公开(公告)号：US06734099B2

公开(公告)日：2004-05-11

申请号：US10315499

申请日：2002-12-10

Applicant: Jin Zhao ,  Jiong-Ping Lu ,  Yuqing Xu

Inventor： Jin Zhao ,  Jiong-Ping Lu ,  Yuqing Xu

IPC: H01L2144

CPC classification number: H01L21/324 ,  H01L21/28518 ,  H01L29/665

Abstract: The present invention provides a system for preventing excess silicon consumption in a semiconductor wafer by depositing a metal layer (114) on top of a native oxide layer above a silicide layer (110) of the semiconductor wafer and then reducing the native oxide layer to form low resistance contacts. The native oxide layer is reduced using a rapid thermal annealing process within a temperature range to preserve the integrity of the silicide layer (110) and reduce excess silicon consumption. The temperature range can be greater than 350° C. and less than 615° C., but is optimal between 485° C. to 550° C.

Abstract translation: 本发明提供了一种用于通过在半导体晶片的硅化物层（110）上方的自然氧化物层的顶部上沉积金属层（114）并且然后还原天然氧化物层形成来防止半导体晶片中多余的硅消耗的系统 低电阻触点。 在温度范围内使用快速热退火工艺来还原天然氧化物层以保持硅化物层（110）的完整性并减少多余的硅消耗。 温度范围可以大于350℃且小于615℃，但在485℃至550℃之间是最佳的。

公开(公告)号：US06248603B1

公开(公告)日：2001-06-19

申请号：US09615393

申请日：2000-07-13

Applicant: Clive Martin Jones ,  Jin Zhao

Inventor： Clive Martin Jones ,  Jin Zhao

IPC: H01L2166

CPC classification number: G01N23/00 ,  H01L22/12

Abstract: Semiconductor structures having dielectric material layers that are below 3 nanometers in thickness can now be measured with greater precision and in less time using a SIMS device. In an example embodiment of the present invention, a method of measuring the thickness of a dielectric material layer of a semiconductor structure formed on a substrate includes directing a high energy ion beam at a portion of the substrate and sputtering off a plurality of targeted ions from the substrate. The thickness of the dielectric material layer is then determined as a function of a dosage level of the targeted ion and a density of the targeted ion in the dielectric material.

Abstract translation: 具有低于3纳米厚度的介电材料层的半导体结构现在可以使用SIMS器件以更高的精度和更少的时间来测量。 在本发明的示例性实施例中，测量形成在衬底上的半导体结构的电介质材料层的厚度的方法包括在衬底的一部分处引导高能量离子束，并溅射多个靶离子 底物。 然后确定介电材料层的厚度作为目标离子的剂量水平和介电材料中目标离子的密度的函数。

公开(公告)号：US5440026A

公开(公告)日：1995-08-08

申请号：US886633

申请日：1992-05-21

Applicant: Riaz A. Khan ,  Keith Smith ,  Andrew Pelter ,  Jin Zhao

Inventor： Riaz A. Khan ,  Keith Smith ,  Andrew Pelter ,  Jin Zhao

IPC: C07H13/04 ,  C07H13/00 ,  C07H1/00

CPC classification number: C07H13/04

Abstract: A method for the preparation of a sucrose 6-ester comprises:(i) reacting sucrose with a ketene acetal in the presence of an acid catalyst in an inert organic solvent to form a sucrose alkyl 4, 6-orthoester;(ii) subjecting the sucrose alkyl 4, 6-orthoester to mild acidic hydrolysis to provide a mixture of 4- and 6-monoesters of sucrose; and(iii) treating the mixture of sucrose monoesters with a base to convert the sucrose 4-ester into sucrose 6-ester. Sucralose may be prepared by chlorination of sucrose 6-esters prepared according to the invention.

Abstract translation: 蔗糖-6-酯的制备方法包括：（i）在酸催化剂存在下，在惰性有机溶剂中使蔗糖与乙烯酮缩醛反应，形成蔗糖烷基4,6-起始酯; （ii）使蔗糖烷基酯4,6-起始酯进行温和的酸性水解以提供蔗糖的4-和6-单酯的混合物; 和（iii）用碱处理蔗糖单酯的混合物以将蔗糖4-酯转化成蔗糖6-酯。 三氯蔗糖可以通过根据本发明制备的蔗糖6-酯的氯化来制备。