SEMICONDUCTOR FILM BOLOMETER THERMAL INFRARED DETECTOR
    64.
    发明授权
    SEMICONDUCTOR FILM BOLOMETER THERMAL INFRARED DETECTOR 失效
    随着半导体薄膜热型红外线检测辐射热测量计

    公开(公告)号:EP0526551B1

    公开(公告)日:1996-12-11

    申请号:EP91908757.7

    申请日:1991-04-24

    CPC classification number: G01J5/20 G01J2005/204

    Abstract: A thermal infrared detector comprising a dielectric pellicle (5) suspended over a cavity in a substrate (6), the pellicle supporting a detector element (1) comprising a heat sensitive semiconductor layer (3) between a pair of thin film metallic contacts (2, 4), these being deposited on the pellicle, the cavity being formed by etching and removal of the substrate material through holes or slots (8) in the surface of the substrate.

    MICROBOLOMETER DETECTORS WITH OPTICAL ABSORBER STRUCTURES FOR DETECTION OF TERAHERTZ RADIATION

    公开(公告)号:US20240288310A1

    公开(公告)日:2024-08-29

    申请号:US18689981

    申请日:2021-09-14

    Abstract: A microbolometer pixel unit for detection of terahertz radiation includes a substrate, a thermistor structure, and an optical absorber structure. The thermistor structure includes a plurality of microbolometer pixels disposed on the substrate. Each pixel includes a thermistor platform suspended above the substrate, a thermistor support member holding the thermistor platform, and a thermistor disposed on the thermistor platform and having an electrical resistance that varies in accordance with a temperature of the thermistor. The optical absorber structure includes an absorber platform suspended above the thermistor structure, an absorber support member holding the absorber platform and including a plurality of support elements, each support element providing a thermal conduction path from the absorber platform to the thermistor platform of a respective one of the microbolometer pixels, and an optical absorber disposed on the absorber platform to absorb incoming terahertz radiation to generate heat to change the temperature of the thermistors.

    Low thermal capacity micro-bolometer and associated manufacturing method

    公开(公告)号:US11988560B2

    公开(公告)日:2024-05-21

    申请号:US17611830

    申请日:2020-05-11

    Applicant: LYNRED

    CPC classification number: G01J5/024 G01J5/22 H04N5/33 G01J2005/204

    Abstract: An infrared imaging micro-bolometer integrates a membrane assembled in suspension on a substrate by support arms. The membrane includes an absorbing material configured to capture infrared radiations and a thermometric material connected to the absorbing material configured to perform a transduction of the infrared radiations captured by the absorbing material The thermometric material is arranged on a surface area smaller than 0.4 times a surface area of the membrane. The membrane also includes at least one central dielectric layer arranged between the absorbing material and the thermometric material. Recesses are formed in the absorbing material and in the at least one dielectric layer in portions of the membrane devoid of the thermometric material.

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