2

    公开(公告)日：1994-05-11

    申请号：DE3689180

    申请日：1986-05-14

    Applicant: XEROX CORP

    Inventor： THORNTON ROBERT L ,  BURNHAM ROBERT D

    IPC: H01S5/00 ,  H01S5/20 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19 ,  H01S3/25 ,  H01S3/23 ,  H01L33/00

    Abstract: @ A phased array semiconductor laser provides fundamental or preferred first supermode operation wherein laser fabrication is carried out via a single, continuous fabricating process followed by impurity-induced disordering (IID). Fundamental supermode selection is accomplished by providing a multiquantum well superlattice as a cladding layer in the phased array laser structure in combination with the conventional single semiconductor cladding- layer, which is followed by spatially-disposed impurity-induced disordering regions extending through the superlattice to form spatial regions capable of providing higher gain compared with adjacent regions without inpurity induced disordering contain unspoiled superiattice regions that provide higher real index waveguiding compared with the adjacent disordered regions with the diffusions in the disordered regions have higher conductivity properties compared with the remaining ordered regions and are, therefore, more efficiently pumped electrically. As a result, disordered regions form alternating higher gain regions offset between regions of nondisordered waveguide regions having higher real index waveguiding properties but lower gain properties, thereby fulfilling the conditions necessary to provide fundamental or preferred first supermode operation.

    4.
    发明专利
    未知

    公开(公告)号：DE3785859D1

    公开(公告)日：1993-06-24

    申请号：DE3785859

    申请日：1987-01-14

    Applicant: XEROX CORP

    Inventor： HOLONYAK NICK ,  BURNHAM ROBERT D

    IPC: H01L21/18 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L33/06 ,  H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00 ,  H01L21/322 ,  H01S3/19

    Abstract: The semiconductor structure comprises a single crystal support (12) of low defect density, with selected areas of the crystal having dislocation defects in it. At least one semiconductor layer includes at least one active well and one barrier, epitaxially deposited on the support. The dislocation defects in the support has propagated into contiguous areas of the layer during the epitaxial deposition, where the contiguous areas have a higher dislocation density compared with remaining regions of layer. A disordered alloy is produced in the contiguous areas upon annealing of the structure, the effective rate of disordered conversion in the contiguous areas having been greater than that of the remaining areas because of the dislocation of defects. The disordered alloy regions exhibits higher band gap and higher refracture index properties compared with the remaining areas.

    MONOLITHIC MULTI-EMITTER LASER DEVICE
    5.
    发明专利
    MONOLITHIC MULTI-EMITTER LASER DEVICE 未知

    公开(公告)号：CA1138968A

    公开(公告)日：1983-01-04

    申请号：CA335310

    申请日：1979-09-06

    Applicant: XEROX CORP

    Inventor： SCIFRES DONALD R ,  STREIFER WILLIAM ,  BURNHAM ROBERT D

    IPC: H01S5/00 ,  H01S5/40 ,  H01S3/18

    Abstract: MONOLITHIC MULTI-EMITTING LASER DEVICE A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.

    OPTICAL BEAM SCANNING BY PHASE DELAYS
    6.
    发明专利
    OPTICAL BEAM SCANNING BY PHASE DELAYS 未知

    公开(公告)号：CA1138560A

    公开(公告)日：1982-12-28

    申请号：CA325259

    申请日：1979-04-10

    Applicant: XEROX CORP

    Inventor： SCIFRES DONALD R ,  BURNHAM ROBERT D ,  STREIFER WILLIAM

    IPC: G02B6/122 ,  H01L27/15 ,  H01S5/00 ,  H01S5/042 ,  H01S5/06 ,  H01S5/062 ,  H01S5/40 ,  G02F1/015 ,  H01S3/10

    Abstract: A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherentradiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and a device associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80.ANG. can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths

    BURIED-HETEROSTRUCTURE DIODE INJECTION LASER
    8.
    发明专利
    BURIED-HETEROSTRUCTURE DIODE INJECTION LASER 未知

    公开(公告)号：CA1065460A

    公开(公告)日：1979-10-30

    申请号：CA252590

    申请日：1976-05-14

    Applicant: XEROX CORP

    Inventor： BURNHAM ROBERT D ,  SCIFRES DONALD R

    IPC: H01L33/00 ,  H01L21/208 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/24 ,  H01S3/19

    Abstract: BURIED-HETEROSTRUCTURE DIODE INJECTION LASER A buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM or TEM modes. The laser has an elongated groove in a substrate with the groove extending through a pump current confining layer with a central portion of the active layer substantially completely within the groove and substantially completely surrounded by light guiding and carrier confining layers of material having a lower index of refraction than the index of refraction of the material of the active layer. The light guiding and carrier confining layer in contact with the substrate has a central depression within the elongated groove and the central portion of the active layer is bowl-shaped and within the depression such that light waves produced by carrier recombination within the central portion of the active layer when the laser is forward biased are guided in the central portion of the active layer such that the laser produces a light beam having reduced width v. height dimensional variations such that the light beam can be used with symmetrical optical elements such as round lenses.

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