中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

188 records (took 0.016 seconds)

    ELECTRON BEAM SOURCE AND THE USE OF THE SAME
    69.
    发明申请
    ELECTRON BEAM SOURCE AND THE USE OF THE SAME 审中-公开

    公开(公告)号：US20190193193A1

    公开(公告)日：2019-06-27

    申请号：US16195995

    申请日：2018-11-20

    Applicant: Arcam AB

    Inventor： Mattias Fager

    IPC: B23K15/00 ,  H01J37/302 ,  H01J37/317 ,  B33Y30/00 ,  B33Y10/00 ,  B33Y50/02

    CPC classification number: B23K15/0086 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y50/02 ,  H01J1/135 ,  H01J1/16 ,  H01J3/027 ,  H01J37/3023 ,  H01J37/3178

    Abstract: Provided is an electron beam source for generating an electron beam comprising a cathode, an anode and a grid for regulating an electron beam current. The cathode has a base and a protrusion with sidewalls and a top surface. The base surface and the top surface are essentially flat. The base surface and the top surface are arranged at a predetermined distance from each other. The base is larger than the protrusion. The electron beam source further comprising a control unit adapted for changing an applied voltage to the grid for switching a spot size of the electron beam on a target surface between at least a first a first spot size corresponding to emission from the top surface of the cathode only and to a second spot size corresponding to emission from the top surface and the base surface of the cathode.

    APPARATUS AND METHODS FOR CAPACITIVELY COUPLED PLASMA VAPOR PROCESSING OF SEMICONDUCTOR WAFERS
    70.
    发明申请
    APPARATUS AND METHODS FOR CAPACITIVELY COUPLED PLASMA VAPOR PROCESSING OF SEMICONDUCTOR WAFERS 有权
    用于电容耦合等离子体蒸汽处理半导体波形的装置和方法

    公开(公告)号：US20130154479A1

    公开(公告)日：2013-06-20

    申请号：US13767526

    申请日：2013-02-14

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： Mark Kiehlbauch

    IPC: H01J1/13

    CPC classification number: H01J1/135 ,  H01J37/32091 ,  H01J37/32724 ,  H01L21/67069 ,  H01L21/67109

    Abstract: A capacitively coupled plasma reactor comprising a processing chamber, a first electrode, a second electrode and a thermoelectric unit. The processing chamber has an upper portion with a gas inlet and a lower portion, and the upper portion is in fluid communication with the lower portion. The first electrode has a front side and a backside and is positioned at the upper portion of the processing chamber. The second electrode is positioned in the lower portion of the processing chamber and is spaced apart from the front side of the first electrode. The thermoelectric unit is positioned proximate to the backside of the first electrode and is capable of heating and cooling the first electrode.

    Abstract translation: 一种电容耦合等离子体反应器，包括处理室，第一电极，第二电极和热电单元。 处理室具有上部，其具有气体入口和下部，并且上部与下部流体连通。 第一电极具有前侧和后侧，并且位于处理室的上部。 第二电极位于处理室的下部并且与第一电极的前侧间隔开。 热电单元位于第一电极的后侧附近并且能够加热和冷却第一电极。

Patent Agency Ranking