公开(公告)号：KR100987831B1

公开(公告)日：2010-10-13

申请号：KR1020030041418

申请日：2003-06-25

Applicant: 제너럴 일렉트릭 캄파니

Inventor： 디'에블린마크필립 ,  아서스테픈달리 ,  롤랜드래리버튼 ,  바가랄리서레쉬생카라파 ,  루섹존윌리암 ,  안소니토마스리차드 ,  레빈손리오넬몬티

IPC: B01J3/06

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0635 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/0675 ,  B01J2203/069 ,  C30B33/00 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: 비다이아몬드 결정에서 고압 고온(HP/HT)으로 결함을 제거하거나 스트레인을 경감시키는 방법은 결함을 갖는 결정과, 압력 매질을 제공함으로써 시작한다. 단결정에서 결함의 제거 또는 스트레인의 경감 중 하나 이상을 위해 충분한 시간 동안 충분한 고압 고온의 반응 조건하에서 처리하기 위해, 상기 결정과 압력 매질을 고압 셀에 배치하여 고압 장치에 배치한다.

公开(公告)号：KR1020040002684A

公开(公告)日：2004-01-07

申请号：KR1020030041418

申请日：2003-06-25

Applicant: 제너럴 일렉트릭 캄파니

Inventor： 디'에블린마크필립 ,  아서스테픈달리 ,  롤랜드래리버튼 ,  바가랄리서레쉬생카라파 ,  루섹존윌리암 ,  안소니토마스리차드 ,  레빈손리오넬몬티

IPC: B01J3/06

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0635 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/0675 ,  B01J2203/069 ,  C30B33/00 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: PURPOSE: A method for healing voids, micro-pipes, nano-pipes, dislocations, interstitials, vacancies, and strain defects in crystals, by a high pressure/high temperature(HP/HT) annealing process is provided. CONSTITUTION: In a method for removing one or more defects and/or relieving strain in a material selected from non-diamond crystals and amorphous materials, the method comprises (a) placing the material which contains defects and or strain in a pressure medium; (b) disposing the material and the pressure medium in a high pressure cell; and (c) processing the cell under reaction conditions in a high pressure apparatus at a sufficiently high pressure and high temperature for a sufficient amount of time for removing one or more defects or relieving strain in the material. In a method for removing one or more defects and/or relieving strain in a material selected from non-diamond crystals and amorphous materials, the method comprises (a) placing the material which contains defects and or strain in a pressure medium having at least a component in the form of a solid or a liquid at -77 deg.C; and (b) processing the material containing defects and or strain and the pressure medium in a high pressure apparatus at a sufficiently high pressure and high temperature for a sufficient amount of time for removing one or more defects or relieving strain in the material.

Abstract translation: 目的：提供一种通过高压/高温（HP / HT）退火工艺治疗空隙，微管，纳米管，位错，间隙，空位和应变缺陷的方法。 构成：在用于从选自非金刚石晶体和非晶材料中去除一种或多种缺陷和/或减轻应变的方法中，该方法包括（a）将含有缺陷和/或应变的材料放置在压力介质中; （b）将材料和压力介质置于高压槽中; 和（c）在高压设备的高压设备中，在足够高的压力和高温下，在反应条件下处理电池足够的时间以去除一种或多种缺陷或减轻材料中的应变。 在用于从选自非金刚石晶体和非晶材料中去除一种或多种缺陷和/或减轻应变的方法中，所述方法包括（a）将含有缺陷和/或应变的材料放置在至少具有 在-77℃下为固体或液体形式的组分; 和（b）在足够高的压力和高温下在高压设备中处理含有缺陷和/或应变的材料和压力介质足够的时间以去除一个或多个缺陷或减轻材料中的应变。