Abstract:
A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.
Abstract:
A single crystal of highly purified hexagonal boron nitride not influenced by impurities and capable of high- luminance short wave ultraviolet light emission reflecting inherent characteristics; a high-luminance ultraviolet light emitting device including the above single crystal; and utilizing the above device, a simple compact low-cost prolonged-life far ultraviolet solid laser and far ultraviolet solid light emitting unit. A single crystal of highly purified hexagonal boron nitride having a single light emission peak in the far ultraviolet region of up to 235 nm wavelength is produced by in the presence of a solvent of high purity, subjecting a raw material of boron nitride crystal to high-temperature high-pressure single crystal melting followed by crystallization. A light emitting device or light emitting layer comprised of the obtained single crystal is excited with electron beams, and the thus generated far ultraviolet radiation is resonated or without resonation is take out. ® KIPO & WIPO 2007
Abstract:
비다이아몬드 결정에서 고압 고온(HP/HT)으로 결함을 제거하거나 스트레인을 경감시키는 방법은 결함을 갖는 결정과, 압력 매질을 제공함으로써 시작한다. 단결정에서 결함의 제거 또는 스트레인의 경감 중 하나 이상을 위해 충분한 시간 동안 충분한 고압 고온의 반응 조건하에서 처리하기 위해, 상기 결정과 압력 매질을 고압 셀에 배치하여 고압 장치에 배치한다.
Abstract:
PURPOSE: A method for healing voids, micro-pipes, nano-pipes, dislocations, interstitials, vacancies, and strain defects in crystals, by a high pressure/high temperature(HP/HT) annealing process is provided. CONSTITUTION: In a method for removing one or more defects and/or relieving strain in a material selected from non-diamond crystals and amorphous materials, the method comprises (a) placing the material which contains defects and or strain in a pressure medium; (b) disposing the material and the pressure medium in a high pressure cell; and (c) processing the cell under reaction conditions in a high pressure apparatus at a sufficiently high pressure and high temperature for a sufficient amount of time for removing one or more defects or relieving strain in the material. In a method for removing one or more defects and/or relieving strain in a material selected from non-diamond crystals and amorphous materials, the method comprises (a) placing the material which contains defects and or strain in a pressure medium having at least a component in the form of a solid or a liquid at -77 deg.C; and (b) processing the material containing defects and or strain and the pressure medium in a high pressure apparatus at a sufficiently high pressure and high temperature for a sufficient amount of time for removing one or more defects or relieving strain in the material.